www.vishay.com
TO-208AC (TO-65)
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/μs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VS-50RIA Series
Vishay Semiconductors
DRM/VRRM
PRODUCT SUMMARY
Package TO-208AC (TO-65)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
100 V to 1200 V
-40 °C to 125 °C
50 A
1.60 V
100 mA
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 1430
60 Hz 1490
50 Hz 10.18
60 Hz 9.30
Typical 110 μs
50 A
94 °C
80 A
100 to 1200 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
A
kA2s
VOLTAGE RATINGS
V
TYPE
NUMBER
VS-50RIA
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with tp 5 ms
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
10 100 150
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, MAXIMUM REPETITIVE
V
(1)
NON-REPETITIVE PEAK VOLTAGE
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
, MAXIMUM
V
RSM
V
I
DRM/IRRM
(2)
Document Number: 93711
MAXIMUM AT
T
= TJ MAXIMUM
J
mA
15
VS-50RIA Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Maximum on-state voltage V
Maximum holding current I
Latching current I
I
T(AV)
T(RMS)
I
TSM
180° sinusoidal conduction
80 A
t = 10 ms
t = 8.3 ms 1490
t = 10 ms
t = 8.3 ms 1255
t = 10 ms
t = 8.3 ms 9.30
t = 10 ms
t = 8.3 ms 6.56
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
t = 0.1 to 10 ms, no voltage reapplied,
T
= TJ maximum
J
T(TO)1
T(TO)2
r
t1
r
t2
TM
H
L
(16.7 % x x I
( x I
< I < 20 x x I
T(AV)
(16.7 % x x I
( x I
< I < 20 x x I
T(AV)
Ipk = 157 A, TJ = 25 °C 1.60 V
TJ = 25 °C, anode supply 22 V, resistive load,
initial I
= 2 A
T
Anode supply 6 V, resistive load 400
T(AV)
T(AV)
< I < x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.08
T(AV)
), TJ = TJ maximum 3.34
Vishay Semiconductors
50 A
94 °C
1430
1200
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.94
), TJ = TJ maximum 4.08
10.18
7.20
101.8 kA
200
A
kA2s
2
V
m
mA
s
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
V
600 V
Maximum rate of
rise of turned-on current
DRM
1600 V 100
V
DRM
dI/dt
Typical delay time t
Typical turn-off time t
= 125 °C, VDM = Rated V
T
C
Gate pulse = 20 V, 15 , t
I
= (2 x rated dI/dt) A
TM
TC = 25 °C, VDM = Rated V
d
Gate pulse = 10 V, 15 source, t
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/μs
q
dIr/dt = - 10 A/μs, V
= 50 V
R
,
DRM
= 6 μs, tr = 0.1 μs maximum
p
, ITM = 10 A dc resistive circuit
DRM
= 20 μs
p
200
0.9
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
J
T
= TJ maximum linear to 67 % rated V
J
DRM
DRM
= TJ maximum linear to 100 % rated V
T
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93711
200
(1)
500
A/μs
μs
V/μs
VS-50RIA Series
www.vishay.com
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
G(AV)
GM
GT
GD
TJ = TJ maximum, tp 5 ms 10
GM
GM
GM
TJ = - 40 °C
= 25 °C 100
J
= 125 °C 50
T
J
TJ = - 40 °C 3.5
GT
T
= 25 °C 2.5
J
TJ = TJ maximum,
V
= Rated voltage
DRM
TJ = TJ maximum 0.2 V
GD
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
W
V
mAT
V
anode to
DRM
2.5
2.5 A
20
10
250
5.0 mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet TO-208AC (TO-65)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.078 0.057
120° 0.094 0.098
90° 0.120 0.130
60° 0.176 0.183
30° 0.294 0.296
Note
• The table above shows the increment of thermal resistance R
, T
T
J
Stg
R
R
thJC
thCS
DC operation 0.35
Mounting surface, smooth, flat and greased 0.25
Non-lubricated threads
-40 to 125 °C
+ 0 - 10
3.4
%
(30)
Lubricated threads
2.3
+ 0 - 10
%
(lbf · in)
(20)
28 g
1.0 oz.
T
= TJ maximum K/W
J
when devices operate at different conduction angles than DC
thJC
K/W
N · m
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93711
www.vishay.com
90
100
110
120
130
0 102030405060
30°
60°
90°
120°
180°
Average On-state Current (A)
Maxi mum All owable Case Te mperat ure (° C)
Conduction Angl e
50RIA Series
R (DC) = 0.35 K/W
thJC
80
90
100
110
120
130
0 1020304050607080
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Per iod
50RIA Series
R (DC) = 0.35 K/W
thJC
0
10
20
30
40
50
60
70
80
0 1020304050
RMS Limi t
Conducti on Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series
T = 125°C
J
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Co nduct ion May No t Be Main tained .
Initial T = 125°C
No Vol tage Reappl ie d
Rated V Reapplied
RRM
J
50RIA Series
VS-50RIA Series
Vishay Semiconductors
Fig. 1 - Current Ratings Characteristics
100
90
80
70
60
50
40
30
20
10
Maximum Average On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
RMS Limi t
Conductio n Period
50RIA Series
T = 125°C
J
0
0 1020304050607080
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
1300
1200
1100
1000
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig. 2 - Current Ratings Characteristics
Revision: 11-Mar-14
Fig. 3 - On-State Power Loss Characteristics
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
900
800
700
50RIA Series
Peak Half Sine Wave On-state Current (A)
600
110100
Number Of Equal Amplit ude Half Cycl e Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93711
www.vishay.com
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duratio n (s)
thJ-hs
Steady State Val ue
R = 0.35 K/W
thJ-hs
Transient Thermal Impedance Z (K/W)
50RIA Ser ies
1000
100
VS-50RIA Series
Vishay Semiconductors
T = 25°C
J
T = 125°C
10
J
Instantaneous On-state Current (A)
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
50RIA Series
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
tr<=1 µs
10
1
Instantaneous Gate Volt age (V)
VGD
0.1
0.001 0.01 0.1 1 10 100 1000
IGD
(b)
Tj=125 °C
Instantaneous Gate Current (A)
(a)
Tj=-40 °C
Tj=25 °C
50RIA Series Frequency Limited by PG(AV)
Fig. 9 - Gate Characteristics
Characteristics
thJC
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(1)
(2)
(3) (4)
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
Document Number: 93711
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
A
ORDERING INFORMATION TABLE
VS-50RIA Series
Vishay Semiconductors
Device code
VS-
50 RIA 120 S90 M
51 32 4
6
1 - Vishay Semiconductors product
- Current code
2
- Essential part number
3
4
- Voltage code x 10 = V
- Critical dV/dt:
5
(see Voltage Ratings table)
RRM
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
-
6
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2
M = Stud base TO-208AC (TO-65) M6 x 1
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95334
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93711
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
TO-208AC (TO-65)
5.1/7.6
(0.2/0.3)
31 MAX.
(1.22 MAX.)
3 MIN.
(0.118 MIN.)
Ø 15 (Ø 0.59)
10.7/11.5
(0.42/0.46)
Ø 4.1 (Ø 0.16)
1/4"-28UNF-2A
for metric device M6 x 1
Ø 19.2 (Ø 0.75)
2.5/3.6
(0.1/0.14)
Ø 1.5 (Ø 0.06)
14.5 MAX.
(0.57 MAX.)
22.4 MAX.
(0.88 MAX.)
17.2/17.35
(0.67/0.68)
Across flats
1.7/1.8
(0.06/0.07)
2.7 (0.106)
Document Number: 95334 For technical questions, contact: indmodules@vishay.com
Revision: 08-Jul-08 1
www.vishay.com
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Loading...