Datasheet VS-70CRU04PbF DataSheet (Vishay)

TO-218

VS-70CRU04PbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 35 A FRED Pt

Anode

1

PRODUCT SUMMARY

Package TO-218

I

F(AV)

V

R

V

at I

F

F

t

typ. See Recovery table

rr

T

max. 175 °C

J

Diode variation Common cathode

Base

common

cathode

2

1

2

Common

cathode

2 x 35 A

400 V

1.32 V

3

Anode

2

®

FEATURES

• Ultrafast reverse recovery

• Low forward voltage drop

• Up to 175 °C operating junction temperature

• Common-cathode diodes

• Low leakage current

• Optimized for power conversion: welding and industrial
SMPS applications

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

• Halogen-free according to IEC 61249-2-21 definition

DESCRIPTION

The VS-70CRU04PbF integrates two state of the art Vishay
Semiconductors ultrafast recovery rectifiers in the
common-cathode configuration. The planar structure of the
diodes, and the platinum doping life-time control, provide a
ultrasoft recovery current shape, together with the best
overall performance, ruggedness and reliability
characteristics. These devices are thus intended for high
frequency applications in which the switching energy is
designed not to be predominant portion of the total energy,
such as in the output rectification stage of welding
machines, SMPS, DC/DC converters. Their extremely
optimized stored charge and low recovery current reduce
both over-dissipation in the switching elements (and
snubbers) and EMI/RFI.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

Operating junction and storage temperatures T

J

F(AV)

FSM

, T

R

TC = 116 °C 35

TC = 25 °C 300

D

Stg

TC = 100 °C 47 W

400 V

A

- 55 to 175 °C

ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage, blocking voltage V

Forward voltage V

Reverse leakage current I

Junction capacitance C

Document Number: 94510 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-11 [e-mail]

BR

, V

F

R

T

IR = 100 μA 400 - -

R

IF = 35 A - 1.11 1.32

I

= 35 A, TJ = 125 °C - 0.98 1.14

F

I

= 35 A, TJ = 175 °C - 0.92 1.05

F

VR = VR rated - - 100 μA

= 150 °C, VR = VR rated - - 2 mA

T

J

VR = 400 V - 70 - pF

, [e-mail], [e-mail] 1

V

VS-70CRU04PbF

Vishay Semiconductors

Ultrafast Rectifier, 2 x 35 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time t

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

RRM

IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V - 32 38

rr

TJ = 25 °C

rr

T

= 125 °C - 130 -

J

TJ = 25 °C - 7.7 -

T

= 125 °C - 16.5 -

J

TJ = 25 °C - 0.28 -

rr

T

= 125 °C - 1.08 -

J

= 35 A

I

F

V

= 200 V

R

dI

/dt = 200 A/μs

F

-72-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Thermal resistance,
junction to case

Thermal resistance, case to heatsink R

Weight

Mounting torque 1.2 (10) - 2.4 (20)

Marking device Case style TO-218 70CRU04

per diode

R

thJC

thCS

Mounting surface, flat, smooth and greased - 0.2 -

-0.81.6

-4-g

-0.13- oz.

(lbf in)

ns

A

μC

K/Wboth diodes - 0.4 0.8

Nm

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2 [e-mail]

, [e-mail], [e-mail] Revision: 09-Feb-11

I

R

- Reverse Current (µA)

VR - Reverse Voltage (V)

50 100 150 200 350300250 400

0.001

0.01

0.1

1

10

100

1000

TJ = 175 °C

25 °C

150 °C

125 °C

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

Single pulse

(thermal resistance)

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

VS-70CRU04PbF

Ultrafast Rectifier, 2 x 35 A FRED Pt

1000

100

TJ = 175 °C

= 125 °C

T

J

= 25 °C

T

10

1

- Instantaneous Forward Current (A)

F

I

0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

(Per Diode)

J

1000

TJ = 25 °C

®

Vishay Semiconductors

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

100

- Junction Capacitance (pF)

T

C

10

1101001000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Revision: 09-Feb-11 [e-mail]

Fig. 4 - Maximum Thermal Impedance Z

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Characteristics (Per Diode)

thJC

VS-70CRU04PbF

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

20151053025 35

40

0

140

160

170

180

100

120

130

150

110

Square wave (D = 0.50)
Rated V

R

applied

See note (1)

DC

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

20 25 3015105

35

0

40

0

20

30

10

35

15

25

5

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC

RMS limit

t

rr

(ns)

dIF/dt (A/µs)

100 1000

50

150

80

100

120

130

140

70

60

90

110

IF = 35 A
V

RR

= 200 V

TJ = 25 °C

TJ = 125 °C

Q

rr

(nC)

dIF/dt (A/µs)

100 1000

0

2500

1000

1500

2000

500

IF = 35 A
V

RR

= 200 V

TJ = 25 °C

TJ = 125 °C

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Ultrafast Rectifier, 2 x 35 A FRED Pt

Fig. 7 - Typical Reverse Recovery Time vs. dI

®

/dt

F

Fig. 6 - Forward Power Loss Characteristics

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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F(AV)

) x R

REV

x VFM at (I

;

thJC

/D) (see fig. 6);

F(AV)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

, [e-mail], [e-mail] Revision: 09-Feb-11

VS-70CRU04PbF

Ultrafast Rectifier, 2 x 35 A FRED Pt

®

Vishay Semiconductors

ORDERING INFORMATION TABLE

Device code

Dimensions www.vishay.com/doc?95214

Part marking information www.vishay.com/doc?95219

VS- 70 C R U 04 PbF

51 32 4 6 7

1 - Vishay Semiconductors product

2 - Current rating (70 = 70 A)

3 - Common cathode

4 -TO-218

5 - Ultrafast recovery

6 - Voltage rating (04 = 400 V)

7 - PbF = Lead (Pb)-free

Tube standard pack quantity: 30 pieces

LINKS TO RELATED DOCUMENTS

Document Number: 94510 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-11 [e-mail]

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DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

FRED PtTM TO-218

Ø 0.159 ± 0.002

(Ø 4.04 ± 0.05)

0.3066 ± 0.003
(7.79 ± 0.08)

0.4800 ± 0.005

(12.19 ± 0.13)

0.6025 ± 0.005

(15.30 ± 0.13)

0.588 ± 0.005

(14.94 ± 0.13)

123

0.2165 BSC

45.0°

5.0° (2 places)

3.0° (3 places)

Ø 0.118 x 0.01

(Ø 3.00 x 0.254)

+ 0.006

0.0430

- 0.000

+ 0.15

(1.09 )

- 0.00

0.1890 ± 0.005
(4.80 ± 0.13)

DP.

0.050 ± 0.003
(1.27 ± 0.08)

0.0980 ± 0.002
(2.49 ± 0.05)

+ 0.006

0.0197

- 0.000

+ 0.15

(0.50 )

- 0.00

Document Number: 95214 For technical questions concerning discrete products, contact: [e-mail]
Revision: 21-Apr-08 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

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Revision: 11-Mar-11 1