VS-60EPU06PbF, VS-60APU06PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
TO-247AC modified
Cathode |
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to base |
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2 |
1 |
3 |
Cathode |
Anode |
VS-60EPU06PbF
TO-247AC
Cathode
to base
2 |
1 |
3 |
Anode |
Anode |
VS-60APU06PbF
PRODUCT SUMMARY
Package |
TO-247AC, |
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TO-247AC modified (2 pins) |
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IF(AV) |
60 A |
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VR |
600 V |
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VF at IF |
1.68 V |
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trr typ. |
See Recovery table |
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TJ max. |
175 °C |
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Diode variation |
Single die |
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FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
•Compliant to RoHS Directive 2002/95/EC
•Designed and qualified for industrial level
BENEFITS
•Reduced RFI and EMI
•Higher frequency operation
•Reduced snubbing
•Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
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SYMBOL |
TEST CONDITIONS |
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MAX. |
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UNITS |
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Cathode to anode voltage |
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VR |
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600 |
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V |
Continuous forward current |
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IF(AV) |
TC = 116 °C |
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60 |
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Single pulse forward current |
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IFSM |
TC = 25 °C |
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600 |
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A |
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Maximum repetitive forward current |
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IFRM |
Square wave, 20 kHz |
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120 |
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Operating junction and storage temperatures |
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TJ, TStg |
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- 55 to 175 |
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°C |
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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MIN. |
TYP. |
MAX. |
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UNITS |
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Breakdown voltage, |
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VBR, |
IR |
= 100 μA |
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600 |
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blocking voltage |
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VR |
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IF = 60 A |
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- |
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1.35 |
1.68 |
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V |
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Forward voltage |
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VF |
IF = 60 A, TJ = 125 °C |
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1.20 |
1.42 |
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IF = 60 A, TJ = 175 °C |
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1.11 |
1.30 |
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Reverse leakage current |
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IR |
VR = VR rated |
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- |
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50 |
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μA |
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TJ |
= 150 °C, VR = VR rated |
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500 |
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Junction capacitance |
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CT |
VR = 600 V |
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39 |
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pF |
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Document Number: 94023 |
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For technical questions within your region, please contact one of the following: |
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www.vishay.com |
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Revision: 14-Feb-11 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
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1 |
VS-60EPU06PbF, VS-60APU06PbF
Vishay Semiconductors Ultrafast Soft Recovery Diode,
60 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNITS |
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IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V |
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34 |
45 |
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Reverse recovery time |
trr |
TJ = 25 °C |
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81 |
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ns |
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TJ = 125 °C |
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164 |
- |
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IF = 60 A |
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TJ = 25 °C |
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7.4 |
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Peak recovery current |
IRRM |
dIF/dt = 200 A/μs |
A |
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TJ = 125 °C |
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17.0 |
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VR = 200 V |
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Reverse recovery charge |
Qrr |
TJ = 25 °C |
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300 |
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nC |
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TJ = 125 °C |
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1394 |
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNITS |
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Thermal resistance, |
RthJC |
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0.63 |
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junction to case |
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K/W |
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Thermal resistance, |
RthCS |
Mounting surface, flat, smooth |
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0.2 |
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case to heatsink |
and greased |
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Weight |
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5.5 |
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g |
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0.2 |
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oz. |
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Mounting torque |
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1.2 |
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2.4 |
N |
m |
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(10) |
(20) |
(lbf |
in) |
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Marking device |
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Case style TO-247AC modified |
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60EPU06 |
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Case style TO-247AC |
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60APU06 |
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www.vishay.com |
For technical questions within your region, please contact one of the following: |
Document Number: 94023 |
2 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
Revision: 14-Feb-11 |
VS-60EPU06PbF, VS-60APU06PbF
Ultrafast Soft Recovery Diode, |
Vishay Semiconductors |
60 A FRED Pt®
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1000 |
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1000 |
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<![if ! IE]> <![endif]>ReverseCurrent (µA) |
100 |
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TJ |
= 175 °C |
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<![if ! IE]> <![endif]>Instantaneous- |
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10 |
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0.1 |
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<![if ! IE]> <![endif]>I |
<![if ! IE]> <![endif]>CurrentForward(A) |
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10 |
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100 |
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TJ = 125 °C |
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TJ = 175 °C |
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1 |
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TJ = 125 °C |
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<![if ! IE]> <![endif]>F |
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TJ = 25 °C |
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TJ = 25 °C |
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<![if ! IE]> <![endif]>R |
0.01 |
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<![if ! IE]> <![endif]>I |
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1 |
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0.001 |
100 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
0 |
200 |
300 |
400 |
500 |
600 |
VF - Forward Voltage Drop (V) |
VR - Reverse Voltage (V) |
Fig. 1 - Typical Forward Voltage Drop Characteristics |
Fig. 2 - Typical Values of Reverse Current vs. |
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Reverse Voltage |
<![endif]>CT - Junction Capacitance (pF)
1000
100 |
TJ = 25 °C |
10
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100 |
200 |
300 |
400 |
500 |
600 |
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
<![endif]>ZthJC - Thermal Impedance (°C/W)
1 |
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0.7 |
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0.5 |
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0.3 |
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Ri (°C/W) |
τi (s) |
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0.1 |
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0.06226 |
0.00049 |
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0.32503 |
0.01294 |
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0.1 |
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R1 |
R2 |
R3 |
0.24271 |
0.24310 |
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0.05 |
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TJ |
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TC |
Notes: |
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τ1 |
τ2 |
τ3 |
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1. Duty factor D = ton/period |
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Ci = τi/Ri |
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2. Peak TJ = PDM x ZthJC + TC |
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0.01 |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
10 |
100 |
ton - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94023 |
For technical questions within your region, please contact one of the following: |
www.vishay.com |
Revision: 14-Feb-11 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
3 |