Vishay VS-40CTQ150SPbF, VS-40CTQ150-1PbF Data Sheet
D2PAK TO-262
V
S-40CTQ150SPbFVS-40CTQ150-1PbF
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
FEATURES
• AEC-Q101 qualified
• Very low forward voltage drop
• Halogen-free according to IEC 61249-2-21
definition
• 175 °C T
• Center tap TO-220 package
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
operation
J
Vishay Semiconductors
PRODUCT SUMMARY
Package TO-262AA, TO-263AB (D2PAK)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 175 °C
J
Diode variation Common cathode
E
AS
15 mA at 125 °C
2 x 20 A
150 V
0.71 V
1 mJ
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 40 A
150 V
tp = 5 μs sine 1500 A
20 Apk, TJ = 125 °C (per leg) 0.71 V
- 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
VS-40CTQ150SPbF
VS-40CTQ150-1PbF
150 V
UNITS
Document Number: 94215 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
per leg
forward current
See fig. 5
per device 40
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 140 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse 250
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH 1.0 mJ
AS
V
RRM
applied
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
20
1500
1.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
40 A 1.16
(1)
20 A
40 A 0.85
Maximum reverse leakage current per leg
See fig. 2
I
RM
Maximum junction capacitance per leg C
Typical series inductance per leg L
TJ = 25 °C
(1)
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 450 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
= 125 °C 15 mA
R
R
R
0.93
0.71
50 μA
10 000 V/μs
A
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Marking device
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94215
2 DiodesAmericas@vishay.com
, T
T
J
Stg
DC operation
See fig. 4
R
thJC
DC operation 0.75
R
thCS
Mounting surface, smooth and greased 0.5
- 55 to 175 °C
1.5
°C/W
2g
0.07 oz.
Non-lubricated threads
2
Case style D
PAK 40CTQ150S
6 (5)
kgf cm
(lbf in)
Case style TO-262 40CTQ150-1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-Jan-11
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.8 1.2 1.60
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
40 80
160
120
0
TJ = 25 °C
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
1000
100
10
1
0.1
- Reverse Current (mA)
R
0.01
I
0.001
0
Vishay Semiconductors
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
4020 60 80
V
- Reverse Voltage (V)
R
100 120 140
160
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10
1
0.1
- Thermal Impedance (°C/W)
Document Number: 94215 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Jan-11 DiodesAmericas@vishay.com
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
D = 0.75
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
+ T
C
100 10
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