Vishay VS-30CPH03PbF, VS-30CPH03-N3 Data Sheet

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Base

common

cathode

Common

cathode

2

2

13

Anode

1

Anode

2

TO-247AC

1

2

3

VS-30CPH03PbF, VS-30CPH03-N3

Vishay Semiconductors

Ultrafast Rectifier, 2 x 15 A FRED Pt

PRODUCT SUMMARY

Package TO-247AC

I

F(AV)

V

R

V

at I

F

F

t

typ. See Recovery table

rr

T

max. 175 °C

J

Diode variation Common cathode

2 x 15 A

300 V

1.25 V

®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Designed and qualified according to
JEDEC-JESD47

• Material categorization:
For definitions of compliance please see

www.vishay.com/doc?99912

DESCRIPTION/APPLICATIONS

300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

Available

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Repetitive peak reverse voltage V

Average rectified forward current

Non-repetitive peak surge current per leg I

Operating junction and storage temperatures T

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Revision: 17-Jul-13

RRM

per leg

,

V

BR

V

IR = 100 μA 300 - -

R

I

F(AV)

FSM

, T

J

TC = 142 °C

TJ = 25 °C 140

Stg

300 V

15

Atotal device 30

- 65 to 175 °C

IF = 15 A - 1.05 1.25

F

I

= 15 A, TJ = 125 °C - 0.85 1.00

F

VR = VR rated - 0.05 40

R

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T

= 125 °C, VR = VR rated - 12 400

J

VR = 300 V - 45 - pF

T

Measured lead to lead 5 mm from package body - 8 - nH

S

1

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V

μA

VS-30CPH03PbF, VS-30CPH03-N3

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 40

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

= 125 °C - 45 -

T

J

TJ = 25 °C - 2.4 -

T

= 125 °C - 6.1 -

J

= 15 A

I

F

dI

/dt = - 200 A/μs

F

V

= 200 V

R

TJ = 25 °C - 38 -

T

= 125 °C - 137 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance, 
case to heatsink

Weight

Mounting torque

Marking device Case style TO-247AC 30CPH03

T

, T

J

Stg

R

-0.92.0

thJC

Typical socket mount - - 40

R

thJA

R

thCS

Mounting surface, flat, smooth
and greased

Vishay Semiconductors

-32-

- 65 - 175 °C

-0.4-

-6.0- g

-0.21- oz.

6.0

(5.0)

-

12

(10)

nsT

A

nC

°C/W

kgf · cm

(lbf ·in)

Revision: 17-Jul-13

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100

10

1

0.4 0.6 0.8 1.0 1.2 1.4 1.6

I

F

- Instantaneous Forward

Current (A)

VF - Forward Voltage Drop (V)

TJ = 175 °C
T

J

= 125 °C

T

J

= 25 °C

0 50 100 150 200 250 300

I

R

- Reverse Current (µA)

VR - Reverse Voltage (V)

0.001

0.01

0.1

1

10

1000

100

TJ = 175 °C

TJ = 150 °C

TJ = 100 °C

TJ = 125 °C

TJ = 25 °C

1000

100

10

0 50 100 150 200 250 300

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

TJ = 25 °C

VS-30CPH03PbF, VS-30CPH03-N3

Vishay Semiconductors

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

10

1

0.1

- Thermal Impedance (°C/W)

thJC

Z

Revision: 17-Jul-13

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0.01

0.00001 0.0001 0.001 0.01 0.1 1

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Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

P

DM

t

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1/t2

1

thJC

t

2

.

+ T

t1 - Rectangular Pulse Duration (s)

Characteristics

thJC

Fig. 4 - Maximum Thermal Impedance Z

3

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C

Document Number: 94012

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10

100 1000

t

rr

(ns)

dIF/dt (A/µs)

100

IF = 30 A , TJ = 25 °C
I

F

= 30 A , TJ = 125 °C

1000

10

100 1000

Q

rr

(nC)

dIF/dt (A/µs)

100

IF = 30 A , TJ = 25 °C

IF = 30 A , TJ = 125 °C

180

170

160

150

Square wave (D = 0.50)

140

Rated V

applied

R

130

Allowable Case Temperature (°C)

See note (1)

120

0 5 10 15 20 25

I

- Average Forward Current (A)

F(AV)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

22

20

18

16

14

12

10

8

6

4

Average Power Loss (W)

2

0

0 5 10 15 20 25

I

F(AV)

DC

- Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

DC

RMS limit

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

VS-30CPH03PbF, VS-30CPH03-N3

Vishay Semiconductors

Fig. 7 - Typical Reverse Recovery Time vs. dI

Fig. 8 - Typical Stored Charge vs. dI

/dt

F

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR

REV





Revision: 17-Jul-13

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x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

= 200 V

V

R

0.01 Ω

L = 70 μH

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

4

D.U.T.

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

2 - Current rating (30 = 30 A)

3

4

- Package:

4 P = TO-247

5 - H = Hyperfast recovery

6 - Voltage rating (03 = 300 V)

1 - Vishay Semiconductors product

7 - Environmental digit:

PbF = Lead (Pb)-free and RoHS compliant

-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free

Device code

51 32 4 6 7

VS- 30 C P H 03 PbF

- Circuit configuration: C = Common cathode

VS-30CPH03PbF, VS-30CPH03-N3

Vishay Semiconductors

Fig. 10 - Reverse Recovery Waveform and Definitions

ORDERING INFORMATION TABLE

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-30CPH03PbF 25 500 Antistatic plastic tube

VS-30CPH03-N3 25 500 Antistatic plastic tube

Dimensions www.vishay.com/doc?95542

Part marking information

Revision: 17-Jul-13

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LINKS TO RELATED DOCUMENTS

TO-247ACPbF www.vishay.com/doc?95226

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TO-247AC-N3 www.vishay.com/doc?95007

5

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Document Number: 94012

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0.10 AC

M M

E

N

(2)

(3)

(4)

(4)

(2) R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

(5) L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø K BD

M M

A

(6)

Φ P

(Datum B)

Φ P1

D1 (4)

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

TO-247

SYMBOL

A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.33 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 Ø P 3.56 3.66 0.14 0.144

c 0.38 0.89 0.015 0.035 Ø P1 - 7.39 - 0.291
c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q

Revision: 24-Sep-13

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MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

1

MILLIMETERS INCHES

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NOTES

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

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Document Number: 91000