Vishay VS-54-94-104MT..KPbF Series Data Sheet
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MT-K
K
Three Phase AC Switch (Power Modules),
PRODUCT SUMMARY
I
O
V
RRM
Package MT-K
Circuit Three phase AC switch
MT-
50 A to 100 A
800 V to 1600 V
VS-54-94-104MT..KPbF Series
50 A to 100 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Outstanding number of power encapsulated components
• Excellent power volume ratio
• 4000 V
• UL E78996 approved
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase
AC switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.
isolating voltage
RMS
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS
I
O
I
FSM
2
t
I
2
t 7700 45250 63800 A2s
I
V
RRM
T
Stg
T
J
T
C
50 Hz 390 950 1130
60 Hz 410 1000 1180
50 Hz 770 4525 6380
60 Hz 700 4130 5830
Range 800 to 1600 V
Range -40 to 125 °C
Range -40 to 125 °C
VALUES
54MT.K
50 90 100 A
80 80 80 °C
VALUES
94MT.K
VALUES
104MT.K
UNITS
A
A2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
V
, MAXIMUM
TYPE NUMBER
VS-54MT..K
VS-94/104MT..K
Note
(1)
For single AC switch
Revision: 03-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
80 800 900 800
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RRM
REPETITIVE PEAK
REVERSE VOLTAGE V
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
V
, MAXIMUM REPETITIVE
DRM
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
Document Number: 94351
I
RRM/IDRM
MAXIMUM
AT T
= 125 °C
J
mA
20
40
,
(1)
(1)
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum I
at case temperature
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage
drop
Maximum non-repetitive rate
of rise of turned on current
Maximum holding current I
Maximum latching current I
output current
RMS
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 A2s
I
V
T(TO)1
V
T(TO)2
V
dI/dt
I
O
TSM
r
t1
r
t2
TM
H
L
For all conduction angle
t = 10 ms
t = 8.3 ms 410 1000 1180
t = 10 ms
t = 8.3 ms 345 840 1000
t = 10 ms
t = 8.3 ms 700 4130 5830
t = 10 ms
t = 8.3 ms 500 2920 4120
(16.7 % x x I
(I > x I
16.7 % x x I
(I > x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
< I < x I
T(AV)
), TJ maximum 1.44 1.19 1.15
T(AV)
< I < x I
T(AV)
), TJ maximum 11.00 3.56 3.48
T(AV)
RRM
T(AV)
T(AV)
Ipk = 150 A, TJ = 25 °C
t
= 400 μs single junction
p
T
= 25 °C, from 0.67 V
J
I
= 500 mA, tr < 0.5 μs, tp > 6 μs
g
, ITM = x I
DRM
TJ = 25 °C, anode supply = 6 V,
resistive load, grate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load 400
VS-54-94-104MT..KPbF Series
Vishay Semiconductors
VALUES
54MT.K
50 90 100 A
80 80 80 °C
390 950 1130
330 800 950
Initial T
maximum
= TJ
J
770 4525 6380
540 3200 4510
), TJ maximum 1.16 0.99 0.99
), TJ maximum 12.54 4.16 3.90
2.68 1.55 1.53 V
,
T(AV)
VALUES
94MT.K
VALUES
104MT.K
150 A/μs
200
UNITS
A
2
A
s
V
m
mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS 54MT.K 94MT.K 104MT.K UNITS
RMS isolation voltage V
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = 25 °C all terminal shorted
INS
f = 50 Hz, t = 1 s
TJ = TJ maximum, linear to 0.67 V
(1)
gate open circuit
DRM
4000 V
,
500 V/μs
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 104MT160KBS90
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS 54MT.K 94MT.K 104MT.K UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current I
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
Maximum required DC gate
current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Revision: 03-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- V
GM
G(AV)
GM
V
GT
I
GT
V
GD
I
GD
TJ = TJ maximum
GT
TJ = 40 °C
= 25 °C 2.5
T
J
T
= 125 °C 1.7
J
TJ = -40 °C 270
= 25 °C 150
J
T
= 125 °C 80
J
TJ = TJ maximum, rated V
Anode supply = 6 V, resistive
load
applied
DRM
2
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10
2.5
2.5 A
10
4.0
0.25 V
6mA
Document Number: 94351
W
V
mAT
VS-54-94-104MT..KPbF Series
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 54MT.K 94MT.K 104MT.K UNITS
Maximum junction operating
and storage temperature range
T
, T
J
Stg
DC operation per single AC switch 0.52 0.39 0.34
Maximum thermal resistance,
junction to case
R
thJC
DC operation per junction 1.05 0.77 0.69
180 °C sine cond. angle per single AC switch 0.56 0.40 0.36
180 °C sine cond. angle per junction 1.12 0.80 0.72
Maximum thermal resistance,
case to heatsink
Mounting
torque ± 100 %
to heatsink A mounting compound is recommended and
to terminal 3 to 4
R
thCS
Approximate weight 225 g
Per module
Mounting surface smooth, flat and grased
the torque should be rechecked after a
pe rio d of 3 ho urs to all ow for th e sp read o f
the
compound. Lubricated threads.
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT T
MAXIMUM
DEVICES
J
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
54MT.K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236
104MT.K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
Note
• Table shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
RECTANGULAR CONDUCTION
Vishay Semiconductors
-40 to 125 °C
0.03
4 to 6
AT TJ MAXIMUM
UNITS
K/W94MT.K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100
K/W
Nm
130
120
110
100
90
Per single AC switch
80
Temperature (°C)
Maximum Allowable Case
~
70
For all conduction angles
60
0
10 20
RMS Output Current (A)
Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics
54MT..K Series
Device fully turned-on
I
RMS
30 40
1000
TJ = 25 °C
100
10
54MT..K Series
Per junction
Instantaneous On-State Current (A)
50
60
1
1
0
234
TJ = 125 °C
5
6
Instantaneous On-State Voltage (V)
Revision: 03-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94351
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