Vishay VS-6CWQ06FNPbF Data Sheet
D-PAK (TO-252AA)
Schottky Rectifier, 2 x 3.5 A
VS-6CWQ06FNPbF
Vishay Semiconductors
Base
common
cathode
4
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
2
Common
cathode
13
Anode Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 150 °C
J
Diode variation Common cathode
E
AS
See Electrical table
30 mA at 125 °C
2 x 3.5 A
60 V
6 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-6CWQ06FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 7 A
60 V
tp = 5 μs sine 490 A
3 Apk, TJ = 25 °C (per leg) 0.61 V
Range - 40 to 150 °C
Document Number: 94249 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
VOLTAGE RATINGS
PARAMETER SYMBOL VS-6CWQ06FNPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 7
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 70
TJ = 25 °C, IAS = 1 A, L = 12 mH 6 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
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maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
3.5
A
490
1A
VS-6CWQ06FNPbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 2 x 3.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward
voltage drop per leg
See fig. 1
V
FM
6 A 0.76
(1)
3 A
6 A 0.65
Maximum reverse
leakage current per leg
I
RM
See fig. 2
Threshold voltage V
Forward slope resistance r
Typical junction capacitance per leg C
Typical series inductance per leg L
F(TO)
t
T
S
TJ = 25 °C
(1)
T
J
TJ = TJ maximum
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 145 pF
Measured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
T
= 25 °C
J
= 125 °C
T
J
= Rated V
V
= 125 °C 30
R
R
R
0.61
0.53
2
0.38 V
34.31 m
10 000 V/μs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
per leg
per device 2.35
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA) 6CWQ06FN
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
R
thJC
DC operation
See fig. 4
- 40 to 150 °C
4.70
0.3 g
0.01 oz.
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94249
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
1.0
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-6CWQ06FNPbF
100
10
- Instantaneous
F
I
Forward Current (A)
1.0
0.4 0.8 1.2 1.6 2.0 2.4 2.80
V
TJ = 150 °C
T
= 125 °C
J
= 25 °C
T
J
- Forward Voltage Drop (V)
FM
Schottky Rectifier, 2 x 3.5 A
100
TJ = 150 °C
10
T
T
1.0
T
0.1
T
- Reverse Current (mA)
0.01
R
I
0.001
T
0
= 125 °C
J
= 100 °C
J
= 75 °C
J
= 50 °C
J
= 25 °C
J
Vishay Semiconductors
10 20 50
V
R
30 40
- Reverse Voltage (V)
60
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
100
- Junction Capacitance (pF)
T
C
10
V
TJ = 25 °C
2010 30 40 50 600
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
Document Number: 94249 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics (Per Leg)
thJC
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