Vishay VS-30CTH02SPbF, VS-30CTH02-1PbF Data Sheet

VS-30CTH02SPbF, VS-30CTH02-1PbF

Vishay High Power Products

Hyperfast Rectifier, 2 x 15 A FRED Pt

VS-30CTH02SPbF

Base

Common

Cathode

2

2

Common

Cathode

1

Anode

D

PRODUCT SUMMARY

trr (maximum) 30 ns

I

F(AV)

V

2

PAK

R

3

Anode

VS-30CTH02-1PbF

Base

Common

Cathode

2

2

Common

1

Anode

Cathode

TO-262

Anode

2 x 15 A

200 V

3

®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION/APPLICATIONS

Vishay HPP’s 200 V series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life
time control, guarantee the best overall
performance, ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current

Non-repetitive peak surge current I

Operating junction and storage temperatures T

per diode

RRM

I

F(AV)

FSM

, T

J

TC = 159 °C 15

TC = 25 °C 200

Stg

200 V

Aper device 30

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94015 For technical questions, contact: [e-mail]
Revision: 11-Mar-10 1

,

V

BR

V

R

IR = 100 μA 200 - - V

R

IF = 15 A - 0.92 1.05

F

I

= 15 A, TJ = 125 °C - 0.78 0.85

F

VR = VR rated - - 10

T

= 125 °C, VR = VR rated - 5 300

J

VR = 200 V - 57 - pF

T

Measured lead to lead 5 mm from package body - 8 - nH

S

V

μA

www.vishay.com

VS-30CTH02SPbF, VS-30CTH02-1PbF

Vishay High Power Products

Hyperfast Rectifier,

2 x 15 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 35

= 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30

I

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

F

T

= 25 °C

J

= 125 °C - 40 -

T

J

TJ = 25 °C - 2.8 -

T

= 125 °C - 6.0 -

J

TJ = 25 °C - 37 -

T

= 125 °C - 120 -

J

I

= 15 A

F

/dt = 200 A/μs

dI

F

V

= 160 V

R

-26-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Thermal resistance, junction to case per diode R

Weight

Mounting torque

Marking device

J

, T

thJC

Stg

- 65 - 175 °C

--1.1°C/W

-2.0- g

-0.07- oz.

6.0

(5.0)

Case style D

Case style TO-262 30CTH02-1

-

2

PAK 30CTH02S

12

(10)

kgf · cm

(lbf · in)

ns

A

nC

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2 Revision: 11-Mar-10

Document Number: 94015

VS-30CTH02SPbF, VS-30CTH02-1PbF

100

10

Current (A)

- Instantaneous Forward

F

I

1

0.4 0.6 0.8 1.0 1.2 1.4 1.6

VFM - Forward Voltage Drop (V)

TJ = 175 °C

= 125 °C

T

J

= 25 °C

T

J

Hyperfast Rectifier,
2 x 15 A FRED Pt

®

100

10

0.1

0.01

- Reverse Current (µA)

R

0.001

I

0.0001

Vishay High Power Products

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

1

0 100 200

50

VR - Reverse Voltage (V)

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

150

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

100

- Junction Capacitance (pF)

T

C

10

0 50 100 150 200

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

D = 0.50

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal resistance)

D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

Characteristics

thJC

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

.

110

Document Number: 94015 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Mar-10 3

VS-30CTH02SPbF, VS-30CTH02-1PbF

Vishay High Power Products

180

170

DC

160

Square wave (D = 0.50)

150

Rated V

applied

R

Allowable Case Temperature (°C)

See note (1)

140

05 25201510

I

- Average Forward Current (A)

F(AV)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

25

20

RMS limit

Hyperfast Rectifier,

2 x 15 A FRED Pt

®

100

(ns)

rr

t

10

100 1000

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

1000

VR = 160 V

= 125 °C

T

J

= 25 °C

T

J

IF = 15 A

dIF/dt (A/µs)

IF = 15 A

15

10

5

Average Power Loss (W)

0

0 5 10 15 20 25

I

F(AV)

DC

- Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5

;

thJC

F(AV)

/D) (see fig. 6);

100

(nC)

rr

Q

VR = 160 V

= 125 °C

T

J

= 25 °C

T

10

100 1000

J

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

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Document Number: 94015

4 Revision: 11-Mar-10