Vishay VS-50RIA Series Data Sheet

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TO-208AC (TO-65)
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
• High current rating
• Excellent dynamic characteristics
• dV/dt = 1000 V/μs option
• Superior surge capabilities
• Standard package
• Metric threads version available
• Types up to 1200 V V
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
VS-50RIA Series
Vishay Semiconductors
DRM/VRRM
PRODUCT SUMMARY
Package TO-208AC (TO-65)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
100 V to 1200 V
-40 °C to 125 °C
50 A
1.60 V
100 mA
TYPICAL APPLICATIONS
• Phase control applications in converters
• Lighting circuits
• Battery charges
• Regulated power supplies and temperature and speed control circuit
• Can be supplied to meet stringent military, aerospace and other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 1430
60 Hz 1490
50 Hz 10.18
60 Hz 9.30
Typical 110 μs
50 A
94 °C
80 A
100 to 1200 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
A
kA2s
VOLTAGE RATINGS
V
TYPE NUMBER
VS-50RIA
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with tp 5 ms
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VOLTAGE
CODE
10 100 150
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
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, MAXIMUM REPETITIVE
V
(1)
NON-REPETITIVE PEAK VOLTAGE
1
, MAXIMUM
V
RSM
V
I
DRM/IRRM
(2)
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MAXIMUM AT
T
= TJ MAXIMUM
J
mA
15
VS-50RIA Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t
Low level value of threshold voltage V
High level value of threshold voltage V Low level value of on-state
slope resistance High level value of on-state
slope resistance
Maximum on-state voltage V
Maximum holding current I
Latching current I
I
T(AV)
T(RMS)
I
TSM
180° sinusoidal conduction
80 A
t = 10 ms
t = 8.3 ms 1490
t = 10 ms
t = 8.3 ms 1255
t = 10 ms
t = 8.3 ms 9.30
t = 10 ms
t = 8.3 ms 6.56
No voltage reapplied
100 % V reapplied
RRM
No voltage reapplied
100 % V reapplied
RRM
t = 0.1 to 10 ms, no voltage reapplied, T
= TJ maximum
J
T(TO)1
T(TO)2
r
t1
r
t2
TM
H
L
(16.7 % x x I ( x I
< I < 20 x x I
T(AV)
(16.7 % x x I
( x I
< I < 20 x x I
T(AV)
Ipk = 157 A, TJ = 25 °C 1.60 V
TJ = 25 °C, anode supply 22 V, resistive load, initial I
= 2 A
T
Anode supply 6 V, resistive load 400
T(AV)
T(AV)
< I < x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.08
T(AV)
), TJ = TJ maximum 3.34
Vishay Semiconductors
50 A
94 °C
1430
1200
Sinusoidal half wave, initial T
= TJ maximum
J
), TJ = TJ maximum 0.94
), TJ = TJ maximum 4.08
10.18
7.20
101.8 kA
200
A
kA2s
2
V
m
mA
s
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
V
600 V
Maximum rate of rise of turned-on current
DRM
1600 V 100
V
DRM
dI/dt
Typical delay time t
Typical turn-off time t
= 125 °C, VDM = Rated V
T
C
Gate pulse = 20 V, 15 , t I
= (2 x rated dI/dt) A
TM
TC = 25 °C, VDM = Rated V
d
Gate pulse = 10 V, 15 source, t
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/μs
q
dIr/dt = - 10 A/μs, V
= 50 V
R
,
DRM
= 6 μs, tr = 0.1 μs maximum
p
, ITM = 10 A dc resistive circuit
DRM
= 20 μs
p
200
0.9
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
J
T
= TJ maximum linear to 67 % rated V
J
DRM
DRM
= TJ maximum linear to 100 % rated V
T
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
Revision: 11-Mar-14
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Document Number: 93711
200
(1)
500
A/μs
μs
V/μs
VS-50RIA Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
G(AV)
GM
GT
GD
TJ = TJ maximum, tp 5 ms 10
GM
GM
GM
TJ = - 40 °C
= 25 °C 100
J
= 125 °C 50
T
J
TJ = - 40 °C 3.5
GT
T
= 25 °C 2.5
J
TJ = TJ maximum, V
= Rated voltage
DRM
TJ = TJ maximum 0.2 V
GD
Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied
Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated V cathode applied
Vishay Semiconductors
W
V
mAT
V
anode to
DRM
2.5
2.5 A
20
10
250
5.0 mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet TO-208AC (TO-65)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.078 0.057
120° 0.094 0.098
90° 0.120 0.130
60° 0.176 0.183
30° 0.294 0.296
Note
• The table above shows the increment of thermal resistance R
, T
T
J
Stg
R
R
thJC
thCS
DC operation 0.35
Mounting surface, smooth, flat and greased 0.25
Non-lubricated threads
-40 to 125 °C
+ 0 - 10
3.4
%
(30)
Lubricated threads
2.3
+ 0 - 10
%
(lbf · in)
(20)
28 g
1.0 oz.
T
= TJ maximum K/W
J
when devices operate at different conduction angles than DC
thJC
K/W
N · m
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90
100
110
120
130
0 102030405060
30°
60°
90°
120°
180°
Average On-state Current (A)
Maxi mum All owable Case Te mperat ure (° C)
Conduction Angl e
50RIA Series R (DC) = 0.35 K/W
thJC
80
90
100
110
120
130
0 1020304050607080
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Per iod
50RIA Series R (DC) = 0.35 K/W
thJC
0
10
20
30
40
50
60
70
80
0 1020304050
RMS Limi t
Conducti on Angle
180° 120°
90° 60° 30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
50RIA Series T = 125°C
J
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Co nduct ion May No t Be Main tained .
Initial T = 125°C
No Vol tage Reappl ie d
Rated V Reapplied
RRM
J
50RIA Series
VS-50RIA Series
Vishay Semiconductors
Fig. 1 - Current Ratings Characteristics
100
90
80
70
60
50
40
30
20
10
Maximum Average On-state Power Loss (W)
DC 180° 120°
90° 60° 30°
RMS Limi t
Conductio n Period
50RIA Series T = 125°C
J
0
0 1020304050607080
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
1300
1200
1100
1000
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Fig. 2 - Current Ratings Characteristics
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Fig. 3 - On-State Power Loss Characteristics
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900
800
700
50RIA Series
Peak Half Sine Wave On-state Current (A)
600
110100
Number Of Equal Amplit ude Half Cycl e Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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Document Number: 93711
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0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duratio n (s)
thJ-hs
Steady State Val ue
R = 0.35 K/W
thJ-hs
Transient Thermal Impedance Z (K/W)
50RIA Ser ies
1000
100
VS-50RIA Series
Vishay Semiconductors
T = 25°C
J
T = 125°C
10
J
Instantaneous On-state Current (A)
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
50RIA Series
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
100
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5 µs b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 µs
10
1
Instantaneous Gate Volt age (V)
VGD
0.1
0.001 0.01 0.1 1 10 100 1000
IGD
(b)
Tj=125 °C
Instantaneous Gate Current (A)
(a)
Tj=-40 °C
Tj=25 °C
50RIA Series Frequency Limited by PG(AV)
Fig. 9 - Gate Characteristics
Characteristics
thJC
(1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs
(1)
(2)
(3) (4)
Revision: 11-Mar-14
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Document Number: 93711
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A
ORDERING INFORMATION TABLE
VS-50RIA Series
Vishay Semiconductors
Device code
VS-
50 RIA 120 S90 M
51 32 4
6
1 - Vishay Semiconductors product
- Current code
2
- Essential part number
3
4
- Voltage code x 10 = V
- Critical dV/dt:
5
(see Voltage Ratings table)
RRM
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
-
6
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2
M = Stud base TO-208AC (TO-65) M6 x 1
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95334
Revision: 11-Mar-14
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Document Number: 93711
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
TO-208AC (TO-65)
5.1/7.6
(0.2/0.3)
31 MAX.
(1.22 MAX.)
3 MIN.
(0.118 MIN.)
Ø 15 (Ø 0.59)
10.7/11.5
(0.42/0.46)
Ø 4.1 (Ø 0.16)
1/4"-28UNF-2A
for metric device M6 x 1
Ø 19.2 (Ø 0.75)
2.5/3.6
(0.1/0.14)
Ø 1.5 (Ø 0.06)
14.5 MAX.
(0.57 MAX.)
22.4 MAX.
(0.88 MAX.)
17.2/17.35 (0.67/0.68)
Across flats
1.7/1.8
(0.06/0.07)
2.7 (0.106)
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