Vishay VS-30WQ03FNPbF Data Sheet
D-PAK (TO-252AA)
Schottky Rectifier, 3.5 A
VS-30WQ03FNPbF
Vishay Semiconductors
Base
cathode
4, 2
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
1
Anode
3
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 150 °C
J
Diode variation Single die
E
AS
3.5 A
30 V
See Electrical table
50 mA at 125 °C
8 mJ
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-30WQ03FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 3.5 A
30 V
tp = 5 μs sine 535 A
3 Apk, TJ = 125 °C 0.35 V
Range - 40 to 150 °C
Document Number: 94197 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30WQ03FNPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 134 °C, rectangular waveform 3.5
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 90
TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
535
1.0 A
A
VS-30WQ03FNPbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 3.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward voltage drop
See fig. 1
V
FM
6 A 0.52
(1)
3 A
6 A 0.46
Maximum reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
T
S
TJ = 25 °C
(1)
T
= 125 °C 50
J
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 290 pF
Measured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.45
0.35
2
0.22 V
32.86 m
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA) 30WQ03FN
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
, T
T
J
Stg
R
thJC
DC operation
See fig. 4
- 40 to 150 °C
4.7 °C/W
0.3 g
0.01 oz.
V
mA
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94197
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.2 0.4 0.6
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
VS-30WQ03FNPbF
Schottky Rectifier, 3.5 A
100
10
1
0.1
- Reverse Current (mA)
0.01
R
I
0.001
TJ = 150 °C
Vishay Semiconductors
TJ = 125 °C
T
= 100 °C
J
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
15 20 25 30510
V
- Reverse Voltage (V)
R
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
- Junction Capacitance (pF)
T
C
100
5
10
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
Document Number: 94197 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
TJ = 25 °C
15 20 25 30 350
Characteristics
thJC
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