Vishay VS-5.MT...KPbF Series, VS-9.MT...KPbF Series, VS-11.MT...KPbF Series Data Sheet

VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series

www.vishay.com	Vishay Semiconductors

Three Phase Controlled Bridge (Power Modules), 55 A to 110 A

MT-K

PRODUCT SUMMARY

IO	55 A to 110 A
VRRM	800 V to 1600 V
Package	MT-K
Circuit	Three phase bridge

FEATURES

• Package fully compatible with the industry standard INT-A-PAK power modules series

•High thermal conductivity package, electrically insulated case

•Excellent power volume ratio

•4000 VRMS isolating voltage

•UL E78996 approved

•Designed and qualified for industrial level

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL		CHARACTERISTICS		VALUES				VALUES		VALUES		UNITS
				5.MT...K				9.MT...K		11.MT...K
IO					55			90		110		A
		TC			85			85		85		°C
IFSM		50 Hz			390			950		1130		A
		60 Hz			410			1000		1180
I2t		50 Hz			770			4525		6380		A2s
		60 Hz			700			4130		5830
I2 t					7700			45 250		63 800		A2 s
VRRM		Range						800 to 1600				V
TStg		Range						-40 to 125				°C
TJ		Range						-40 to 125				°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
			VRRM, MAXIMUM				VRSM, MAXIMUM		VDRM, MAXIMUM			IRRM/IDRM,
TYPE	VOLTAGE								REPETITIVE PEAK
			REPETITIVE PEAK			NON-REPETITIVE PEAK			OFF-STATE VOLTAGE,			MAXIMUM
NUMBER		CODE	REVERSE VOLTAGE			REVERSE VOLTAGE						AT TJ = 125 °C
									GATE OPEN CIRCUIT
			V					V		V		mA
	80		800				900		800
	100		1000				1100		1000
VS-5.MT...K	120		1200				1300		1200			10
	140		1400				1500		1400
	160		1600				1700		1600
	80		800				900		800
VS-9.MT...K	100		1000				1100		1000
	120		1200				1300		1200			20
VS-11.MT...K
	140		1400				1500		1400
	160		1600				1700		1600
Revision: 27-Feb-14							1			Document Number: 94353

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series

www.vishay.com

Vishay Semiconductors

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

VALUES

VALUES

UNITS

5.MT...K

9.MT...K

11.MT...K

Maximum DC output current at

IO

120° rect. conduction angle

55

90

110

A

case temperature

85

85

85

°C

Maximum peak, one-cycle

t = 10 ms

No voltage

390

950

1130

t = 8.3 ms

reapplied

410

1000

1180

forward, non-repetitive on state

ITSM

A

t = 10 ms

100 % VRRM

330

800

950

surge current

t = 8.3 ms

reapplied

Initial TJ = TJ max.

345

840

1000

t = 10 ms

No voltage

770

4525

6380

Maximum I2t for fusing

I2t

t = 8.3 ms

reapplied

700

4130

5830

A2s

t = 10 ms

100 % VRRM

540

3200

4510

t = 8.3 ms

reapplied

500

2920

4120

Maximum I2 t for fusing

I2 t

t = 0.1 ms to 10 ms, no voltage reapplied

7700

45 250

63 800

A2 s

Low level value of threshold

VT(TO)1

(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum

1.17

1.09

1.04

voltage

V

High level value of threshold

VT(TO)2

(I > x IT(AV)), TJ maximum

1.45

1.27

1.27

voltage

Low level value on-state slope

rt1

(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum

12.40

4.10

3.93

resistance

m

High level value on-state slope

rt2

(I > x IT(AV)), TJ maximum

11.04

3.59

3.37

resistance

Maximum on-state voltage drop

VTM

Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction

2.68

1.65

1.57

V

Maximum non-repetitve

dI/dt

TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),

150

A/μs

rate of rise of turned on current

Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

Maximum holding current

IH

TJ = 25 °C, anode supply = 6 V, resistive load,

200

gate open circuit

mA

Maximum latching current

IL

TJ = 25 °C, anode supply = 6 V, resistive load

400

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

5.MT...K

9.MT...K

11.MT...K

UNITS

RMS isolation voltage

VISOL

TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s

4000

V

Maximum critical rate of rise of

dV/dt (1)

TJ = TJ maximum, linear to 0.67 VDRM,

500

V/μs

off-state voltage

gate open circuit

Note

(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

5.MT...K

9.MT...K

11.MT...K

UNITS

Maximum peak gate power

PGM

10

W

Maximum average gate power

PG(AV)

2.5

Maximum peak gate current

IGM

TJ = TJ maximum

2.5

A

Maximum peak negative

- VGT

10

gate voltage

Maximum required DC gate

TJ = - 40 °C

4.0

V

VGT

TJ = 25 °C

2.5

voltage to trigger

TJ = 125 °C

Anode supply = 6 V,

1.7

Maximum required DC gate

TJ = - 40 °C

resistive load

270

IGT

TJ = 25 °C

150

mA

current to trigger

TJ = 125 °C

80

Maximum gate voltage

VGD

0.25

V

that will not trigger

TJ = TJ maximum, rated VDRM applied

Maximum gate current

IGD

6

mA

that will not trigger

Revision: 27-Feb-14

2

Document Number: 94353

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series

	www.vishay.com															Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER						SYMBOL					TEST CONDITIONS					5.MT...K		9.MT...K			11.MT...K			UNITS
Maximum junction operating						TJ, TStg												- 40 to 125						°C
and storage temperature range
									DC operation per module							0.18		0.14			0.12
Maximum thermal resistance,						RthJC			DC operation per junction							1.07		0.86			0.70
junction to case									120 °C rect. conduction angle per module							0.19		0.15			0.12			K/W
									120 °C rect. conduction angle per junction							1.17		0.91			0.74
Maximum thermal resistance,						RthCS			Mounting surface smooth, flat and grased									0.03
case to heatsink per module
Mounting			to heatsink						A mounting compound is recommended and									4 to 6						Nm
torque ± 10 %			to terminal						the torque should be rechecked after a period of									3 to 4
									3 hours to allow for the spread of the
Approximate weight																		225						g
									compound. Lubricated threads.
R CONDUCTION PER JUNCTION
				SINUSOIDAL CONDUCTION											RECTANGULAR CONDUCTION
DEVICES						AT TJ MAXIMUM									AT TJ MAXIMUM								UNITS
		180°			120°			90°		60°		30°		180°	120°	90°		60°			30°
5.MT...K		0.072			0.085			0.108		0.152		0.233		0.055	0.091	0.117		0.157			0.236
9.MT...K		0.033			0.039			0.051		0.069		0.099		0.027	0.044	0.055		0.071			0.100			K/W
11.MT...K		0.027			0.033			0.042		0.057		0.081		0.023	0.037	0.046		0.059			0.082

Note

•Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

		130
						5.MT..K Series
<![if ! IE]> <![endif]>Maximum Allowable	<![if ! IE]> <![endif]>Case Temperature (°C)	120
		110				120°
						(Rect.)
		100
					+
		90	~
					-
		80
		0	10	20	30	40	50	60

94353_01

Total Output Current (A)

Fig. 1 - Current Ratings Characteristic

<![if ! IE]> <![endif]>(A)	1000
<![if ! IE]> <![endif]>Current			TJ = 25 °C
	100					TJ = 125 °C
<![if ! IE]> <![endif]>-State
<![if ! IE]> <![endif]>On
<![if ! IE]> <![endif]>Instantaneous	10
						5.MT..K Series
						Per junction
	1
	0	1	2	3	4	5	6	7

94353_02 Instantaneous On-State Voltage (V)

Fig. 2 - Forward Voltage Drop Characteristics

Revision: 27-Feb-14

3

Document Number: 94353

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000