Vishay VS-80EBU04 Data Sheet
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Cathode Anode
PowerTab
®
VS-80EBU04
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A FRED Pt
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
at I
V
F
F
t
(typ.) See recovery table
rr
T
max. 175 °C
J
Diode variation Single die
80 A
400 V
1.3 V
®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• Designed and qualified according to
JEDEC-JESD47
• PowerTab
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
®
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
®
package
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and
storage temperatures
T
J
F(AV)
FSM
FRM
, T
R
TC = 101 °C 80
TC = 25 °C 800
Square wave, 20 kHz 160
Stg
400 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 400 - -
r
IF = 80 A - 1.1 1.3
= 80 A, TJ = 175 °C - 0.92 1.08
I
F
T
S
F
I
= 80 A, TJ = 125 °C 0.98 1.15
F
VR = VR rated - - 50 μA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 50 - pF
Measured lead to lead 5 mm from package body - 3.5 - nH
V
Revision: 11-Dec-12
1
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93025
VS-80EBU04
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V - 50 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 151 -
J
= 80 A
I
TJ = 25 °C - 9.3 -
T
= 125 °C - 17.2 -
J
F
V
= 200 V
R
dI
/dt = 200 A/μs
F
TJ = 25 °C - 405 -
T
= 125 °C - 1300 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
Weight
Mounting torque
Marking device Case style PowerTab
- - 0.70
R
thJC
Mounting surface, flat, smooth and greased - 0.2 -
R
thCS
®
Vishay Semiconductors
-87-
- - 5.02 g
-0.18- oz.
1.2
(10)
-
2.4
(20)
80EBU04
nsT
A
nC
°C/W
N · m
(lbf · in)
Revision: 11-Dec-12
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93025
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-80EBU04
VR - Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400
25 ˚C
TJ = 175 ˚C
125 ˚C
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1000
100
TJ = 175 ˚C
= 125 ˚C
T
J
T
= 25 ˚C
J
10
Instantaneous Forward Current (A)
-
1
F
I
0 0.5 1.0 1.5 2.0 2.5
V
Forward Voltage Drop (V)
FM -
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
1000
Vishay Semiconductors
Reverse Voltage
Revision: 11-Dec-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
TJ = 25 ˚C
100
Junction Capacitance (pF)
-
T
C
10
1 10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.50
D = 0.20
D = 0.10
Thermal Impedance (°C/W)
-
Z
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
thJC
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
P
DM
t
1
t
2
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93025
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