Vishay VS-5.MT...KPbF Series, VS-9.MT...KPbF Series, VS-11.MT...KPbF Series Data Sheet
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
MT-K
K
www.vishay.com
Three Phase Controlled Bridge (Power Modules),
PRODUCT SUMMARY
I
O
V
RRM
Package MT-K
Circuit Three phase bridge
MT-
55 A to 110 A
800 V to 1600 V
55 A to 110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 V
• UL E78996 approved
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
isolating voltage
RMS
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS
I
O
I
FSM
2
t
I
2
t 7700 45 250 63 800 A2s
I
V
RRM
T
Stg
T
J
T
C
50 Hz 390 950 1130
60 Hz 410 1000 1180
50 Hz 770 4525 6380
60 Hz 700 4130 5830
Range 800 to 1600 V
Range -40 to 125 °C
Range -40 to 125 °C
VALUES
5.MT...K
55 90 110 A
85 85 85 °C
VALUES
9.MT...K
VALUES
11.MT...K
UNITS
A
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
V
, MAXIMUM
TYPE
NUMBER
VS-5.MT...K
VS-9.MT...K
VS-11.MT...K
Revision: 27-Feb-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
80 800 900 800
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
DRM
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
Document Number: 94353
AT TJ = 125 °C
I
RRM/IDRM
MAXIMUM
mA
10
20
,
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum DC output current at
case temperature
Maximum peak, one-cycle
forward, non-repetitive on state
surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 A2s
V
V
Low level value on-state slope
resistance
High level value on-state slope
resistance
Maximum on-state voltage drop V
Maximum non-repetitve
rate of rise of turned on current
Maximum holding current I
Maximum latching current I
I
I
TSM
T(TO)1
T(TO)2
r
r
dI/dt
120° rect. conduction angle
O
t = 10 ms
t = 8.3 ms 410 1000 1180
t = 10 ms
t = 8.3 ms 345 840 1000
t = 10 ms
t = 8.3 ms 700 4130 5830
t = 10 ms
t = 8.3 ms 500 2920 4120
(16.7 % x x I
(I > x I
(16.7 % x x I
t1
(I > x I
t2
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction 2.68 1.65 1.57 V
TM
T
= 25 °C, from 0.67 V
J
I
= 500 mA, tr < 0.5 μs, tp > 6 μs
g
TJ = 25 °C, anode supply = 6 V, resistive load,
H
gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load 400
L
No voltage
reapplied
RRM
Initial T
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
), TJ maximum 1.45 1.27 1.27
T(AV)
T(AV)
), TJ maximum 11.04 3.59 3.37
T(AV)
RRM
< I < x I
< I < x I
DRM
T(AV)
T(AV)
, ITM = x I
Vishay Semiconductors
VALUES
5.MT...K
390 950 1130
330 800 950
= TJ max.
J
770 4525 6380
540 3200 4510
), TJ maximum 1.17 1.09 1.04
), TJ maximum 12.40 4.10 3.93
,
T(AV)
VALUES
9.MT...K
VALUES
11.MT...K
55 90 110 A
85 85 85 °C
150 A/μs
200
UNITS
A
2
A
s
V
m
mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS 5.MT...K 9.MT...K 11.MT...K UNITS
RMS isolation voltage V
Maximum critical rate of rise of
off-state voltage
dV/dt
ISOL
TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s 4000 V
TJ = TJ maximum, linear to 0.67 V
(1)
gate open circuit
DRM
,
500 V/μs
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS 5.MT...K 9.MT...K 11.MT...K UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current I
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
Maximum required DC gate
current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Revision: 27-Feb-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
G(AV)
- V
V
I
V
I
GM
GM
GT
GD
TJ = TJ maximum
GT
TJ = - 40 °C
T
GT
GD
= 25 °C 2.5
J
T
= 125 °C 1.7
J
TJ = - 40 °C 270
= 25 °C 150
J
T
= 125 °C 80
J
TJ = TJ maximum, rated V
Anode supply = 6 V,
resistive load
applied
DRM
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
10
2.5
2.5 A
10
4.0
0.25 V
6mA
Document Number: 94353
W
V
mAT
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 5.MT...K 9.MT...K 11.MT...K UNITS
Maximum junction operating
and storage temperature range
T
, T
J
Stg
DC operation per module 0.18 0.14 0.12
Maximum thermal resistance,
junction to case
R
thJC
DC operation per junction 1.07 0.86 0.70
120 °C rect. conduction angle per module 0.19 0.15 0.12
120 °C rect. conduction angle per junction 1.17 0.91 0.74
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
to heatsink A mounting compound is recommended and
to terminal 3 to 4
Approximate weight 225 g
R
thCS
Mounting surface smooth, flat and grased 0.03
the torque should be rechecked after a period of
3 hours to allow for the spread of the
compound. Lubricated threads.
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT T
MAXIMUM
DEVICES
J
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
5.MT...K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236
11.MT...K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
Note
• Table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
RECTANGULAR CONDUCTION
Vishay Semiconductors
- 40 to 125 °C
4 to 6
AT TJ MAXIMUM
UNITS
K/W9.MT...K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100
K/W
Nm
130
120
110
100
Maximum Allowable
90
Case Temperature (°C)
94353_01
~
80
10 20 30 40 50
0
Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics
5.MT..K Series
120°
(Rect.)
+
-
Total Output Current (A)
1000
TJ = 25 °C
100
10
Instantaneous On-State Current (A)
60
94353_02
1
0
21 3456
Instantaneous On-State Voltage (V)
TJ = 125 °C
5.MT..K Series
Per junction
7
Revision: 27-Feb-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94353
Loading...