Vishay VS-30CPH03PbF, VS-30CPH03-N3 Data Sheet
www.vishay.com
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
1
2
3
VS-30CPH03PbF, VS-30CPH03-N3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
V
at I
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
2 x 15 A
300 V
1.25 V
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
Average rectified forward current
Non-repetitive peak surge current per leg I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Revision: 17-Jul-13
RRM
per leg
,
V
BR
V
IR = 100 μA 300 - -
R
I
F(AV)
FSM
, T
J
TC = 142 °C
TJ = 25 °C 140
Stg
300 V
15
Atotal device 30
- 65 to 175 °C
IF = 15 A - 1.05 1.25
F
I
= 15 A, TJ = 125 °C - 0.85 1.00
F
VR = VR rated - 0.05 40
R
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
T
= 125 °C, VR = VR rated - 12 400
J
VR = 300 V - 45 - pF
T
Measured lead to lead 5 mm from package body - 8 - nH
S
1
Document Number: 94012
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V
μA
VS-30CPH03PbF, VS-30CPH03-N3
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 40
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
= 125 °C - 45 -
T
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 6.1 -
J
= 15 A
I
F
dI
/dt = - 200 A/μs
F
V
= 200 V
R
TJ = 25 °C - 38 -
T
= 125 °C - 137 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC 30CPH03
T
, T
J
Stg
R
-0.92.0
thJC
Typical socket mount - - 40
R
thJA
R
thCS
Mounting surface, flat, smooth
and greased
Vishay Semiconductors
-32-
- 65 - 175 °C
-0.4-
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
nsT
A
nC
°C/W
kgf · cm
(lbf ·in)
Revision: 17-Jul-13
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94012
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
100
10
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
F
- Instantaneous Forward
Current (A)
VF - Forward Voltage Drop (V)
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
0 50 100 150 200 250 300
I
R
- Reverse Current (µA)
VR - Reverse Voltage (V)
0.001
0.01
0.1
1
10
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
1000
100
10
0 50 100 150 200 250 300
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
TJ = 25 °C
VS-30CPH03PbF, VS-30CPH03-N3
Vishay Semiconductors
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
10
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
Revision: 17-Jul-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
0.00001 0.0001 0.001 0.01 0.1 1
For technical questions within your region: DiodesAmericas@vishay.com
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
P
DM
t
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
1
thJC
t
2
.
+ T
t1 - Rectangular Pulse Duration (s)
Characteristics
thJC
Fig. 4 - Maximum Thermal Impedance Z
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
C
Document Number: 94012
Loading...