Vishay VS-50RIA Series Data Sheet
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TO-208AC (TO-65)
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/μs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VS-50RIA Series
Vishay Semiconductors
DRM/VRRM
PRODUCT SUMMARY
Package TO-208AC (TO-65)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
100 V to 1200 V
-40 °C to 125 °C
50 A
1.60 V
100 mA
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
• Battery charges
• Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 1430
60 Hz 1490
50 Hz 10.18
60 Hz 9.30
Typical 110 μs
50 A
94 °C
80 A
100 to 1200 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
A
kA2s
VOLTAGE RATINGS
V
TYPE
NUMBER
VS-50RIA
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with tp 5 ms
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
10 100 150
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, MAXIMUM REPETITIVE
V
(1)
NON-REPETITIVE PEAK VOLTAGE
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
, MAXIMUM
V
RSM
V
I
DRM/IRRM
(2)
Document Number: 93711
MAXIMUM AT
T
= TJ MAXIMUM
J
mA
15
VS-50RIA Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Maximum on-state voltage V
Maximum holding current I
Latching current I
I
T(AV)
T(RMS)
I
TSM
180° sinusoidal conduction
80 A
t = 10 ms
t = 8.3 ms 1490
t = 10 ms
t = 8.3 ms 1255
t = 10 ms
t = 8.3 ms 9.30
t = 10 ms
t = 8.3 ms 6.56
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
t = 0.1 to 10 ms, no voltage reapplied,
T
= TJ maximum
J
T(TO)1
T(TO)2
r
t1
r
t2
TM
H
L
(16.7 % x x I
( x I
< I < 20 x x I
T(AV)
(16.7 % x x I
( x I
< I < 20 x x I
T(AV)
Ipk = 157 A, TJ = 25 °C 1.60 V
TJ = 25 °C, anode supply 22 V, resistive load,
initial I
= 2 A
T
Anode supply 6 V, resistive load 400
T(AV)
T(AV)
< I < x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.08
T(AV)
), TJ = TJ maximum 3.34
Vishay Semiconductors
50 A
94 °C
1430
1200
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.94
), TJ = TJ maximum 4.08
10.18
7.20
101.8 kA
200
A
kA2s
2
V
m
mA
s
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
V
600 V
Maximum rate of
rise of turned-on current
DRM
1600 V 100
V
DRM
dI/dt
Typical delay time t
Typical turn-off time t
= 125 °C, VDM = Rated V
T
C
Gate pulse = 20 V, 15 , t
I
= (2 x rated dI/dt) A
TM
TC = 25 °C, VDM = Rated V
d
Gate pulse = 10 V, 15 source, t
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/μs
q
dIr/dt = - 10 A/μs, V
= 50 V
R
,
DRM
= 6 μs, tr = 0.1 μs maximum
p
, ITM = 10 A dc resistive circuit
DRM
= 20 μs
p
200
0.9
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
J
T
= TJ maximum linear to 67 % rated V
J
DRM
DRM
= TJ maximum linear to 100 % rated V
T
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93711
200
(1)
500
A/μs
μs
V/μs
VS-50RIA Series
www.vishay.com
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
G(AV)
GM
GT
GD
TJ = TJ maximum, tp 5 ms 10
GM
GM
GM
TJ = - 40 °C
= 25 °C 100
J
= 125 °C 50
T
J
TJ = - 40 °C 3.5
GT
T
= 25 °C 2.5
J
TJ = TJ maximum,
V
= Rated voltage
DRM
TJ = TJ maximum 0.2 V
GD
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
W
V
mAT
V
anode to
DRM
2.5
2.5 A
20
10
250
5.0 mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet TO-208AC (TO-65)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.078 0.057
120° 0.094 0.098
90° 0.120 0.130
60° 0.176 0.183
30° 0.294 0.296
Note
• The table above shows the increment of thermal resistance R
, T
T
J
Stg
R
R
thJC
thCS
DC operation 0.35
Mounting surface, smooth, flat and greased 0.25
Non-lubricated threads
-40 to 125 °C
+ 0 - 10
3.4
%
(30)
Lubricated threads
2.3
+ 0 - 10
%
(lbf · in)
(20)
28 g
1.0 oz.
T
= TJ maximum K/W
J
when devices operate at different conduction angles than DC
thJC
K/W
N · m
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93711
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