Vishay VS-80RIA...PbF Series, VS-81RIA...PbF Series, VS-82RIA...PbF Series Data Sheet

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

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TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

Package TO-209AC (TO-94)

Diode variation Single SCR

Phase Control Thyristors

(Stud Version), 80 A

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AC (TO-94)

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

80 A

400 V, 800 V, 1200 V

1.60 V

120 mA

-40 °C to 125 °C

• AC controllers









Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 1900

60 Hz 1990

50 Hz 18

60 Hz 16

Typical 110 μs

80 A

85 °C

125

400 to 1200 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-80RIA
VS-81RIA

V

VOLTAGE

CODE

40 400 500

120 1200 1300

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= 125 °C

J

mA

1580 800 900

Revision: 11-Mar-14

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VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 180.5 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave

DC at 75 °C case temperature 125

t = 10 ms

t = 8.3 ms 1990

t = 10 ms

t = 8.3 ms 1675

t = 10 ms

t = 8.3 ms 16

t = 10 ms

t = 8.3 ms 11.7

(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

100 % V

RRM 

reapplied

< I <  x I

T(AV)

), TJ = TJ maximum 1.13

T(AV)

< I <  x I

T(AV)

), TJ = TJ maximum 1.84

T(AV)

Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 0.99

T(AV)

), TJ = TJ maximum 2.29

T(AV)

80 A

85 °C

1900

1600

18

12.7

200

400

A

kA2s

V

m

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

= 125 °C, Vd = Rated V

T

J

0.2 μF, 15 , gate pulse: 20 V, 65 , t
Per JEDEC standard RS-397, 5.2.2.6.

Gate pulse: 10 V, 15  source, tp = 6 μs, tr = 0.1 μs,
V

= Rated V

d

, ITM = 50 Adc, TJ = 25 °C

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs, VR = 50 V,
dV/dt = 20 V/μs, gate bias: 0 V 25 , t

, ITM = 2 x dI/dt snubber

DRM

= 6 μs, tr = 0.5 μs

p

= 500 μs

p

300 A/μs

1

μs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of 
off-state voltage

Maximum peak reverse and 
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= 125 °C exponential to 67 % rated V

J

TJ = 125 °C rated V

DRM/VRRM

applied 15 mA

DRM

500 V/μs

Revision: 11-Mar-14

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Document Number: 94392

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

GM

G(AV)

GM

GT

TJ = TJ maximum, tp  5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp  5 ms

GM

GM

TJ = - 40 °C

= 25 °C 120

J

T

= 125 °C 60

J

TJ = - 40 °C 3.5

GT

= 25 °C 2.5

J

T

= 125 °C 1.5

J

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied

Vishay Semiconductors

W

3A

20

10

270

V

mAT

VT

DC gate current not to trigger I

DC gate voltage not to trigger V

GD

GD

TJ = TJ maximum

Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
V

anode to cathode applied

DRM

6mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction 
temperature range

Maximum storage temperature range T
Maximum thermal resistance, 

junction to case
Maximum thermal resistance, 

case to heatsink

Mounting torque, ± 10 %

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.042 0.030

120° 0.050 0.052

90° 0.064 0.070

60° 0.095 0.100

30° 0.164 0.165

Note

• The table above shows the increment of thermal resistance R

R

R

T

J

Stg

thJC

thCS

- 40 to 125

- 40 to 150

DC operation 0.30

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Lubricated threads

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJC

15.5

(137)

14

(120)

(lbf · in)

°C

K/W

N · m

Revision: 11-Mar-14

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Document Number: 94392

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

0255075100125

Maximum Allow ab le Amb ient Temperat ure (°C)

0

.

6

K

/

W

1

K

/

W

2

K

/

W

5

K

/

W

3

K

/

W

1

.

4

K

/

W

R

=

0

.

4K

/

W

­D

e

l

t

a

R

t

h

S

A

0

10

20

30

40

50

60

70

80

90

100

110

120

0

10 20 30 40 50 60 70 80

180°
120°

90°
60°
30°

RM S Li m it

Conduction Angle

Ma ximum Ave rage On-sta te Power Loss (W)

Average On-state Current (A)

80RIA Series
T = 125°C

J

www.vishay.com

Vishay Semiconductors

130

120

80RIA Series
R (DC) = 0.30 K/W

thJC

130

120

80RIA Series
R (DC) = 0.30 K/W

thJC

110

110

Cond uctio n Angle

100

90

80

Maximum Allowable Case Temperature (°C)

0 102030405060708090

30°

60°

90°

120°

Average On-state Current (A)

180°

100

90

30°

80

70

Maximum Allowable Case Temperature (°C)

020406080100120140

Average On-state Current (A)

60°

90°

Conduction Period

120°

180°

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

DC

Fig. 3 - On-State Power Loss Characteristics

180

160

140

120

100

80

60

40

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20

0

Maximum Average On-state Power Loss (W)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DC
180°
120°

90°
60°
30°

RM S Li m it

Conduction Period

80RIA Serie s
T = 125°C

0 20406080100120140

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

J

4

R

t

h

S

A

=

0

.

4

K

0

/

.

W

6

K

-

/

W

D

e

l

t

a

1

K

/

W

1

.

4

K

/

W

2

K

/

W

3

K

/

W

5

K

/

W

R

0255075100125

Maximum Allow ab le Amb ient Tempe rature (°C)

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Document Number: 94392

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

800

1000

1200

1400

1600

1800

110100

Numbe r Of Equa l Amp litude Ha lf Cyc le Current Pulses (N)

Pea k Half Sine Wave On-stat e Curren t (A)

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

80RIA Serie s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial TJ = 125°C

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

0.01 0.1 1

Pulse Tra in Du ra ti on (s)

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Peak Half Sine Wave On-state Current (A)

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

RRM

J

80RIA Series

Maximum Non Repetitive Surge Current

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

80RIA Series

Steady State Value

R = 0.30 K/W

(DC Operation)

Transient Thermal Impedance Z (K/ W)

thJC

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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

Vishay Semiconductors

1000

100

T = 25°C

J

T = 125°C

10

Instantaneous On-state Current (A)

1

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

In st a nt a n e o us O n- st a t e Vo lt a g e ( V )

J

80RIA Series

Fig. 7 - On-State Voltage Drop Characteristics

Revision: 11-Mar-14

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Fig. 8 - Thermal Impedance Z

Characteristics

thJC

5

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VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

-I

TAV

x 10 A

3

- RIA = Essential part number4

6

7

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

5

-

None = Stud base 1/2"-20UNF- 2 A threads

M = Stud base metric threads M12 x 1.75 E 6

2

-

0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

2 = Flag terminals (gate and auxiliary cathode terminals)

Device code

51 32 4 6 7

8 0 RIA 120 M PbFVS-

1 - Vishay Semiconductors product

- None = Standard production

- PbF = Lead (Pb)-free

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100

Rectangular gate pulse
a) Recommended load line for

rated di/dt : 20V, 30ohms; tr<=0.5 µs

b) Recommended load line for

<=30% rated di/dt : 20V, 65ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

ORDERING INFORMATION TABLE

VGD

0.1

0.001 0.01 0.1 1 10 100 1000

IGD

Tj=-40 °C

Tj=25 °C

Tj=125 °C

(b)

Device: 80RIA Series

Insta nta neous Gate Current (A)

(a)

Fig. 9 - Gate Characteristics

Vishay Semiconductors

(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms

(1) (2)

Frequency Limited by PG(AV)

(3)

(4)

Dimensions www.vishay.com/doc?95362

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LINKS TO RELATED DOCUMENTS

6

Document Number: 94392

, [e-mail], [e-mail]

TO-209AC (TO-94) for 80RIA Series

Fast-on terminals

C.S. 0.4 mm

2

White shrink

Red shrink

Red cathode

Red silicon rubber

Ø 4.3 (0.17)

10.0 (0.39) MAX.

(0.0006 s.i.)

Glass metal seal

Ø 8.5 (0.33)

16.5 (0.65) MAX.

Ø 23.5 (0.92) MAX.

C.S. 16 mm

2

(0.025 s.i.)

Flexible lead

2.5 (0.10) MAX.

29.5 (1.16) MAX.

1/2"-20UNF-2A

SW 27

9.5 (0.37) MIN.

White gate

AMP. 280000-1

REF-250

20 (0.79) MIN.

24 (0.94)

MAX.

21 (0.83)

MAX.

157 (6.18)

170 (6.69)

55 (2.17)

MIN.

215 ± 10

(8.46 ± 0.39)

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Document Number: 95362 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 17-Sep-10 1

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