Vishay VS-6CWH02FNPbF Data Sheet
D-PAK (TO-252AA)
VS-6CWH02FNPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
Anode Anode
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
Base
common
cathode
4
2
Common
cathode
13
2 x 3 A
200 V
1.0 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current per device I
Peak repetitive forward current per diode I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
FM
Total device, rated VR, TC = 159 °C 6
Rated VR , square wave, 20 kHz, TC = 159 °C 6
Stg
200 V
50
- 65 to 175 °C
ANon-repetitive peak surge current I
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
F
R
T
S
IR = 100 μA 200 - -
IF = 3 A - - 1
I
= 3 A, TJ = 125 °C - - 0.9
F
= 6 A - - 1.2
I
F
I
= 6 A, TJ = 125 °C - - 1.08
F
VR = VR rated - - 5
T
= 125 °C, VR = VR rated - - 100
J
VR = 200 V - 12 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
μA
V
Document Number: 94550 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-6CWH02FNPbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 26 -
J
TJ = 25 °C - 3.1 -
T
= 125 °C - 4.6 -
J
= 3 A
I
F
V
= 160 V
R
dI
/dt = 200 A/μs
F
-19-
TJ = 25 °C - 30 -
T
= 125 °C - 60 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style D-PAK 6CWH02FN
, T
T
J
Stg
R
thJC
R
thJA
R
thCS
- 65 - 175 °C
--5
--80
°C/W
---
-0.3-g
-0.01-oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94550
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-Jan-11
VS-6CWH02FNPbF
100
(A)
10
F
Tj = 175°C
1
Instantaneous Forward Current - I
Ultrafast Rectifier, 2 x 3 A FRED Pt
(μA)
Reverse Current - I
Tj = 125°C
(pF)
®
Vishay Semiconductors
100
T = 175˚C
J
10
R
1
0.1
0.01
0.001
Fig. 2 - Typical Values of Reverse Current vs.
100
T
150˚C
125˚C
100˚C
25˚C
050100150200
Reverse Voltage - VR (V)
Reverse Voltage
T = 25˚C
J
Tj = 25°C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
D = 0.5
(°C/W)
thJC
Thermal Impedance Z
D = 0.2
D = 0.1
1
D = 0.05
D = 0.02
D = 0.01
0.1
0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Fig. 4 - Maximum Thermal Impedance Z
Single Pulse
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Junction Capacitance - C
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Characteristics
thJC
Reverse Voltage
Document Number: 94550 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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