Vishay VS-80RIA...PbF Series, VS-81RIA...PbF Series, VS-82RIA...PbF Series Data Sheet

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

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TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

Package TO-209AC (TO-94)

Diode variation Single SCR

Phase Control Thyristors

(Stud Version), 80 A

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AC (TO-94)

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

80 A

400 V, 800 V, 1200 V

1.60 V

120 mA

-40 °C to 125 °C

• AC controllers









Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 1900

60 Hz 1990

50 Hz 18

60 Hz 16

Typical 110 μs

80 A

85 °C

125

400 to 1200 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-80RIA
VS-81RIA

V

VOLTAGE

CODE

40 400 500

120 1200 1300

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= 125 °C

J

mA

1580 800 900

Revision: 11-Mar-14

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Document Number: 94392

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 180.5 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave

DC at 75 °C case temperature 125

t = 10 ms

t = 8.3 ms 1990

t = 10 ms

t = 8.3 ms 1675

t = 10 ms

t = 8.3 ms 16

t = 10 ms

t = 8.3 ms 11.7

(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

100 % V

RRM 

reapplied

< I <  x I

T(AV)

), TJ = TJ maximum 1.13

T(AV)

< I <  x I

T(AV)

), TJ = TJ maximum 1.84

T(AV)

Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 0.99

T(AV)

), TJ = TJ maximum 2.29

T(AV)

80 A

85 °C

1900

1600

18

12.7

200

400

A

kA2s

V

m

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

= 125 °C, Vd = Rated V

T

J

0.2 μF, 15 , gate pulse: 20 V, 65 , t
Per JEDEC standard RS-397, 5.2.2.6.

Gate pulse: 10 V, 15  source, tp = 6 μs, tr = 0.1 μs,
V

= Rated V

d

, ITM = 50 Adc, TJ = 25 °C

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs, VR = 50 V,
dV/dt = 20 V/μs, gate bias: 0 V 25 , t

, ITM = 2 x dI/dt snubber

DRM

= 6 μs, tr = 0.5 μs

p

= 500 μs

p

300 A/μs

1

μs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of 
off-state voltage

Maximum peak reverse and 
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= 125 °C exponential to 67 % rated V

J

TJ = 125 °C rated V

DRM/VRRM

applied 15 mA

DRM

500 V/μs

Revision: 11-Mar-14

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Document Number: 94392

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

GM

G(AV)

GM

GT

TJ = TJ maximum, tp  5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp  5 ms

GM

GM

TJ = - 40 °C

= 25 °C 120

J

T

= 125 °C 60

J

TJ = - 40 °C 3.5

GT

= 25 °C 2.5

J

T

= 125 °C 1.5

J

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied

Vishay Semiconductors

W

3A

20

10

270

V

mAT

VT

DC gate current not to trigger I

DC gate voltage not to trigger V

GD

GD

TJ = TJ maximum

Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
V

anode to cathode applied

DRM

6mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction 
temperature range

Maximum storage temperature range T
Maximum thermal resistance, 

junction to case
Maximum thermal resistance, 

case to heatsink

Mounting torque, ± 10 %

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.042 0.030

120° 0.050 0.052

90° 0.064 0.070

60° 0.095 0.100

30° 0.164 0.165

Note

• The table above shows the increment of thermal resistance R

R

R

T

J

Stg

thJC

thCS

- 40 to 125

- 40 to 150

DC operation 0.30

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Lubricated threads

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJC

15.5

(137)

14

(120)

(lbf · in)

°C

K/W

N · m

Revision: 11-Mar-14

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94392