Vishay VS-30ETH06SPbF, VS-30ETH06-1PbF Data Sheet

V

VS-30ETH06SPbF, VS-30ETH06-1PbF

Vishay High Power Products

S-30ETH06SPbF

Base

cathode

2

2

PAK

3

Anode

1
N/C

D

PRODUCT SUMMARY

trr (typical) 28 ns

I

F(AV)

V

R

Hyperfast Rectifier, 30 A FRED Pt

VS-30ETH06-1PbF

2

30 A

600 V

3

Anode

1
N/C

TO-262

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• Low leakage current

• 125 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

®

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

J

RRM

TC = 103 °C 30

TJ = 25 °C 200

Stg

600 V

A

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94020 For technical questions, contact: [e-mail]
Revision: 11-Mar-10 1

,

V

BR

V

R

IR = 100 μA 600 - -

R

IF = 30 A - 2.0 2.6

F

I

= 30 A, TJ = 150 °C - 1.34 1.75

F

VR = VR rated - 0.3 50

T

= 150 °C, VR = VR rated - 60 500

J

VR = 600 V - 33 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

V

μA

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VS-30ETH06SPbF, VS-30ETH06-1PbF

Vishay High Power Products

Hyperfast Rectifier,

30 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

T

= 125 °C - 77 -

J

TJ = 25 °C - 3.5 -

T

= 125 °C - 7.7 -

J

= 30 A

I

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

-31-

TJ = 25 °C - 65 -

T

= 125 °C - 345 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device

T

, T

J

Stg

R

-0.71.1

thJC

R

R

thJA

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth and greased - 0.2 -

- 65 - 175 °C

-2.0- g

-0.07- oz.

Case style D

6.0

(5.0)

2

PAK 30ETH06S

-

Case style TO-262 30ETH06-1

12

(10)

kgf · cm

(lbf · in)

nsT

A

nC

°C/W

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Document Number: 94020

2 Revision: 11-Mar-10

VS-30ETH06SPbF, VS-30ETH06-1PbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0 3.51.5

TJ = 175 °C

= 150 °C

T

J

= 25 °C

T

J

0.5 2 3

1

2.5

VF - Forward Voltage Drop (V)

Hyperfast Rectifier,

30 A FRED Pt

®

1000

100

10

0.1

0.01

- Reverse Current (µA)

R

I

0.001

0.0001

Vishay High Power Products

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

1

100

0 200 400

VR - Reverse Voltage (V)

TJ = 100 °C

TJ = 25 °C

300

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

600500

100

- Junction Capacitance (pF)

T

C

10

0 200 400 500 600

TJ = 25 °C

300100

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

0.1

0.01

- Thermal Impedance (°C/W)

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

.

10

Document Number: 94020 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Mar-10 3

VS-30ETH06SPbF, VS-30ETH06-1PbF

Vishay High Power Products

180

160

140

120

Square wave (D = 0.50)

applied

Rated V

R

100

Allowable Case Temperature (°C)

See note (1)

80

0 5 10 15 20 25

I

- Average Forward Current (A)

F(AV)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

90

80

70

60

50

40

30

20

Average Power Loss (W)

10

0

0

0 1020304045

I

DC

5 152535

- Average Forward Current (A)

F(AV)

Fig. 6 - Forward Power Loss Characteristics

DC

30 35 40 45

RMS limit

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

Hyperfast Rectifier,

30 A FRED Pt

®

90

80

70

60

50

(ns)

rr

40

t

30

20

10

0

100 1000

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

1200

1000

800

600

(nC)

rr

Q

400

200

0

100 1000

IF = 30 A

= 15 A

I

F

VR = 200 V

= 125 °C

T

J

= 25 °C

T

J

dIF/dt (A/µs)

VR = 200 V

= 125 °C

T

J

= 25 °C

T

J

IF = 30 A

= 15 A

I

F

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

R

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Document Number: 94020

4 Revision: 11-Mar-10