Vishay VS-48CTQ060PbF Data Sheet
TO-220AB
Schottky Rectifier, 2 x 20 A
VS-48CTQ060PbF
Vishay Semiconductors
Base
common
cathode
2
FEATURES
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
Anode
Common
13
cathode
Anode
2
reliability
• 150 °C T
operation
J
• Center tap configuration
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
V
at I
F
F
I
RM
max. 150 °C
T
J
Diode variation Common cathode
E
AS
89 mA at 125 °C
2 x 20 A
60 V
0.58 V
13 mJ
• High frequency operation
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 40 A
60 V
tp = 5 μs sine 1000 A
20 Apk, TJ = 125 °C (per leg) 0.58 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-48CTQ060PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94229 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Oct-10 DiodesAmericas@vishay.com
per leg
per device 40
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 111 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 260
TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH 13 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
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maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
20
A
1000
1.50 A
VS-48CTQ060PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
40 A 0.83
(1)
20 A
40 A 0.75
Maximum reverse leakage current per leg
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
TJ = 25 °C
(1)
T
= 125 °C 89
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1220 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.61
0.58
2
0.37 V
8.26 m
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB 48CTQ060
T
, T
J
Stg
R
DC operation
thJC
R
thCS
- 55 to 150 °C
2.0
1.0
Mounting surface, smooth and greased 0.50
2g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94229
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Oct-10
1
10
0.8
1.2
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.40 0.2 0.6 1.0 1.4
1000
1.6 1.8 2.0 2.2
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
10 000
02030
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10
1000
40 50 60
TJ = 25 °C
100
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
100
0.01
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
P
DM
t
1
t
2
10
VS-48CTQ060PbF
Schottky Rectifier, 2 x 20 A
1000
100
10
TJ = 100 °C
1
0.1
- Reverse Current (mA)
R
0.01
I
0.001
0
TJ = 150 °C
Vishay Semiconductors
TJ = 125 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
3020 40
50
60
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Document Number: 94229 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Oct-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
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