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VS-40HFL Series
Data Sheet
13 pgs154.82 Kb0

Vishay VS-40HFL Series, VS-70HFL Series, VS-85HFL Series Data Sheet

www.vishay.com
DO-203AB (DO-5)
(Stud Version), 40 A, 70 A, 85 A
PRODUCT SUMMARY
I
F(AV)
Package DO-203AB (DO-5)
Circuit configuration Single diode
40 A, 70 A, 85 A
VS-40HFL, VS-70HFL, VS-85HFL Series
Fast Recovery Diodes
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Stud cathode and stud anode versions
• Types up to 100 V
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
•Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
Vishay Semiconductors
RRM
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS 40HFL 70HFL 85HFL UNITS
I
F(AV)
I
FSM
2
I
t
2
I
t 11 300 34 650 85 560 I2s
V
RRM
t
rr
T
J
T
maximum 85 85 85 °C
C
50 Hz 400 700 1100
60 Hz 420 730 1151
50 Hz 800 2450 6050
60 Hz 730 2240 5523
Range 100 to 1000 100 to 1000 100 to 1000 V
Characteristics table
Range -40 to 125 -40 to 125 -40 to 125 °C
40 70 85 A
See Recovery
See Recovery
Characteristics table
See Recovery
Characteristics table
A
A2s
ns
Revision: 22-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93150
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
TYPE NUMBER
(1)
PEAK REPETITIVE
REVERSE VOLTAGE
T
= - 40 °C TO 125 °C
J
V
VS-40HFL10S02, VS-40HFL10S05 100 150
VS-40HFL20S02, VS-40HFL20S05 200 300
VS-40HFL40S02, VS-40HFL40S05 400 500
VS-40HFL60S02, VS-40HFL60S05 600 700
VS-40HFL80S05 800 900
VS-40HFL100S05 1000 1100
VS-70HFL10S02, VS-70HFL10S05 100 150
VS-70HFL20S02, VS-70HFL20S05 200 300
VS-70HFL40S02, VS-70HFL40S05 400 500
VS-70HFL60S02, VS-70HFL60S05 600 700
VS-70HFL80S05 800 900
VS-70HFL100S05 1000 1100
VS-85HFL10S02, VS-85HFL10S05 100 150
VS-85HFL20S02, VS-85HFL20S05 200 300
VS-85HFL40S02, VS-85HFL40S05 400 500
VS-85HFL60S02, VS-85HFL60S05 600 700
VS-85HFL80S05 800 900
VS-85HFL100S05 1000 1100
Note
(1)
Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.
V
, MAXIMUM PEAK
RSM
NON-REPETITIVE REVERSE VOLTAGE T
= 25 °C TO 125 °C
J
V
Vishay Semiconductors
I
, MAXIMUM PEAK REVERSE
FM
CURRENT AT RATED V
mA
= 25 °C TJ = 125 °C
T
J
0.1 10
0.1 15
0.1 20
RRM
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 40HFL 70HFL 85HFL UNITS
Maximum average forward current at maximum case temperature
Maximum RMS forward current I
Maximum peak repetitive forward current I
Maximum peak, one-cycle non-repetitive forward current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing
(1)
Maximum value of threshold voltage V
Maximum value of forward slope resistance r
Maximum forward voltage drop V
Note
(1)I2
t for time tx = I2t x t
x
I
F(AV)
F(RMS)
FRM
I
FSM
180° conduction, half sine wave
Sinusoidal half wave, 30° conduction 220 380 470 A
t = 10 ms
t = 8.3 ms 420 730 1151
t = 10 ms
t = 8.3 ms 500 870 1369
t = 10 ms
t = 8.3 ms 730 2240 5523
t = 10 ms
t = 8.3 ms 1030 3160 7810
Sinusoidal half wave, 100 % V
reapplied,
RRM
initial T
= TJ maximum
J
Sinusoidal half wave, no voltage reapplied, initial T
= TJ maximum
J
100 % V initial T
reapplied,
RRM
= TJ maximum
J
No voltage reapplied, initial T
= TJ maximum
J
I2t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 650 85 560 A2s
F(TO)
TJ = 125 °C
F
TJ = 25 °C, IFM = x I
FM
F(AV)
40 70 85 A
75 °C
63 110 134 A
400 700 1100
475 830 1308
800 2450 6050
1130 3460 8556
1.081 1.085 1.128 V
6.33 3.40 2.11 m
1.95 1.85 1.75 V
A
2
s
A
Revision: 22-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
Document Number: 93150
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS
TJ = 25 °C, IF = 1 A to VR = 30 V, dI
/dt = 100 A/μs
Typical reverse recovery time t
rr
F
= 25 °C, - dIF/dt = 25 A/μs,
T
J
I
= x rated I
FM
F(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V, dI
/dt = 100 A/μs
Typical reverse recovered charge Q
rr
F
= 25 °C, - dIF/dt = 25 A/μs,
T
J
I
= x rated I
FM
F(AV)
40HFL... 70HFL... 85HFL...
S02S05S02S05S02S05
70 180 60 150 50 120
200 500 200 500 200 500
160 750 90 500 70 340
240 1300 240 1300 240 1300
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 40HFL 70HFL 85HFL UNITS
Junction operating temperature range T
Storage temperature range T Maximum thermal resistance,
junction to case Maximum thermal resistance,
case to heatsink
Maximum allowable mounting torque (+ 0 %, - 10 %)
Approximate weight
Case style JEDEC DO-203AB (DO-5)
Notes
(1)
Recommended for pass-through holes
(2)
Recommended for holed threaded heatsinks
R
R
J
Stg
thJC
thCS
DC operation 0.60 0.36 0.30
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
Lubricated thread, tighting on nut
(1)
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
Vishay Semiconductors
- 40 to 125
- 40 to 150
0.25
(1)
(2)
(2)
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
25
0.88
UNITS
(lbf · in)
ns
nC
°C
K/W
N · m
I
F
dI
F
I
t
t
IF, IFM - Peak forward current prior to commulation
/dt - Rate of fail forward current
-dI
F
(REC) - Peak reverse recovery current
I
RRM
- Reverse recovery time
t
rr
- Reverse recovered charge
Q
rr
FM
V
I
R
RRM (REC)
I
RRM (REC)
dt
t
rr
Q
rr
Fig. 1 - Reverse Recovery Time Test Waveform
Revision: 22-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 93150
www.vishay.com
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Maximum Average Forward Power Loss (W)
Ø = 180 °
120 °
90 ° 60 ° 30 °
0
15 205010 253035 304040 20 50 60 7010 9080 100
10
20
30
40
50
60
70
Ø
Conduction Angle
RMS limit
TJ = 125 °C
40HFL...
R
thSA
= 0.3 - ΔR K/W
0.5 - ΔR
0.7 - ΔR
1.0 - ΔR
1.5 - ΔR
2.0 - ΔR
3 - ΔR
4 - ΔR
5 - ΔR
RMS limit
TJ = 25 °C
40HFL...
R
thSA
= 0.3 - ΔR K/W
0.5 - ΔR
Ø = DC
180° 120°
60°
Conduction Angle
Ø
0.7 - ΔR
1.0 - ΔR
1.5 - ΔR
2.0- ΔR
3 - ΔR
4 - ΔR
30 4010020 5060 304070 20 50 60 7010 9080 100
0
10
20
30
40
50
60
100
90
80
70
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Maximum Average Forward Power Loss (W)
RMS limit
TJ = 125 °C
70HFL...
R
thSA
= 0.3 - ΔR K/W
0.5 - ΔR
Ø = 180°
120°
90° 60° 30°
Ø
Conduction Angle
0.7 - ΔR
1.0 - ΔR
1.5 - ΔR
2.0 - ΔR
3 - ΔR
4 -
ΔR
30 4010020 5060 304070 20 50 60 7010 9080 100
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
0
20
40
60
100
120
80
Maximum Average Forward Power Loss (W)
Fig. 2 - Current Rating Nomogram (Sinusoidal Waveforms), 40HFL Series
VS-40HFL, VS-70HFL, VS-85HFL Series
Vishay Semiconductors
Revision: 22-Jan-14
Fig. 3 - Current Rating Nomogram (Rectangular Waveforms), 40HFL Series
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 70HFL Series
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 93150
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