Vishay VS-60EPU06PbF, VS-60APU06PbF Data Sheet

VS-60EPU06PbF, VS-60APU06PbF

Vishay Semiconductors

Ultrafast Soft Recovery Diode, 60 A FRED Pt®

TO-247AC modified

Cathode
to base
	2
1	3
Cathode	Anode

VS-60EPU06PbF

TO-247AC

Cathode

to base

2

1	3
Anode	Anode

VS-60APU06PbF

PRODUCT SUMMARY

	Package	TO-247AC,
		TO-247AC modified (2 pins)
	IF(AV)	60 A
	VR	600 V
	VF at IF	1.68 V
	trr typ.	See Recovery table
	TJ max.	175 °C
	Diode variation	Single die

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

•Compliant to RoHS Directive 2002/95/EC

•Designed and qualified for industrial level

BENEFITS

•Reduced RFI and EMI

•Higher frequency operation

•Reduced snubbing

•Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.

The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Cathode to anode voltage

VR

600

V

Continuous forward current

IF(AV)

TC = 116 °C

60

Single pulse forward current

IFSM

TC = 25 °C

600

A

Maximum repetitive forward current

IFRM

Square wave, 20 kHz

120

Operating junction and storage temperatures

TJ, TStg

- 55 to 175

°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

VBR,

IR

= 100 μA

600

-

-

blocking voltage

VR

IF = 60 A

-

1.35

1.68

V

Forward voltage

VF

IF = 60 A, TJ = 125 °C

-

1.20

1.42

IF = 60 A, TJ = 175 °C

-

1.11

1.30

Reverse leakage current

IR

VR = VR rated

-

-

50

μA

TJ

= 150 °C, VR = VR rated

-

-

500

Junction capacitance

CT

VR = 600 V

-

39

-

pF

Document Number: 94023

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 14-Feb-11

[e-mail], [e-mail], [e-mail]

1

VS-60EPU06PbF, VS-60APU06PbF

Vishay Semiconductors Ultrafast Soft Recovery Diode,

60 A FRED Pt®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNITS
			IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V		-	34	45
	Reverse recovery time	trr	TJ = 25 °C		-	81	-	ns
			TJ = 125 °C		-	164	-
				IF = 60 A
			TJ = 25 °C		-	7.4	-
	Peak recovery current	IRRM		dIF/dt = 200 A/μs				A
			TJ = 125 °C		-	17.0	-
				VR = 200 V
	Reverse recovery charge	Qrr	TJ = 25 °C		-	300	-	nC
			TJ = 125 °C		-	1394	-

THERMAL - MECHANICAL SPECIFICATIONS

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Thermal resistance,	RthJC		-	-	0.63
	junction to case
							K/W
	Thermal resistance,	RthCS	Mounting surface, flat, smooth	-	0.2	-
	case to heatsink		and greased
	Weight			-	5.5	-	g
				-	0.2	-	oz.
	Mounting torque			1.2	-	2.4	N	m
				(10)		(20)	(lbf	in)
	Marking device		Case style TO-247AC modified		60EPU06
			Case style TO-247AC		60APU06

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94023
2	[e-mail], [e-mail], [e-mail]	Revision: 14-Feb-11

VS-60EPU06PbF, VS-60APU06PbF

Ultrafast Soft Recovery Diode,

Vishay Semiconductors

60 A FRED Pt®

	1000							1000
							<![if ! IE]> <![endif]>ReverseCurrent (µA)	100		TJ	= 175 °C
<![if ! IE]> <![endif]>Instantaneous-
	10							0.1
<![if ! IE]> <![endif]>I	<![if ! IE]> <![endif]>CurrentForward(A)							10
	100										TJ = 125 °C
					TJ = 175 °C			1
					TJ = 125 °C
<![if ! IE]> <![endif]>F					TJ = 25 °C								TJ = 25 °C
							<![if ! IE]> <![endif]>R	0.01
							<![if ! IE]> <![endif]>I
	1							0.001	100
	0	0.5	1.0	1.5	2.0	2.5	3.0	0		200	300	400	500	600

VF - Forward Voltage Drop (V)	VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics	Fig. 2 - Typical Values of Reverse Current vs.
	Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

100	TJ = 25 °C

10

0

100

200

300

400

500

600

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]>

<![endif]>ZthJC - Thermal Impedance (°C/W)

1
	0.7
	0.5
	0.3					Ri (°C/W)	τi (s)
0.1						0.06226	0.00049
						0.32503	0.01294
	0.1		R1	R2	R3	0.24271	0.24310
	0.05		TJ		TC	Notes:
			τ1	τ2	τ3
						1. Duty factor D = ton/period
			Ci = τi/Ri			2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001	0.0001	0.001	0.01	0.1	1	10	100

ton - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94023	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 14-Feb-11	[e-mail], [e-mail], [e-mail]	3