Vishay VS-30BQ015PbF Data Sheet
PRODUCT SUMMARY
Cathode Anode
SMC
Package SMC
I
F(AV)
V
R
V
at I
F
F
I
RM
max. 125 °C
T
J
Diode variation Single die
E
AS
Schottky Rectifier, 3.0 A
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
3 A
15 V
0.3 V
50 mA at 100 °C
1.5 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-30BQ015PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
VS-30BQ015PbF
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 3.0 A
15 V
tp = 5 μs sine 650 A
1.0 Apk, TJ = 75 °C 0.30 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ015PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
15
25
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 94178 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Feb-11 DiodesAmericas@vishay.com
F(AV)
I
FSM
AR
AS
50 % duty cycle at TL = 83 °C, rectangular waveform 3.0
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 75
TJ = 25 °C, IAS = 0.5 A, L = 12 mH 1.5 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
= 78 °C, rectangular waveform 4.0
L
Following any rated
load condition and with
rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
650
0.5 A
A
VS-30BQ015PbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward voltage drop V
FM
(1)
3 A
6 A 0.40
6 A 0.35
Maximum reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
RM
T
S
T
= 100 °C 50
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1120 pF
Measured lead to lead 5 mm from package body 3.0 nH
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 75 °C
T
J
V
= Rated V
R
R
R
0.35
0.30
4
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMC (similar to DO-214AB) V3C
Notes
(1)
(2)
Mounted 1" square PCB
thermal runaway condition for a diode on its own heatsink
(1)
J
Stg
(2)
R
thJL
- 55 to 125
- 55 to 150
12
DC operation
R
thJA
46
0.24 g
0.008 oz.
V
mA
°C
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94178
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Feb-11
0.1
1
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.1 0.3
0.5
0.40.20
TJ = 100 °C
T
J
= 75 °C
T
J
= 25 °C
0.01
0.1
1
10
100
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
39
15
1260
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
100
1000
C
T
- Juction Capacitance (pF)
VR - Reverse Voltage (V)
12
16
840
TJ = 25 °C
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-30BQ015PbF
Schottky Rectifier, 3.0 A
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Document Number: 94178 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Feb-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
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Characteristics (Per Leg)
thJC
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