Vishay VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 Data Sheet

VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3

www.vishay.com	Vishay Semiconductors

Schottky Rectifier, 3.3 A

Cathode	Anode
C-16

PRODUCT SUMMARY

Package	DO-201AD (C-16)
IF(AV)	3.3 A
VR	30 V, 40 V
VF at IF	See Electrical table
IRM max.	20 mA at 125 °C
TJ max.	150 °C
Diode variation	Single die
EAS	6.0 mJ

FEATURES

•Low profile, axial leaded outline

•High frequency operation

•Very low forward voltage drop

• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

•Guard ring for enhanced ruggedness and long term reliability

•Compliant to RoHS Directive 2002/95/EC

•Designed and qualified for commercial level

•Halogen-free according to IEC 61249-2-21 definition (-M3 only)

DESCRIPTION

The VS-31DQ... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

IF(AV)

Rectangular waveform

3.3

A

VRRM

30/40

V

IFSM

tp = 5 μs sine

450

A

VF

3 Apk, TJ = 25 °C

0.57

V

TJ

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-31DQ03

VS-31DQ03-M3

VS-31DQ04

VS-31DQ04-M3

UNITS

Maximum DC reverse voltage

VR

30

30

40

40

V

Maximum working peak reverse voltage

VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

IF(AV)

50 % duty cycle at TL = 117 °C, rectangular waveform

3.3

See fig. 4

A

Maximum peak one cycle

IFSM

5 µs sine or 3 µs rect. pulse

Following any rated load

450

non-repetitive surge current

condition and with rated

See fig. 6

10 ms sine or 6 ms rect. pulse

VRRM applied

90

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 1.0 A, L = 12 mH

6.0

mJ

Repetitive avalanche current

IAR

Current decaying linearly to zero in 1 μs

1.0

A

Frequency limited by TJ maximum VA = 1.5 x VR typical

Revision: 20-Sep-11

1

Document Number: 93319

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3

		www.vishay.com				Vishay Semiconductors
	ELECTRICAL SPECIFICATIONS
	PARAMETER			SYMBOL	TEST CONDITIONS		VALUES		UNITS
					3 A	TJ = 25 °C	0.57
	Maximum forward voltage drop			VFM (1)	6 A		0.71		V
	See fig. 1				3 A	TJ = 125 °C	0.51
					6 A		0.62
	Maximum reverse leakage current			IRM (1)	TJ = 25 °C	VR = Rated VR	1		mA
	See fig. 4				TJ = 125 °C		20
	Typical junction capacitance			CT	VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		190		pF
	Typical series inductance			LS	Measured lead to lead 5 mm from package body		9.0		nH
	Maximum voltage rate of charge			dV/dt	Rated VR		10 000		V/µs
Note
(1)	Pulse width < 300 μs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER			SYMBOL	TEST CONDITIONS		VALUES		UNITS
	Maximum junction and storage			TJ (1), TStg			- 40 to 150		°C
	temperature range
	Maximum thermal resistance,			RthJA	DC operation		80
	junction to ambient				Without cooling fin
									°C/W
	Typical thermal resistance,			RthJL	With fin 20 mm x 20 mm (0.79" x 0.79")		15
	junction to lead				1.0 mm (0.04") thickness
	Approximate weight						1.2		g
							0.042		oz.
	Marking device				Case style C-16		31DQ03
							31DQ04
Note
(1)	dPtot	1
	------------- < -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA

Revision: 20-Sep-11

2

Document Number: 93319

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000