Vishay VS-80EPS16PbF High Voltage Series Data Sheet
PRODUCT SUMMARY
TO-247AC
Anode
1
3
Base
cathode
Anode
4, 2
VF at 80 A 1.17 V
I
FSM
V
RRM
VS-80EPS16PbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 80 A
DESCRIPTION/FEATURES
The VS-80EPS16PbF rectifier High Voltage
Series has been optimized for very low forward
voltage drop, with moderate leakage. The
glass passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay
Semiconductors switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
• Compliant to RoHS Directive 2002/95/EC
1450 A
1600 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 80 A
1600 V
1450 A
80 A, TJ = 25 °C 1.17 V
- 40 to 150 °C
VOLTAGE RATINGS
, MAXIMUM
V
RRM
PART NUMBER
VS-80EPS16PbF 1600 1700 1
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 105 000 A2s
F(AV)
I
FSM
TC = 100 °C, 180° conduction half sine wave 80
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1500
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 11 250
applied 1450
RRM
applied 10 500
RRM
A
2
A
s
Document Number: 94348 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 20-Apr-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
www.vishay.com/doc?91000
VS-80EPS16PbF High Voltage Series
90
80
140
150
130
120
110
100
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
2010 30 40
80
90
50 60 70
0
30°
60°
90°
120°
180°
80EPS.. Series
R
thJC
(DC) = 0.35 K/W
Conduction angle
Ø
Vishay Semiconductors
Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
80 A, TJ = 25 °C 1.17 V
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 1.0
J
V
= Rated V
R
RRM
3.17 m
0.73 V
0.1
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) 80EPS16
T
, T
J
Stg
R
DC operation 0.35
thJC
R
40
thJA
R
Mounting surface, smooth and greased 0.2
thCS
- 40 to 150 °C
6g
0.21 oz.
kgf · cm
(lbf · in)
mA
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94348
2 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 1 - Current Rating Characteristics
This document is subject to change without notice.
150
140
130
120
110
Temperature (°C)
100
Maximum Allowable Case
90
30°
20 40
0
Average Forward Current (A)
60°
90°
80EPS.. Series
R
(DC) = 0.35 K/W
thJC
Conduction period
120°
180°
60 80 100
DC
Ø
120
140
Fig. 2 - Current Rating Characteristics
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11
www.vishay.com/doc?91000
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