Vishay VS-60EPU02PbF, VS-60APU02PbF Data Sheet
TO-247AC modified
TO-247AC
2
1
3
Cathode
Anode
Base
common
cathode
2
Anode
1
Anode
3
Base
common
cathode
VS-60EPU02PbF VS-60APU02PbF
VS-60EPU02PbF, VS-60APU02PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
PRODUCT SUMMARY
Package
I
F(AV)
V
R
at I
V
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Single die
TO-247AC modified (2 pins)
TO-247AC,
60 A
200 V
1.08 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Output rectification
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94021 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
R
F(AV)
FSM
FRM
, T
J
Stg
V
,
BR
V
R
S
IR = 100 μA 200 - -
R
IF = 60 A - 0.98 1.08
F
T
= 60 A, TJ = 175 °C - 0.81 0.88
I
F
VR = VR rated - - 50 μA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 87 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 127 °C 60
TC = 25 °C 800
Square wave, 20 kHz 120
200 V
ASingle pulse forward current I
- 55 to 175 °C
V
VS-60EPU02PbF, VS-60APU02PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 50 -
J
TJ = 25 °C - 4 -
T
= 125 °C - 8 -
J
rr
TJ = 25 °C - 59 -
T
= 125 °C - 220 -
J
= 60 A
I
F
dI
/dt = 200 A/μs
F
= 160 V
V
R
-28-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque --1.2N m
Marking device
R
- - 0.70
thJC
R
thCS
Mounting surface, flat, smooth
and greased
Case style TO-247AC modified 60EPU02
Case style TO-247AC 60APU02
-0.2-
-5.5- g
-0.2-oz.
nsT
A
nC
K/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94021
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-Feb-11
1
10
1000
0 2.51.5
1
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
0.5 2
TJ = 175 °C
T
J
= 150 °C
T
J
= 25 °C
VS-60EPU02PbF, VS-60APU02PbF
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
1000
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0 100
Vishay Semiconductors
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
50
200150
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
1000
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
0 100 1000
10
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.50
D = 0.20
D = 0.10
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10
Document Number: 94021 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Feb-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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