Vishay VS-30BQ040PbF Data Sheet

SMC
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 3.0 A
Cathode Anode
3.0 A
40 V
VS-30BQ040PbF
Vishay High Power Products
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-30BQ040PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 3.0 A
40 V
tp = 5 μs sine 2000 A
3.0 Apk, TJ = 125 °C 0.43 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ040PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
AS
50 % duty cycle at TL = 118 °C, rectangular waveform 3.0
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 110
TJ = 25 °C, IAS = 1.0 A, L = 12 mH 6.0 mJ
Current decaying linearly to zero in 1 μs Frequency limited by T
= 110 °C, rectangular waveform 4.0
L
Following any rated load condition and with rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
2000
1.0 A
A
Document Number: 94179 For technical questions, contact: diodestech@vishay.com Revision: 04-Mar-10 1
www.vishay.com
VS-30BQ040PbF
Vishay High Power Products
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward voltage drop V
FM
(1)
3 A
6 A 0.68
6 A 0.57
Maximum reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
RM
T
= 125 °C 30
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 230 pF
T
S
Measured lead to lead 5 mm from package body 3.0 nH
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.53
0.43
0.5
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
Approximate weight
Marking device Case style SMC (similar to DO-214AB) V3F
Notes
dP
(1)
------------­dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------< R
thJA
(1)
T
, T
J
Stg
(2)
R
thJL
- 55 to 150 °C
12
DC operation
R
thJA
46
0.24 g
0.008 oz.
V
mA
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94179
2 Revision: 04-Mar-10
VS-30BQ040PbF
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0.1 0.3 0.6 0.8 0.90.70.40.20 0.5
V
- Forward Voltage Drop (V)
FM
TJ = 150 °C T
= 125 °C
J
T
= 25 °C
J
Schottky Rectifier, 3.0 A
100 000
10 000
1000
100
- Reverse Current (µA)
10
R
I
Vishay High Power Products
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
1
10 30 40200
V
- Reverse Voltage (V)
R
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
100
- Junction Capacitance (pF)
T
C
10
515 30
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
100
10
1
- Thermal Impedance (°C/W)
thJC
Z
0.1
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
TJ = 25 °C
25
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
3520100
40
Characteristics (Per Leg)
thJC
45
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
+ T
C
100110
Document Number: 94179 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 04-Mar-10 3
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