VISHAY VS-30BQ040 Datasheet

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Cathode Anode

SMC (DO-214AB)

High Performance Schottky Rectifier, 3.0 A

PRIMARY CHARACTERISTICS

I

F(AV)

V

R

V

at I

F

F

I

RM

T

max. 150 °C

J

E

AS

Package SMC (DO-214AB)

Circuit configuration Single

30 mA at 125 °C

3.0 A

40 V

0.46 V

6.0 mJ

VS-30BQ040-M3

Vishay Semiconductors

FEATURES

• Very low forward voltage drop

• Guard ring for enhanced ruggedness and long
term reliability

• Small foot print, surface mountable

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The VS-30BQ040-M3 surface-mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.



MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 3.0 A

40 V

tp = 5 μs sine 1600 A

3.0 Apk, TJ = 125 °C 0.46 V

Range -55 to +150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-30BQ040-M3 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

40 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle 
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

I

FSM

AS

AR

50 % duty cycle at TL = 115 °C, rectangular waveform 3.0

50 % duty cycle at T

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse 90

TJ = 25 °C, IAS = 1.0 A, L = 12 mH 6.0 mJ

Current decaying linearly to zero in 1 μs
Frequency limited by T

= 104 °C, rectangular waveform 4.0

L

Following any rated
load condition and with
rated V

maximum VA = 1.5 x VR typical

J

RRM

applied

1600

1.0 A

A

Revision: 18-Apr-2019

1

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Document Number: 93332

VS-30BQ040-M3

dP

tot

dT

J

-------------

1

R

thJA

--------------<

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

3 A

Maximum forward voltage drop V

FM

(1)

3 A

6 A 0.76

6 A 0.64

Maximum reverse leakage current I

Maximum junction capacitance C

Typical series inductance L

RM

T

S

TJ = 25 °C

T

= 125 °C 30

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 230 pF

Measured lead to lead 5 mm from package body 3.0 nH

Maximum voltage rate of change dV/dt Rated V

R

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

Note

(1)

Pulse width = 300 μs, duty cycle = 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance, 
junction to lead

Maximum thermal resistance, 
junction to ambient

Approximate weight

Marking device Case style SMC (DO-214AB) 3F

Notes

(1)

(2)

Mounted 1" square PCB

thermal runaway condition for a diode on its own heatsink

(1)

, T

T

J

Stg

(2)

R

thJL

DC operation

R

thJA

Vishay Semiconductors

0.57

0.46

0.5

R

10 000 V/μs

-55 to +150 °C

12

46

0.24 g

0.008 oz.

V

mA

°C/W

Revision: 18-Apr-2019

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

2

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Document Number: 93332

VS-30BQ040-M3

1

10

100

1000

10 000

100 000

I

R

- Reverse Current (µA)

V

R

- Reverse Voltage (V)

10 30 40200

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

10

100

1000

C

T

- Junction Capacitance (pF)

V

R

- Reverse Voltage (V)

515 30

40

45

3520100

25

TJ = 25 °C

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

100110

Single pulse

(thermal resistance)

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

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10

TJ = 150 °C

= 125 °C

0.6

T

J

= 25 °C

T

J

0.8 1.0

1

0.1

- Instantaneous Forward Current (A)

F

I

V

0.40.20

- Forward Voltage Drop (V)

F

Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.

Vishay Semiconductors

Reverse Voltage (Per Leg)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)

Fig. 4 - Maximum Thermal Impedance Z

Revision: 18-Apr-2019

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions within your region: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Characteristics (Per Leg)

thJC

3

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Document Number: 93332