Vishay VS-60EPU04PbF, VS-60APU04PbF Data Sheet
TO-247AC modified
TO-247AC
Cathode
to base
2
1
3
Cathode
Anode
VS-60EPU04PbF
Cathode
to base
2
Anode Anode
VS-60APU04PbF
1
3
VS-60EPU04PbF, VS-60APU04PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
at I
F
F
typ. See Recovery table
t
rr
T
max. 175 °C
J
Diode variation Single die
TO-247AC modified (2 pins)
TO-247AC,
60 A
400 V
1.25 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94022 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
R
F(AV)
FSM
FRM
, T
J
Stg
,
V
BR
V
R
S
IR = 100 μA 400 - -
R
IF = 60 A - 1.05 1.25
I
F
T
= 60 A, TJ = 175 °C - 0.87 1.03
F
= 60 A, TJ = 125 °C - 0.93 1.10
I
F
VR = VR rated - - 50 μA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 400 V - 50 - pF
Measured lead to lead 5 mm from package body - 3.5 - nH
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 127 °C 60
TC = 25 °C 600
Square wave, 20 kHz 120
400 V
ASingle pulse forward current I
- 55 to 175 °C
V
VS-60EPU04PbF, VS-60APU04PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V - 50 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 145 -
J
TJ = 25 °C - 8.8 -
T
= 125 °C - 15.4 -
J
rr
TJ = 25 °C - 375 -
T
= 125 °C - 1120 -
J
= 60 A
I
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
-85-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
R
--0.70
thJC
R
thCS
Mounting surface, flat, smooth
and greased
-0.2-
-5.5- g
-0.2-oz.
1.2
(10)
-
2.4
(20)
(lbf · in)
nsT
A
nC
K/W
N · m
Marking device
Case style TO-247AC modified 60EPU04
Case style TO-247AC 60APU04
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94022
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-Feb-11
1
10
1000
0 2.51.5
1
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
0.5 2
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
100
1000
0 100 1000
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-60EPU04PbF, VS-60APU04PbF
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
1000
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0 200
Vishay Semiconductors
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
100
400300
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94022 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
thJC
Characteristics
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