VS-85CNQ015A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 40 A
VS-85CNQ015APbF
D-61-8
VS-85CNQ015ASMPbF
D-61-8-SM
VS-85CNQ015ASLPbF
D-61-8-SL
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
Base
common
cathode
12
Anode
Anode
Anode
Common
1
cathode
12
Common
1
cathode
Base
common
cathode
1
1
2 x 40 A
15 V
1000 mA at 100 °C
3
Anode
2
3
Anode
2
3
Anode
2
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• New fully transfer-mold low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for ultra low forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 80 A
15 V
tp = 5 μs sine 5200 A
40 Apk, TJ = 75 °C (per leg) 0.32 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-85CNQ015APbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94260 For technical questions, contact: diodestech@vishay.com
Revision: 16-Apr-10 1
R
RWM
15
25
V
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VS-85CNQ015A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 40 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg C
Typical series inductance per leg L
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
I
I
RM
F(AV)
I
FSM
FM
AR
50 % duty cycle at TC = 78 °C, rectangular waveform 80
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse 850
TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ
AS
rated V
RRM
applied
Current decaying linearly to zero in 1 μs
Frequency limited by T
40 A
80 A 0.45
(1)
40 A
80 A 0.42
TJ = 100 °C
(1)
T
= 25 °C
J
T
= 100 °C 1000
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 3600 pF
T
Measured lead to lead 5 mm from package body 5.5 nH
S
R
maximum VA = 3 x VR typical
J
T
= 25 °C
J
= 75 °C
T
J
= 12 V 890
V
R
= 5 V 540
V
R
V
= Rated V
R
R
5200
2A
0.36
0.32
20
10 000 V/μs
A
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
per leg
per package DC operation 0.42
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 40 (35)
maximum 58 (50)
Marking device
www.vishay.com For technical questions, contact: diodestech@vishay.com
2 Revision: 16-Apr-10
T
, T
J
Stg
R
thJC
DC operation (see fig. 4) 0.85
- 55 to 125 °C
°C/W
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
0.30
7.8 g
0.28 oz.
kgf · cm
(lbf · in)
Case style D-61 85CNQ015A
Case style D-61-8-SM 85CNQ015ASM
Case style D-61-8-SL 85CNQ015ASL
Document Number: 94260
0.1
100
10
1000
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.1 0.2 0.3 0.4 0.5
0.70.6
0
1
TJ = 100 °C
T
J
= 75 °C
T
J
= 25 °C
1
10
100
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
5
15
10
0
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-85CNQ015A PbF Series
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 40 A
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
10 000
Vishay High Power Products
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
TJ = 25 °C
- Junction Capacitance (pF)
T
C
1000
0
510
VR - Reverse Voltage (V)
15
20
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Document Number: 94260 For technical questions, contact: diodestech@vishay.com
Revision: 16-Apr-10 3
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
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