Vishay VS-45L(R) Series, VS-150K(R) Series, VS-150KS(R) Series Data Sheet

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DO-205AA (DO-8)

Standard Recovery Diodes

PRODUCT SUMMARY

I

F(AV)

Package DO-205AA (DO-8)

Circuit configuration Single diode

VS-45L(R), VS-150K(R), VS-150KS(R) Series

Vishay Semiconductors

(Stud Version), 150 A

FEATURES

• Alloy diode

• High current carrying capability

• High surge current capabilities

• Stud cathode and stud anode version

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance

150 A

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Battery chargers

• Welders

• Machine tool controls

• High power drives

• Medium traction applications

• Freewheeling diodes

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

C

50 Hz 3570

60 Hz 3740

50 Hz 64

60 Hz 58

Range 100 to 600 V

150 A

150 °C

235 A

-40 to 200 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-45L(R)
VS-150K(R)
VS-150KS(R)

, MAXIMUM REPETITIVE

V

VOLTAGE

CODE

10 100 200

20 200 300

30 300 400

40 400 500

60 600 720

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

A

kA2s

MAXIMUM

RRM

AT T

= 175 °C

J

mA

35




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VS-45L(R), VS-150K(R), VS-150KS(R) Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 
at case temperature

Maximum RMS forward current I

Maximum peak, one cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 640 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of forward

slope resistance
High level value of forward

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

DC at 142 °C case temperature 235

t = 10 ms

t = 8.3 ms 3740

t = 10 ms

t = 8.3 ms 3140

t = 10 ms

t = 8.3 ms 58

t = 10 ms

t = 8.3 ms 41

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

(I >  x I

No voltage 
reapplied

100 % V
reapplied

No voltage 



RRM

Sinusoidal half wave,
initial T

reapplied

100 % V
reapplied

< I <  x I

F(AV)

), TJ = TJ maximum 0.83

F(AV)

< I <  x I

F(AV)

), TJ = TJ maximum 0.91

F(AV)



RRM

), TJ = TJ maximum 0.67

F(AV)

), TJ = TJ maximum 1.42

F(AV)

Ipk = 471 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.33 V

Vishay Semiconductors

150 A

150 °C

3570

3000

= TJ maximum

J

64

45

A

kA2s

V

mW

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
and storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

minimum

Mounting torque
45L

maximum 17.0 (150)

minimum

maximum 15.0 (132)

minimum

Mounting torque
150K
150KS

maximum 14.1 (125)

minimum

maximum 12.5 (110)

Approximate weight

Case style

150K-A DO-205AA (DO-8)

150KS B-42

45L

T

, T

J

Stg

R

thJC

DC operation 0.25

-40 to 200 °C

K/W

R

thCS

Mounting surface, smooth, flat and greased 0.10

Not lubricated threads

14.1 (125)

N · m

Lubricated threads

Not lubricated threads

12.2 (108)

11.3 (100)

(lbf · in)

N · m

Lubricated threads

9.5 (85)

(lbf · in)

100 g

3.5 oz.

DO-205AC (DO-30)

See dimensions - link at the end of datasheet

Revision: 25-Nov-13

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140

150

160

170

180

190

200

0 50 100 150 200 250

DC

30°

60°

90°

120°

180°

Maximum Allowable Case Temp erature (°C)

Conduction Period

Average Forward Current (A)

45L..., 150... Serie s
R ( DC) = 0.25 K/W

thJC

25 50 75 100 125 150 175 200

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

1

K

/

W

­D

e

l

t

a

R

0

.
2

K

/

W

0.6
K

/

W

0

.

8

K

/

W

1

.

5

K

/

W

2

K

/

W

3

K

/

W

1

K

/

W

0

.

4

K

/

W

0

.

3

K

/

W

t
h

SA

160

0

20

40

60

80

100

120

140

160

180

0

40 80 120

RM S Lim it

180°
120°

90°
60°
30°

Cond uction Angle

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

45L..., 150... Series
T = 200°C

J

VS-45L(R), VS-150K(R), VS-150KS(R) Series

Vishay Semiconductors

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.031 0.023

120° 0.038 0.040

90° 0.048 0.053

= TJ maximum K/W

T

J

60° 0.071 0.075

30° 0.120 0.121

Note

• The table above shows the increment of thermal resistance R

200

190

180

170

160

150

140

Maximum Allowable Case Temperature (°C)

0 20406080100120140160

45L...,150... Series
R ( DC) = 0.25 K/W

thJC

Conduction Angle

30°

60°

90°

Average Forward Current (A)

120°

180°

when devices operate at different conduction angles than DC

thJC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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Fig. 3 - Forward Power Loss Characteristics

3

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25 50 75 100 125 150 175 200

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

1

K

/

W

­D

el

t

a

R

0

.

3

K

/

W

t

h

S

A

3

K

/

W

2

K

/

W

1

.

5

K

/

W

1

K

/

W

0

.

8

K

/

W

0

.

6

K

/

W

0

.

4

K

/

W

0

.
2

K

/

W

250

0

50

100

150

200

250

050100150200

DC
180°
120°

90°
60°
30°

RM S Li m it

Cond uction Period

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

45L..., 150... Serie s
T = 200°C

J

VS-45L(R), VS-150K(R), VS-150KS(R) Series

Vishay Semiconductors

Fig. 4 - Forward Power Loss Characteristics

3500

At A ny Ra te d Loa d C o nd itio n A nd With

Ra ted V A pp lied Follo wing Su rge .

RRM

3000

2500

Init ial T = 200°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

4000

Maximum Non Repetitive Surge Current

3500

3000

Ver sus Pu lse Tra in Du ra tion.

No Voltage Reapplied
Rated V Reapplied

Init ia l T = 200°C

J

RRM

2500

2000

2000

1500

1000

45L..., 150... Series

Peak Half Sine Wave Forward Current (A)

500

110100

Number Of Eq ual Amplitude Ha lf Cycle Current Pulses (N)

1500

1000

45L..., 150. .. Serie s

Pe a k Ha lf Sine Wave Forwa rd Curre nt (A)

500

0.01 0.1 1

Pulse Tr a in D u r a t io n (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

1000

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T = 25 ° C

100

Instantaneous Forward Current (A)

10

00.511.522.533.544.5

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

J

T = 200°C

J

45L...,150.. . Se ries

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0.01

0.1

1

0.001 0.01 0.1 1 10

Sq ua re Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

Steady State Value

R = 0.25 K7W

(DC Operation)

45L..., 150... Series

thJC

Device code

2 51 3 4

15 0 K R 60 A

6 7

2

- 15 = Essential part number

1

- Vishay Semiconductors product

3

- 0 = Standard device

4

- Case style:
K = DO-205AA (DO-8)
KS = B-42

5

- R = Stud reverse polarity (anode to stud)
None = Stud normal polarity (cathode to stud)

6

- Voltage code x 10 = V

RRM

(see Voltage Ratings table)

7

-

A = Essential part number for 150K (omitted for 150KS)

Note: For metric device M12 x 1.75 contact factory

VS-

Device code

21 3 4 5

45 L R 60

1

- 45 = Standard version

- Vishay Semiconductors product

2

- L = Essential part number

3

4

- R = Stud reverse polarity (anode to stud)
None = Stud normal polarity (cathode to stud)

5

- Voltage code x 10 = V

RRM

(see Voltage Ratings table)

VS-

VS-45L(R), VS-150K(R), VS-150KS(R) Series

Vishay Semiconductors

Fig. 8 - Thermal Impedance Z

ORDERING INFORMATION TABLES

Characteristics

thJC

Dimensions www.vishay.com/doc?95314

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LINKS TO RELATED DOCUMENTS

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Document Number: 93489

15.30 (0.60) MAX.

8.30 (0.327)

7.55 (0.297)

Ø 7.39 (0.297)
Ø 6.89 (0.271)

10.41 (0.410)

8.90 (0.350)

Ø 23.30 (0.92) MAX.

17 (0.69) MAX.

1/2"-20UNF-2A

27.00 (1.06) MAX.

Across flats

7.88 (0.310)

7.36 (0.290)

137.67 (5.42)

132.58 (5.22)

23.30 (0.917)
MAX.

Outline Dimensions

Vishay Semiconductors

DO-205AC (DO-30), DO-205AA (DO-8)

and B-42 for 45L(R), 150K(R) and 150KS(R) Series

DIMENSIONS FOR 45L(R) SERIES - DO-205AC (DO-30) in millimeters (inches)

Document Number: 95314 For technical questions, contact: [e-mail]
Revision: 22-Jul-08 1

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Outline Dimensions

Vishay Semiconductors

DO-205AC (DO-30), DO-205AA (DO-8)

and B-42 for 45L(R), 150K(R) and 150KS(R) Series

DIMENSIONS FOR 150K(R) SERIES - DO-205AA (DO-8) in millimeters (inches)

15.30 (0.60) MAX.

Ø 7.39 (0.297)
Ø 6.89 (0.271)

10.41 (0.410)

8.90 (0.350)

Ø 23.30 (0.92) MAX.

117.47 (4.625)

111.13 (4.375)

Note

(1)

For metric device M12 x 1.75 contact factory

23.30 (0.917)
MAX.

17 (0.69)

MAX.

3/8"-24UNF-2A

7.88 (0.310)

7.36 (0.290)

27.00 (1.06) MAX.

Across flats

(1)

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Document Number: 95314

2.03 (0.080)

1.27 (0.050)

4.08 (0.161)

3.70 (0.146)

9.50 (0.374)

7.50 (0.295)

18.00 (0.708)

14.00 (0.551)

6.76 (0.266)

6.25 (0.246)

3/8"-24UNF-2A

12.50 (0.492)

11.70 (0.460)

Ø 4.34 (0.171)
Ø 4.09 (0.161)

10.2 (0.401)

9.2 (0.362)

21.47 (0.843)

21.20 (0.835)

37.13 (1.462)

33.83 (1.332)

27.17 (1.070)

26.22 (1.032)

Outline Dimensions

DO-205AC (DO-30), DO-205AA (DO-8)

and B-42 for 45L(R), 150K(R) and 150KS(R) Series

DIMENSIONS FOR 150KS(R) SERIES - B-42 in millimeters (inches)

Vishay Semiconductors

Document Number: 95314 For technical questions, contact: [e-mail]
Revision: 22-Jul-08 3

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