Vishay VS-30L30CT-1PbF Data Sheet

A
TO-262
Schottky Rectifier, 2 x 15 A
VS-30L30CT-1PbF
Vishay Semiconductors
Base
common
cathode
2
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
1
node Anode
2
Common
cathode
3
encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
PRODUCT SUMMARY
Package TO-262AA
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 150 °C
J
Diode variation Common cathode
E
AS
350 mA at 125 °C
2 x 15 A
30 V
0.37 V
15 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
V
T
RRM
F
J
Rectangular waveform 30 A
30
15 Apk, TJ = 125 °C (per leg) 0.37
Range - 55 to 150 °C
V
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30L30CT-1PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Maximum peak one cycle non-repetitive surge current
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
Document Number: 94196 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 05-Oct-10 DiodesAmericas@vishay.com
per device
per leg 15
I
F(AV)
I
FSM
50 % duty cycle at TC = 140 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 220
TJ = 25 °C, IAS = 2 A, L = 7.5 mH 15 mJ
AS
AR
Current decaying linearly to zero in 1 μs Frequency limited by T
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maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
30
1450
2A
A
VS-30L30CT-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
15 A
Maximum forward voltage drop per leg V
FM
(1)
15 A
30 A 0.57
30 A 0.50
Maximum reverse leakage current per leg I
Maximum junction capacitance per leg C
Typical series inductance per leg L
RM
(1)
T
= 125 °C 350
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1500 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
TJ = 25 °C
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.46
0.37
1.50
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per package
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-262 30L30CT-1
T
, T
J
Stg
DC operation
R
thJC
- 55 to 150 °C
1.5
0.8
2g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94196 2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 05-Oct-10
1
10
100
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.6 1.2
1.6
1.4
0.80.4
0
1.0
TJ = 150 °C T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
100
10
1
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
515
30
2010
0
25
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.20
D = 0.25
D = 0.33
D = 0.50
VS-30L30CT-1PbF
Schottky Rectifier, 2 x 15 A
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
TJ = 25 °C
1000
- Junction Capacitance (pF)
T
C
100
515 30
0
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94196 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 05-Oct-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
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25
2010
thJC
35
Characteristics
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