Vishay VS-81CNQ...A PbF Series Data Sheet
VS-81CNQ...A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 40 A
VS-81CNQ...APbF
D-61-8
VS-81CNQ...ASMPbF
D-61-8-SM
VS-81CNQ...ASLPbF
D-61-8-SL
PRODUCT SUMMARY
I
F(AV)
V
R
12
Anode
1
12
Anode
1
1
Anode
1
35 V to 45 V
Base
common
cathode
Common
cathode
Common
cathode
Base
common
cathode
2 x 40 A
3
Anode
2
3
Anode
2
3
Anode
2
FEATURES
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mold low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 80 A
Range 35 to 45 V
tp = 5 μs sine 4600 A
40 Apk, TJ = 125 °C (per leg) 0.54 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-81CNQ035APbF VS-81CNQ040APbF VS-81CNQ045APbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94595 For technical questions, contact: diodestech@vishay.com
Revision: 16-Apr-10 1
R
RWM
35 40 45 V
www.vishay.com
VS-81CNQ...A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 40 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I
FSM
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
AS
AR
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward
voltage drop per leg
See fig. 1
Maximum reverse
leakage current per leg
See fig. 2
Maximum junction capacitance per leg C
Typical series inductance per leg L
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
FM
I
RM
T
S
50 % duty cycle at TC = 141 °C, rectangular waveform 80
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse 790
rated V
RRM
applied
TJ = 25 °C, IAS = 8 A, L = 1.7 mH 54 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
40 A
80 A 0.74
(1)
40 A
80 A 0.66
TJ = 25 °C
(1)
= 125 °C 45
T
J
maximum VA = 1.5 x VR typical
J
= 25 °C
T
J
T
= 125 °C
J
= Rated V
V
R
R
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 2600 pF
Measured lead to lead 5 mm from package body 5.5 nH
R
10 000 V/μs
4600
8A
0.60
0.54
5
A
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum 40 (35)
maximum 58 (50)
, T
T
J
Stg
DC operation
R
thJC
See fig. 4
DC operation 0.42
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
- 55 to 175 °C
0.85
°C/W
0.30
7.8 g
0.28 oz.
kgf · cm
(lbf · in)
81CNQ035A
Case style D-61
81CNQ040A
81CNQ045A
81CNQ035ASM
Case style D-61-8-SM
81CNQ040ASM
81CNQ045ASM
81CNQ035ASL
Case style D-61-8-SL
81CNQ040ASL
81CNQ045ASL
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94595
2 Revision: 16-Apr-10
VS-81CNQ...A PbF Series
New Generation 3 D-61 Package, 2 x 40 A
1000
100
(A)
F
10
Instantaneous Forward Current - I
1
Schottky Rectifier
T = 175°C
J
T = 125°C
J
T = 25°C
J
Vishay High Power Products
1000
100
(mA)
R
Reverse Current - I
0.01
0.001
Fig. 2 - Typical Values of Reverse Current vs.
10000
(p F)
T
Tj = 175°C
150°C
10
1
0.1
125°C
100°C
75°C
50°C
25°C
0 5 10 15 20 25 30 35 40 45
Reverse Voltage - VR (V)
Reverse Voltage (Per Leg)
T = 25°C
J
0.1
0 0.2 0.4 0.6 0.8 1
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1
D = 0.50
(°C/W)
thJC
Thermal Impedance Z
0.01
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
(Thermal Resistance)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
1000
Junction Capacitance - C
100
0 1020304050
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(Per Leg)
P
DM
t
1
t
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics (Per Leg)
thJC
2
Document Number: 94595 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 16-Apr-10 3
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