Vishay VS-70U(R) Series Data Sheet

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Standard Recovery Diodes

DO-205AB (DO-9)

PRODUCT SUMMARY

I

F(AV)

Package DO-205AB (DO-9)

Circuit configuration Single diode

(Stud Version), 300 A

FEATURES

• Alloy diode

• Popular series for rough service

• Stud cathode and stud anode version

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Welders

300 A

• Power supplies

• Motor controls

• Battery chargers

• General industrial current rectification

VS-70U(R) Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

FSM

2

I

V

T

t

RRM

J

T

C

50 Hz 6550

60 Hz 6850

50 Hz 214

60 Hz 195

Range 100 to 600 V

300 A

150 °C

-65 to 200 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-70U(R)

, MAXIMUM REPETITIVE

V

VOLTAGE

CODE

10 100 200

20 200 300

30 300 400

40 400 500

60 600 700

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

A

kA2s

MAXIMUM

RRM

AT T

= 175 °C

J

mA

40

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VS-70U(R) Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 
at case temperature

Maximum peak, one cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 2140 kA2s

Maximum value of threshold voltage V
Maximum value of forward 

slope resistance

Maximum forward voltage drop V

I

F(AV)

I

FSM

F(TO)

r

FM

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 6850

t = 10 ms

t = 8.3 ms 5750

t = 10 ms

t = 8.3 ms 195

t = 10 ms

t = 8.3 ms 138

No voltage 
reapplied

100 % V
reapplied

RRM

No voltage 
reapplied

100 % V
reapplied

RRM

Sinusoidal half wave,
initial T

TJ = 200 °C

f

Ipk = 942 A, TJ = 25 °C 1.40 V

Vishay Semiconductors

300 A

130 °C

6550

5500

= TJ maximum

J

214

151

0.610 V

0.751 m

A

kA2s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and
storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Maximum allowed mounting torque
+0 -20 %

Approximate weight 250 g

Case style (JEDEC) see dimensions - link at the end of datasheet DO-205AB (DO-9)

Note

(1)

72U-A uses case style B-26

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.020 0.015

120° 0.024 0.025

90° 0.031 0.034

60° 0.045 0.047

30° 0.077 0.077

Note

• The table above shows the increment of thermal resistance R

, T

T

J

Stg

R

thJC

R

thCS

DC operation 0.18

Mounting surface, smooth, flat and greased 0.08

-65 to 200 °C

Not lubricated threads 37

Lubricated threads 28

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJC

K/W

Nm

(1)

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Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

120

140

160

180

200

0 50 100 150 200 250 300 350

30°

60°

90°

120°

180°

Conduction Angle

70U(R) Series
RthJC (DC) = 0.18 K/W

0

VS-70U(R) Series

Vishay Semiconductors

200

190

70U(R) Series
RthJC (DC) = 0.18 K/W

180

170

160

Conduction Period

150

140

130

120

110

Maximum Allowable Case Temperature (°C)

30°

60°

90°

120°

180°

DC

0 100 200 300 400 500

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

400

350

300

250

200

150

100

50

180°
120°

90°
60°
30°

RMS Limit

Conduction Angle

70U(R)..D Series
Tj = 200°C

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/

3 K/W

RthSA = 0.1 K/W - Delta R

W

0

0 50 100 150 200 250 300 350

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

25 50 75 100 125 150 175 200

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Forward Power Loss Characteristics

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500

450

400

350

300

250

200

150

100

50

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

70U(R) Series
Tj = 200°C

RthSA = 0.1 K/W - Delta R

0.2 K/W

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

3 K/W

0

0 100 200 300 400 50

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

25 50 75 100 125 150 175 200

0

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - Forward Power Loss Characteristics

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Peak Half Sine Wave Forward Current (A)

Number Of Equal Amplitude Half Cycle Current Pulses (N)

1500

2000

2500

3000

3500

4000

4500

5000

5500

6000

11010

0

70U(R) Series

Initial Tj = 200°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

10

100

1000

10000

0 0.5 1 1.5 2 2.5 3

70U(R) Series

Tj = 25°C

Tj = 200°C

VS-70U(R) Series

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7000

6500

6000

5500

5000

4500

4000

3500

3000

2500

2000

1500

Peak Half Sine Wave Forward Current (A)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Vishay Semiconductors

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

Initial Tj = 200°C

No Voltage Reapplied

Rated Vrrm Reapplied

70U(R) Series

0.01 0.1 1

Pulse Train Duration (s)

1

(K/W)

thJC

0.1

0.01

Transient Thermal Impedance Z

0.001

0.0001 0.001 0.01 0.1 1 10

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Fig. 7 - Forward Voltage Drop Characteristics

Steady State Value

RthJC = 0.18 K/W
(DC Operation)

Fig. 8 - Thermal Impedance Z

70U(R) Series

Square Wave Pulse Duration (s)

Characteristic

thJC

4

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ORDERING INFORMATION TABLE

VS-70U(R) Series

Vishay Semiconductors

Device code

1

2

3

4

5

6

Note: For metric device M16 x 1.5 contact factory

Dimensions www.vishay.com/doc?95340

70VS- U R 60 A

5 61 32 4

- Vishay Semiconductors product

- 70 = Standard 70U device

72 = 70U top threaded version

- U = Essential part number

- R = Stud reverse polarity (anode to stud)

None = Stud normal polarity (cathode to stud)

- Voltage code x 10 = V

- A = Essential part number

LINKS TO RELATED DOCUMENTS

(see Voltage Ratings table)

RRM

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Ø 9.50 (0.374)

MAX.

16.51 (0.65)

14.99 (0.59)

18.29 (0.72)

16.76 (0.66)

Ø 27.94 (1.10)

MAX.

9.27 (0.365)

7.87 (0.310)

31.75 (1.250) MAX.
Across flats

3/4"-16UNF-2A

3.18 (0.125)
MAX.

Ø 19.02 (0.749)

MAX.

3/8"-24UNF-2A

58.67 (2.31)

55.63 (2.19)

28.45 (1.12)
MAX.

21.03 (0.828)

20.14 (0.793)

Across flats

Outline Dimensions

Vishay Semiconductors

DO-205AB (DO-9) and B-26 for 300U(R) Series

DIMENSIONS FOR 300U(R)-A SERIES - DO-205AB (DO-9) in millimeters (inches)

149.9 (5.90)

134.6 (5.30)

53.34 (2.10)
MAX.

3.18 (0.125)
MAX.

Unthreaded

portion

11.51 (0.453)

10.74 (0.423)

21.03 (0.83)

20.14 (0.79)

19.18 (0.755)
MAX.

Ø 8.89 (0.350)
Ø 8.38 (0.330)

Ø 19.02 (0.749)

MAX.

3/4"-16UNF-2A

for metric device: M16 x 1.5

contact factory

Ø 27.94 (1.10)

MAX.

9.27 (0.365)

7.87 (0.310)

31.75 (1.250)

30.94 (1.218)

4.32 (0.170)

MAX.

13.46 (0.530)

11.94 (0.470)

Across flats

DIMENSIONS FOR 302U(R)-A SERIES - B-26 in millimeters (inches)

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Revision: 24-Jul-08 1

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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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