Vishay VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3) Data Sheet
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
DO-204AR
www.vishay.com
PRODUCT SUMMARY
Package DO-204AR
I
F(AV)
V
R
V
at I
F
F
I
max. 7.0 mA at 125 °C
RM
T
max. 175 °C
J
Diode variation Single die
E
AS
Schottky Rectifier, 5 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
Cathode Anode
5 A
60 V, 80 V, 100 V
0.52 V
7.5 mJ
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified for commercial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-50SQ... axial leaded Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 5 A
Range 60 to 100 V
tp = 5 μs sine 1900 A
5 Apk, TJ = 125 °C 0.52 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
VS-50SQ060
VS-50SQ060-M3
60 80 100 V
VS-50SQ080
VS-50SQ080-M3
VS-50SQ100
VS-50SQ100-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 119 °C, rectangular waveform 5
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 290
TJ = 25 °C, I
AS
Current decaying linearly to zero in 1 μs
Frequency limited by, T
= 1.0 A, L = 15 mH 7.5 mJ
AS
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
1900
1.0 A
A
Revision: 19-Sep-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93355
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
5 A
Maximum forward voltage drop
See fig. 1
V
FM
10 A 0.77
(1)
5 A
10 A 0.62
Maximum reverse leakage current
See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 7
J
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 500 pF
Measured lead to lead 5 mm from body 10 nH
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Typical thermal resistance,
junction to air
Approximate weight
Marking device Case style DO-204AR (JEDEC)
T
, T
J
Stg
R
thJL
R
thJA
DC operation; see fig. 4
1/8" lead length
Vishay Semiconductors
0.66
0.52
0.55
R
10 000 V/μs
- 55 to 175 °C
8.0
44
1.4 g
0.049 oz.
50SQ060
50SQ080
50SQ100
V
mA
°C/W
Revision: 19-Sep-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93355
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
0.0001
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 25 °C
TJ = 50 °C
I
R
- Reverse Current (mA)
VR - Reverse Voltage (V)
93355_02
= 1/8 inch
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
D = 0.01
0.01
0.1
10
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 - Rectangular Pulse Duration (s)
93355_04
Z
thJC
- Thermal Impedance (°C/W)
www.vishay.com
100
Vishay Semiconductors
10
1
0.1
- Instantaneous Forward Current (A)
F
I
93355_01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
T J = 175 °C
= 125 °C
T
J
T
= 25 °C
J
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
0 20 40 60 80 100
93355_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Revision: 19-Sep-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 4 - Maximum Thermal Impedance Z
3
Characteristics
thJL
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93355
Loading...