Vishay VS-2N681 Series, VS-2N5205 Series Data Sheet
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VS-2N681, VS-2N5205 Series
RMS SCRs, 25 A, 35 A
FEATURES
• General purpose stud mounted
• Broad forward and reverse voltage range through 1200 V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Vishay Semiconductors
TO-208AA (TO-48)
TYPICAL APPLICATIONS
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
PRODUCT SUMMARY
I
T(AV)
I
T(RMS)
V
DRM/VRRM
V
TM
I
GT
T
J
Package TO-208AA (TO-48)
Diode variation Single SCR
25 V to 1200 V
-40 °C to 125 °C
16 A, 22 A
25 A, 35 A
2.3 V
60 mA
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS 2N681-92 2N5205-07 UNITS
(1)
I
T(AV)
I
T(RMS)
I
TSM
I2t
I
GT
T
C
50 Hz 145 285
60 Hz 150
50 Hz 103 410
60 Hz 94 375
16
-65 to 65
(1)
25 35 A
(1)
40 40 mA
dV/dt - 100
dI/dt 75 to 100 100 A/μs
V
V
T
DRM
RRM
J
Range 25 to 800 600 to 1200 V
Range 25 to 800 600 to 1200 V
-65 to 125
(1)
Note
(1)
JEDEC® registered value
(1)
22
-40 to 40 °C
(1)
300
(1)
-40 to 125
(1)
A
A
A2s
V/μs
°C
Revision: 18-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93706
VS-2N681, VS-2N5205 Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE)
TYPE NUMBER
V
RRM/VDRM
REVERSE AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE PEAK
V
VS-2N681 25 35
VS-2N682 50 75
VS-2N683 100 150
VS-2N685 200 300
VS-2N687 300 400
VS-2N688 400 500
VS-2N689 500 600
VS-2N690 600 720
VS-2N691 700 840
VS-2N692 800 960
VS-2N5205 800 960
VS-2N5206 1000 1200
VS-2N5207 1200 1440
Note
• JEDEC registered values
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE (t
V
Vishay Semiconductors
< 5 ms)
p
T
J
-65 °C to 125 °C
-40 °C to 125 °C
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t capability for fusing
2
t capability for
individual device fusing
Maximum I
2
t capability for
individual device fusing
Maximum peak on-state voltage V
Maximum holding current I
Notes
(1)
JEDEC registered value
(2)I2
t for time tx = I2t · t
x
(1)
I
T(RMS)
I
2
t
I
T(AV)
TSM
I
180° half sine wave conduction
25 35 A
50 Hz half cycle sine wave
or 6 ms rectangular pulse
60 Hz half cycle sine wave
or 5 ms rectangular pulse
50 Hz half cycle sine wave
or 6 ms rectangular pulse
60 Hz half cycle sine wave
or 5 ms rectangular pulse
t = 10 ms Rated V
t = 8.3 ms 94 375
2
t
t = 10 ms
t = 8.3 ms 135 530
t = 0.1 ms to 10 ms, initial TJ < 125 °C
(2)
TM
H
applied following surge = 0
V
RRM
TJ = 25 °C, I
I
= 22 A (70 A peak) 2N5204
T(AV)
= 16 A (50 A peak) 2N681,
T(AV)
Anode supply 24 V, initial IT = 1.0 A
Following any rated
load condition, and
with rated V
RRM
applied
following surge
Same conditions as
above except with
V
applied following
RRM
surge = 0
applied
RRM
following surge,
initial T
= 125 °C
J
V
= 0 following
RRM
surge, initial T
= 125 °C
J
16
-65 to 65
(1)
145 285
(1)
150
170 340
180 355
103 410
145 580
1450 5800 A
(1)
2
20 at 25 °C
(typical)
(1)
22
-40 to 40
(1)
300
(1)
2.3
(1)
at
200
-40 °C
(1)
A
°C
A
A
2
V
mA
2
s
s
Revision: 18-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93706
VS-2N681, VS-2N5205 Series
www.vishay.com
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum non-repetitive
rate of rise of turned-on
current
= 25 V to 600 V
V
DM
V
= 700 V to 800 V 75 -
DM
dI/dt
TC = 125 °C, VDM = Rated V
I
= 2 x dI/dt, gate pulse = 20 V,
TM
15 , t
= 6 μs, tr = 0.1 μs maximum
p
Per JEDEC standard RS-397, 5.2.2.6
= 125 °C, VDM = 600 V, ITM = 200 A at
T
C
400 Hz maximum, gate pulse = 20 V, 15 ,
t
= 6 μs, tr = 0.1 μs maximum
p
Per JEDEC standard RS-397, 5.2.2.6
Typical delay time t
TC = 25 °C, VDM = Rated V
DC resistive circuit, gate pulse = 10 V,
d
40 source, t
= 6 μs, tr = 0.1 μs
p
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
= 125 °C, exponential
T
J
Minimum critical rate of
rise of off-state voltage
Maximum reverse
leakage current
Note
(1)
JEDEC registered value
V
V
V
V
V
V
V
RRM
RRM
RRM
RRM
RRM
RRM
RRM
dV/dt
, V
= 400 V
DRM
, V
= 500 V 3.5 -
DRM
, V
= 600 V 2.5 3.3
DRM
, V
= 700 V 2.2 -
DRM
, V
= 800 V 2 2.5
DRM
, V
= 1000 V - 2
DRM
, V
= 1200 V - 1.7
DRM
I
DRM
I
RRM
to 100 % rated V
= 125 °C, exponential
T
J
to 67 % rated V
,
TJ = 125 °C
DRM
DRM
Vishay Semiconductors
,
DRM
, ITM = 10 A
Gate open
circuited
100 -
- 100
11μs
100
(typical)
100
250
(typical)
3.5 -
(1)
250
A/μs
V/μs
mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS 2N681-92 2N5205-07 UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current +I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
Maximum required DC gate
current to trigger
Typical DC gate current to trigger T
tp < 5 ms for 2N681 series;
GM
t
< 500 μs for 2N5204 series
p
G(AV)
GM
GM
GM
TC = min.
rated value
I
GT
T
= 25 °C 40 40
C
= 125 °C 18.5 20
T
C
= 25 °C, + 6 V anode to cathode 30 30
C
Maximum required gate trigger current
is the lowest value which will trigger all
units with + 6 V anode to cathode
Maximum required gate trigger voltage
Maximum required DC gate
voltage to trigger
V
GT
Typical DC gate voltage to trigger T
TC = - 65 °C
T
= 25 °C 2 2
C
= 25 °C, + 6 V anode to cathode 1.5 1.5
C
is the lowest value which will trigger all
units with + 6 V anode to cathode
Maximum gate voltage not to trigger is
Maximum DC gate voltage
not to trigger
V
GD
TC = 125 °C
the maximum value which will not
trigger any unit with rated V
DRM
anode
to cathode
Note
(1)
JEDEC registered value
Revision: 18-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
0.5
2
10
5
80
3
0.25
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
60
(1)
0.5
2A
-
(1)
5
(1)
80
(1)
3
(1)
0.25
Document Number: 93706
W
V
mA
V
V
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