Datasheet VS-30L30CT-1PbF DataSheet (Vishay)

A

TO-262

Schottky Rectifier, 2 x 15 A

VS-30L30CT-1PbF

Vishay Semiconductors

Base

common

cathode

2

FEATURES

• 150 °C TJ operation

• Center tap configuration

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

1

node Anode

2

Common

cathode

3

encapsulation for enhanced mechanical strength
and moisture resistance

• Guard ring for enhanced ruggedness and long
term reliability

PRODUCT SUMMARY

Package TO-262AA

I

F(AV)

V

R

V

at I

F

F

I

RM

T

max. 150 °C

J

Diode variation Common cathode

E

AS

350 mA at 125 °C

2 x 15 A

30 V

0.37 V

15 mJ

• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C

• Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION

This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

V

T

RRM

F

J

Rectangular waveform 30 A

30

15 Apk, TJ = 125 °C (per leg) 0.37

Range - 55 to 150 °C

V

VOLTAGE RATINGS

PARAMETER SYMBOL VS-30L30CT-1PbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

30 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average
forward current

Maximum peak one cycle non-repetitive
surge current

Non-repetitive avalanche energy per leg E

Repetitive avalanche current per leg I

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Revision: 05-Oct-10 [e-mail]

per device

per leg 15

I

F(AV)

I

FSM

50 % duty cycle at TC = 140 °C, rectangular waveform

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse 220

TJ = 25 °C, IAS = 2 A, L = 7.5 mH 15 mJ

AS

AR

Current decaying linearly to zero in 1 μs
Frequency limited by T

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maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

30

1450

2A

A

VS-30L30CT-1PbF

Vishay Semiconductors

Schottky Rectifier, 2 x 15 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

15 A

Maximum forward voltage drop per leg V

FM

(1)

15 A

30 A 0.57

30 A 0.50

Maximum reverse leakage current per leg I

Maximum junction capacitance per leg C

Typical series inductance per leg L

RM

(1)

T

= 125 °C 350

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1500 pF

T

Measured lead to lead 5 mm from package body 8.0 nH

S

TJ = 25 °C

Maximum voltage rate of change dV/dt Rated V

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

R

R

0.46

0.37

1.50

10 000 V/μs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and
storage temperature range

Maximum thermal resistance,
junction to case per leg

Maximum thermal resistance,
junction to case per package

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-262 30L30CT-1

T

, T

J

Stg

DC operation

R

thJC

- 55 to 150 °C

1.5

0.8

2g

0.07 oz.

kgf · cm

(lbf · in)

V

mA

°C/W

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1

10

100

1000

I

F

- Instantaneous Forward Current (A)

V

FM

- Forward Voltage Drop (V)

0.2 0.6 1.2

1.6

1.4

0.80.4

0

1.0

TJ = 150 °C
T

J

= 125 °C

T

J

= 25 °C

0.01

0.1

100

10

1

1000

I

R

- Reverse Current (mA)

V

R

- Reverse Voltage (V)

515

30

2010

0

25

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

10

Single pulse

(thermal resistance)

D = 0.75

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

D = 0.20

D = 0.25

D = 0.33

D = 0.50

VS-30L30CT-1PbF

Schottky Rectifier, 2 x 15 A

Vishay Semiconductors

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10 000

TJ = 25 °C

1000

- Junction Capacitance (pF)

T

C

100

515 30

0

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Fig. 4 - Maximum Thermal Impedance Z

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25

2010

thJC

35

Characteristics

VS-30L30CT-1PbF

130

135

145

140

150

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

10

25

155

0

20

DC

See note (1)

Square wave (D = 0.50)

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Schottky Rectifier, 2 x 15 A

10 000

At any rated load condition
and with rated V
following surge

RRM

applied

10

RMS limit

8

6

4

2

Average Power Loss (W)

0

0

515

I

- Average Forward Current (A)

F(AV)

Fig. 6 - Forward Power Loss Characteristics

DC

DC = 0.20
DC = 0.25
DC = 0.33
DC = 0.50
DC = 0.75

2010

25

Note

(1)

Formula used: TC = TJ - Pd x R
Pd = Forward power loss = I

thJC

x VFM at (I

F(AV)

1000

- Non-RepetitiveSurge Current (A)

100

FSM

I

10

t

- Square Wave Pulse Duration (µs)

p

100 1000

Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)

;

/D) (see fig. 6)

F(AV)

10 000

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2 - Current rating (30 A)

3

- L = Low V

F

4 - Voltage rating (30 = 30 V)

5 - Circuit configuration: C = Common cathode

Tube standard pack quantity: 50 pieces

6 - T = TO-220

- -1 = TO-262

7

- PbF = Lead (Pb)-free

8

1 - Vishay Semiconductors product

Device code

5

1

32 4 6 7 8

VS- 30 L 30 C T

-1

PbF

VS-30L30CT-1PbF

Schottky Rectifier, 2 x 15 A

Vishay Semiconductors

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95419

Part marking information www.vishay.com/doc?95420

SPICE model www.vishay.com/doc?95287

Document Number: 94196 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 05-Oct-10 [e-mail]

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DIMENSIONS in millimeters and inches

(4)

(4)

Base
metal

Plating

b1, b3

(b, b2)

c1

c

Section B - B and C - C

Scale: None

Section A - A

(3)

E1

(3)D1

E

B

A

A

A

c2

c

A1

Seating

plane

Lead tip

(3)

(2) (3)

(2)

A

E

(Datum A)

L1

L2

B

B

C

C

3

2

1

L

D

2 x e

3 x b2

3 x b

0.010 A B

MM

Modified JEDEC outline TO-262

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

Outline Dimensions

Vishay Semiconductors

TO-262

SYMBOL

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

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Revision: 04-Oct-10 [e-mail]

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

NOTES

A 4.06 4.83 0.160 0.190

A1 2.03 3.02 0.080 0.119

b 0.51 0.99 0.020 0.039

b1 0.51 0.89 0.020 0.035 4

b2 1.14 1.78 0.045 0.070

b3 1.14 1.73 0.045 0.068 4

c 0.38 0.74 0.015 0.029

c1 0.38 0.58 0.015 0.023 4

c2 1.14 1.65 0.045 0.065

D 8.51 9.65 0.335 0.380 2

D1 6.86 8.00 0.270 0.315 3

E 9.65 10.67 0.380 0.420 2, 3

E1 7.90 8.80 0.311 0.346 3

e 2.54 BSC 0.100 BSC

L 13.46 14.10 0.530 0.555

L1 - 1.65 - 0.065 3

L2 3.56 3.71 0.140 0.146

(4)

Dimension b1 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline

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Disclaimer

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