Vishay VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF Data Sheet
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
MT...PA MT...PB
www.vishay.com
Three Phase Bridge (Power Modules), 45 A to 100 A
PRODUCT SUMMARY
I
O
V
RRM
Package MT...PA, MT...PB
Circuit Three phase bridge
45 A to 100 A
1600 V
Vishay Semiconductors
FEATURES
•Low V
• Low profile package
• Direct mounting to heatsink
• Flat pin/round pin versions with PCB solderable
• Low junction to case thermal resistance
• 3500 V
• UL approved file E78996 vie
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
APPLICATIONS
• Power conversion machines
•Welding
•UPS
•SMPS
• Motor drives
• General purpose and heavy duty application
DESCRIPTION
A range of extremely compact three-phase rectifier bridges
offering efficient and reliable operation. The low profile
package has been specifically conceived to maximize space
saving and optimize the electrical layout of the application
specific power supplies.
F
terminals
insulation voltage
RMS
please see www.vishay.com/doc?99912
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS
I
O
I
FSM
2
t
I
2
√t 3650 7240 10 130 A2√s
I
V
RRM
T
Stg
T
J
T
C
50 Hz 270 380 450
60 Hz 280 398 470
50 Hz 365 724 1013
60 Hz 325 660 920
Range
VALUES
40MT
45 75 100 A
100 80 80 °C
VALUES
70MT
1600 V
-40 to 125
-40 to 150
VALUES
100MT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
TYPE NUMBER
VS-40MT160P, VS-70MT160P,
VS-100MT160P
Revision: 16-Jul-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VOLTAGE CODE
REVERSE VOLTAGE
V
160 1600 1700 5
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
V
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
V
UNITS
A
A2s
°C
I
MAXIMUM AT
RRM
T
= 150 °C
J
mA
Document Number: 94538
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum DC output
current at case
temperature
Maximum peak, one cycle
forward, non-repetitive on
state surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 3650 7240 10 130 A2√s
Value of threshold voltage V
Slope resistance r
Maximum forward voltage
drop
I
I
FSM
F(TO)
V
120° rect. to conduction angle
O
t = 10 ms
t = 8.3 ms 280 398 470
t = 10 ms
t = 8.3 ms 240 335 400
t = 10 ms
t = 8.3 ms 325 660 920
t = 10 ms
t = 8.3 ms 240 467 665
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
Initial
T
= TJ maximum
J
TJ maximum
t
TJ = 25 °C; tp = 400 μs single junction
FM
(40MT, I
= 40 A ) (70M T, Ipk = 70 A) (100MT, Ipk = 100 A)
pk
Vishay Semiconductors
VALUES
40MT
0.78 0.82 0.75 V
14.8 9.5 8.1 mΩ
1.45 1.45 1.51 V
VALUES
70MT
VALUES
100MT
UNITS
45 75 100 A
100 80 80 °C
270 380 450
225 320 380
365 724 1013
253 512 600
A2s
Α
INSULATION TABLE
PARAMETER SYMBOL TEST CONDITIONS 40MT 70MT 100MT UNITS
RMS insulation voltage V
INS
TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s 3500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 40MT 70MT 100MT UNITS
Maximum junction operating
temperature range
Maximum storage
temperature range
T
J
T
Stg
- 40 to 150
°C
- 40 to 125
DC operation per module 0.27 0.23 0.19
Maximum thermal resistance,
junction to case
Maximum thermal resistance,case to
heatsink per module
R
R
thJC
thCS
Mounting torque to heatsink
± 10 %
Approximate weight 65 g
DC operation per junction 1.6 1.38 1.14
120° rect. condunction angle per module 0.38 0.29 0.22
120° rect. condunction angle per junction 2.25 1.76 1.29
Mounting surface smooth, flat and greased
Heatsink compound thermal conduct i v i t y
0.1
= 0.42 W/mK
A mounting compound is recommended
and the torque should be rechecked after a
4Nm
period of 3 hours to allow for the spread of
the compound. Lubricated threads
K/W
CLEARANCE AND CREEPAGE DISTANCES
PARAMETER TEST CONDITIONS MT...PA MT...PB UNITS
Clearance
Creepage distance
External shortest distances in air between terminals
which are not internally short circuited together
Shortest distance along external surface of the insulating material
between terminals which are not internally short circuited together
10.9 12.3 mm
Revision: 16-Jul-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94538
Total Output Current (A)
Maximum Allowable Case Temperature (°C)
80
90
100
110
120
130
140
150
160
0 1020304050
120˚
(Rect)
40MT...P
R (DC) = 0.27 K/W
Per Module
thJC
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
1
10
100
1000
0123456
Tj = 150˚C
Tj = 25˚C
40MT...P
Maximum Allowable Ambient Temperature (°C)Total Output Current (A)
Maximum Total Power Loss (W)
30 60 90 120 150
RthSA = 0.1 K/W - Delta R
0.3 K/W
0.4 K/W
0.5 K/W
1 K/W
0.2 K/W
0
50
100
150
200
250
0 102030405060
120˚
(Rect)
Tj = 150˚C
40MT...P
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com
250
200
150
100
Peak Half Sine Wave On-state Current (A)
50
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Vishay Semiconductors
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
40MT...P
Per Junction
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig. 1 - Current Rating Characteristics
Fig. 2 - On-State Voltage Drop Chracteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
300
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
250
200
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
150
100
40MT...P
Per Junction
Peak Half Sine Wave On-state Current (A)
50
0.01 0.1 1
Pulse Train Duration(s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Revision: 16-Jul-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94538
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