VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com |
Vishay Semiconductors |
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Three Phase Controlled Bridge (Power Modules), 55 A to 110 A
MT-K
PRODUCT SUMMARY
IO |
55 A to 110 A |
VRRM |
800 V to 1600 V |
Package |
MT-K |
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Circuit |
Three phase bridge |
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FEATURES
• Package fully compatible with the industry standard INT-A-PAK power modules series
•High thermal conductivity package, electrically insulated case
•Excellent power volume ratio
•4000 VRMS isolating voltage
•UL E78996 approved
•Designed and qualified for industrial level
•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
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CHARACTERISTICS |
VALUES |
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VALUES |
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VALUES |
UNITS |
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5.MT...K |
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9.MT...K |
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11.MT...K |
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IO |
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55 |
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90 |
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110 |
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A |
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TC |
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85 |
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85 |
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85 |
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°C |
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IFSM |
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50 Hz |
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390 |
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950 |
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1130 |
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A |
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60 Hz |
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410 |
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1000 |
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1180 |
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I2t |
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50 Hz |
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770 |
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4525 |
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6380 |
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A2s |
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60 Hz |
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700 |
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4130 |
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5830 |
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I2 t |
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7700 |
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45 250 |
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63 800 |
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A2 s |
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VRRM |
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Range |
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800 to 1600 |
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V |
TStg |
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Range |
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-40 to 125 |
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°C |
TJ |
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Range |
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-40 to 125 |
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°C |
ELECTRICAL SPECIFICATIONS |
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VOLTAGE RATINGS |
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VRRM, MAXIMUM |
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VRSM, MAXIMUM |
VDRM, MAXIMUM |
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IRRM/IDRM, |
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TYPE |
VOLTAGE |
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REPETITIVE PEAK |
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REPETITIVE PEAK |
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NON-REPETITIVE PEAK |
OFF-STATE VOLTAGE, |
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MAXIMUM |
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NUMBER |
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CODE |
REVERSE VOLTAGE |
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REVERSE VOLTAGE |
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AT TJ = 125 °C |
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GATE OPEN CIRCUIT |
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V |
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V |
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V |
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mA |
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80 |
800 |
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900 |
800 |
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100 |
1000 |
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1100 |
1000 |
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VS-5.MT...K |
120 |
1200 |
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1300 |
1200 |
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10 |
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140 |
1400 |
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1500 |
1400 |
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160 |
1600 |
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1700 |
1600 |
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80 |
800 |
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900 |
800 |
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VS-9.MT...K |
100 |
1000 |
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1100 |
1000 |
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120 |
1200 |
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1300 |
1200 |
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20 |
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VS-11.MT...K |
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140 |
1400 |
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1500 |
1400 |
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160 |
1600 |
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1700 |
1600 |
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Revision: 27-Feb-14 |
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1 |
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Document Number: 94353 |
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com |
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Vishay Semiconductors |
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FORWARD CONDUCTION |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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VALUES |
VALUES |
VALUES |
UNITS |
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5.MT...K |
9.MT...K |
11.MT...K |
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Maximum DC output current at |
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IO |
120° rect. conduction angle |
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55 |
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90 |
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110 |
A |
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case temperature |
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85 |
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85 |
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85 |
°C |
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Maximum peak, one-cycle |
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t = 10 ms |
No voltage |
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390 |
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950 |
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1130 |
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t = 8.3 ms |
reapplied |
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410 |
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1000 |
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1180 |
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forward, non-repetitive on state |
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ITSM |
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A |
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t = 10 ms |
100 % VRRM |
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330 |
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800 |
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950 |
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surge current |
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t = 8.3 ms |
reapplied |
Initial TJ = TJ max. |
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345 |
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840 |
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1000 |
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t = 10 ms |
No voltage |
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770 |
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4525 |
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6380 |
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Maximum I2t for fusing |
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I2t |
t = 8.3 ms |
reapplied |
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700 |
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4130 |
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5830 |
A2s |
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t = 10 ms |
100 % VRRM |
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540 |
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3200 |
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4510 |
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t = 8.3 ms |
reapplied |
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500 |
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2920 |
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4120 |
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Maximum I2 t for fusing |
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I2 t |
t = 0.1 ms to 10 ms, no voltage reapplied |
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7700 |
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45 250 |
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63 800 |
A2 s |
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Low level value of threshold |
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VT(TO)1 |
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum |
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1.17 |
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1.09 |
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1.04 |
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voltage |
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V |
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High level value of threshold |
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VT(TO)2 |
(I > x IT(AV)), TJ maximum |
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1.45 |
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1.27 |
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1.27 |
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voltage |
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Low level value on-state slope |
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rt1 |
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum |
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12.40 |
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4.10 |
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3.93 |
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resistance |
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m |
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High level value on-state slope |
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rt2 |
(I > x IT(AV)), TJ maximum |
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11.04 |
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3.59 |
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3.37 |
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resistance |
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Maximum on-state voltage drop |
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VTM |
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction |
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2.68 |
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1.65 |
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1.57 |
V |
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Maximum non-repetitve |
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dI/dt |
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV), |
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150 |
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A/μs |
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rate of rise of turned on current |
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Ig = 500 mA, tr < 0.5 μs, tp > 6 μs |
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Maximum holding current |
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IH |
TJ = 25 °C, anode supply = 6 V, resistive load, |
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200 |
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gate open circuit |
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mA |
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Maximum latching current |
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IL |
TJ = 25 °C, anode supply = 6 V, resistive load |
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400 |
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BLOCKING |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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5.MT...K |
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9.MT...K |
11.MT...K |
UNITS |
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RMS isolation voltage |
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VISOL |
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TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s |
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4000 |
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V |
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Maximum critical rate of rise of |
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dV/dt (1) |
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TJ = TJ maximum, linear to 0.67 VDRM, |
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500 |
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V/μs |
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off-state voltage |
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gate open circuit |
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Note |
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(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90 |
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TRIGGERING |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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5.MT...K |
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9.MT...K |
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11.MT...K |
UNITS |
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Maximum peak gate power |
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PGM |
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10 |
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W |
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Maximum average gate power |
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PG(AV) |
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2.5 |
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Maximum peak gate current |
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IGM |
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TJ = TJ maximum |
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2.5 |
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A |
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Maximum peak negative |
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- VGT |
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10 |
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gate voltage |
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Maximum required DC gate |
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TJ = - 40 °C |
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4.0 |
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V |
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VGT |
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TJ = 25 °C |
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2.5 |
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voltage to trigger |
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TJ = 125 °C |
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Anode supply = 6 V, |
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1.7 |
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Maximum required DC gate |
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TJ = - 40 °C |
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resistive load |
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270 |
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IGT |
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TJ = 25 °C |
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150 |
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mA |
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current to trigger |
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TJ = 125 °C |
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80 |
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Maximum gate voltage |
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VGD |
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0.25 |
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V |
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that will not trigger |
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TJ = TJ maximum, rated VDRM applied |
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Maximum gate current |
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IGD |
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6 |
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mA |
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that will not trigger |
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Revision: 27-Feb-14 |
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|
|
|
2 |
|
|
|
|
|
Document Number: 94353 |
|
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
|
www.vishay.com |
|
|
|
|
|
|
|
|
Vishay Semiconductors |
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THERMAL AND MECHANICAL SPECIFICATIONS |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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5.MT...K |
9.MT...K |
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11.MT...K |
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UNITS |
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Maximum junction operating |
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TJ, TStg |
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- 40 to 125 |
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°C |
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and storage temperature range |
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DC operation per module |
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0.18 |
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0.14 |
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0.12 |
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Maximum thermal resistance, |
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RthJC |
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DC operation per junction |
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1.07 |
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0.86 |
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0.70 |
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junction to case |
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120 °C rect. conduction angle per module |
0.19 |
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0.15 |
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0.12 |
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K/W |
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120 °C rect. conduction angle per junction |
1.17 |
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0.91 |
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0.74 |
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Maximum thermal resistance, |
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RthCS |
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Mounting surface smooth, flat and grased |
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0.03 |
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case to heatsink per module |
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Mounting |
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to heatsink |
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A mounting compound is recommended and |
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4 to 6 |
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Nm |
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torque ± 10 % |
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to terminal |
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the torque should be rechecked after a period of |
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3 to 4 |
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3 hours to allow for the spread of the |
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Approximate weight |
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225 |
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g |
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compound. Lubricated threads. |
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R CONDUCTION PER JUNCTION |
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SINUSOIDAL CONDUCTION |
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RECTANGULAR CONDUCTION |
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DEVICES |
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AT TJ MAXIMUM |
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AT TJ MAXIMUM |
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UNITS |
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180° |
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120° |
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90° |
60° |
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30° |
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180° |
120° |
90° |
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60° |
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30° |
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5.MT...K |
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0.072 |
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0.085 |
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0.108 |
0.152 |
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0.233 |
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0.055 |
0.091 |
0.117 |
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0.157 |
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0.236 |
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9.MT...K |
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0.033 |
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0.039 |
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0.051 |
0.069 |
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0.099 |
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0.027 |
0.044 |
0.055 |
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0.071 |
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0.100 |
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K/W |
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11.MT...K |
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0.027 |
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0.033 |
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0.042 |
0.057 |
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0.081 |
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0.023 |
0.037 |
0.046 |
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0.059 |
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0.082 |
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Note
•Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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130 |
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5.MT..K Series |
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<![if ! IE]> <![endif]>Maximum Allowable |
<![if ! IE]> <![endif]>Case Temperature (°C) |
120 |
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110 |
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120° |
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(Rect.) |
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100 |
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+ |
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90 |
~ |
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- |
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80 |
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0 |
10 |
20 |
30 |
40 |
50 |
60 |
94353_01 |
Total Output Current (A) |
Fig. 1 - Current Ratings Characteristic
<![if ! IE]> <![endif]>(A) |
1000 |
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<![if ! IE]> <![endif]>Current |
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TJ = 25 °C |
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100 |
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TJ = 125 °C |
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<![if ! IE]> <![endif]>-State |
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<![if ! IE]> <![endif]>On |
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<![if ! IE]> <![endif]>Instantaneous |
10 |
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5.MT..K Series |
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Per junction |
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1 |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
94353_02 Instantaneous On-State Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14 |
3 |
Document Number: 94353 |
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000