Vishay VS-70CRU02PbF Data Sheet
TO-218
VS-70CRU02PbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 35 A FRED Pt
Anode
1
PRODUCT SUMMARY
Package TO-218
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
Base
common
cathode
2
1
2
Common
cathode
2 x 35 A
200 V
1.09 V
3
Anode
2
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Up to 175 °C operating junction temperature
• Common-cathode diodes
• Low leakage current
• Optimized for power conversion: welding and industrial
SMPS applications
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION
The VS-70CRU02PbF integrates two state of the art Vishay
Semiconductors ultrafast recovery rectifiers in the
common-cathode configuration. The planar structure of the
diodes, and the platinum doping life-time control, provide a
ultrasoft recovery current shape, together with the best
overall performance, ruggedness and reliability
characteristics. These devices are thus intended for high
frequency applications in which the switching energy is
designed not to be predominant portion of the total energy,
such as in the output rectification stage of welding
machines, SMPS, DC/DC converters. Their extremely
optimized stored charge and low recovery current reduce
both over-dissipation in the switching elements (and
snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous forward current per diode I
Cathode to anode voltage V
Single pulse forward current per diode I
Maximum power dissipation per module P
Operating junction and storage temperatures T
J
F(AV)
FSM
, T
R
D
Stg
TC = 145 °C 35 A
200 V
TC = 25 °C 300 A
TC = 100 °C 67 W
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94509 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-11 DiodesAmericas@vishay.com
BR
, V
F
R
T
S
IR = 60 μA 200 - -
R
IF = 35 A - 0.95 1.09
I
= 35 A, TJ = 125 °C - 0.9 1.0
F
I
= 35 A, TJ = 175 °C - 0.85 0.9
F
VR = VR rated - - 60 μA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 50 - pF
Measured from A-lead to K-lead 5 mm
from package body
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
-10-nH
V
VS-70CRU02PbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 35 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
I
= 1 A
F
V
= 30 V
R
/dt = 200 A/μs
dI
F
= 35 A
I
F
V
= 100 V
R
dI
/dt = 200 A/μs
F
--28
-26-
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
TJ = 25 °C
= 125 °C - 34 -
T
J
= 25 °C
T
J
= 125 °C - 49 -
T
J
TJ = 25 °C - 3.7 -
T
= 125 °C - 8.2 -
J
TJ = 25 °C - 48.7 -
rr
T
= 125 °C - 202 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
per diode
both legs - - 0.45
R
thJC
R
thCS
Mounting surface, flat, smooth and greased - 0.2 -
Weight
Mounting torque
Marking device Case style TO-218 70CRU02
-0.80.9
-5.5- g
-0.2-oz.
1.2
(10)
2.4
(20)
(lbf in)
ns
A
μC
K/W
Nm
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94509
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 09-Feb-11
I
R
- Reverse Current (mA)
VR - Reverse Voltage (V)
0 50 100 150 200
0.01
0.1
1
10
100
1000
25 °C
TJ = 175 °C
125 °C
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-70CRU02PbF
Ultrafast Rectifier, 2 x 35 A FRED Pt
1000
100
10
1
- Instantaneous Forward Current (A)
F
I
0 0.8 1.6 2.4 3.20.4 1.2 2.0 2.8 3.6 4.0
Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
TJ = 175 °C
= 125 °C
T
J
= 25 °C
T
J
(Per Diode)
1000
TJ = 25 °C
®
Vishay Semiconductors
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
- Junction Capacitance (pF)
T
C
10
1101001000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94509 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Feb-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
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Characteristics (Per Diode)
thJC
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