Vishay VS-25F(R) Series Data Sheet

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Standard Recovery Diodes
DO-203AA (DO-4)
PRODUCT SUMMARY
I
F(AV)
Package DO-203AA (DO-4)
Circuit configuration Single diode
(Stud Version), 25 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
• Converters
25 A
• Power supplies
• Machine tool controls
 
VS-25F(R) Series
Vishay Semiconductors
RRM
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
120 °C
C
50 Hz 356
60 Hz 373
50 Hz 636
60 Hz 580
Range 100 to 1200 V
25 A
40 A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM
V
RRM
TYPE NUMBER
VS-25F(R)
Note
(1)
Avalanche version only available from V
Revision: 28-Jan-14
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
10 100 150 -
20 200 275 -
40 400 500 500
60 600 725 750
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REPETITIVE PEAK
REVERSE VOLTAGE
V
400 V to 1200 V
RRM
V
, MAXIMUM
RSM
NON-REPETITIVE
PEAK VOLTAGE
V
1
V
, MINIMUM
R(BR)
AVALANCHE
VOLTAGE
(1)
V
Document Number: 93506
A
A2s
I
MAXIMUM
RRM
AT T
= 175 °C
J
mA
12
VS-25F(R) Series
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current at case temperature
Maximum RMS forward current I Maximum on-repetitive peak
reverse power
Maximum peak, one-cycle forward, non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6360 A2s
Low level value of threshold voltage V
High level value of threshold voltage V Low level value of forward
slope resistance High level value of forward
slope resistance
I
F(AV)
F(RMS)
P
R
I
FSM
F(TO)1
F(TO)2
r
r
Maximum forward voltage drop V
Note
(1)
Available only for avalanche version, all other parameters the same as 25F
180° conduction, half sine wave
(1)
10 μs square pulse, TJ = TJ maximum 10 K/W
t = 10 ms
t = 8.3 ms 373
t = 10 ms
t = 8.3 ms 314
t = 10 ms
t = 8.3 ms 580
t = 10 ms
t = 8.3 ms 410
(16.7 % x x I (I > x I
(16.7 % x x I
f1
(I > x I
f2
Ipk = 78 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 V
FM
No voltage reapplied
100 % V reapplied
No voltage
RRM
Sinusoidal half wave, initial T
= TJ maximum
J
reapplied
100 % V reapplied
F(AV)
), TJ = TJ maximum 0.90
F(AV)
F(AV)
), TJ = TJ maximum 5.70
F(AV)
RRM
< I < x I
< I < x I
), TJ = TJ maximum 0.80
F(AV)
), TJ = TJ maximum 6.80
F(AV)
Vishay Semiconductors
25 A
120 °C
40 A
356
300
636
450
A
A
V
m
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.28 0.24
120° 0.39 0.41
90° 0.50 0.54
60° 0.73 0.75
30° 1.20 1.21
Note
• The table above shows the increment of thermal resistance R
Revision: 28-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T
J
T
Stg
R
thJC
R
thCS
DC operation 1.5
Mounting surface, smooth, flat and greased 0.5
Not lubricated threads
Lubricated threads
- 65 to 175
- 65 to 200
+ 0 - 10 %
1.5 (13)
+ 0 - 10 %
1.2 (10)
(lbf · in)
(lbf · in)
7g
0.25 oz.
T
= TJ maximum K/W
J
when devices operate at different conduction angles than DC
thJC
2
Document Number: 93506
°C
K/W
N · m
N · m
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0255075100
Maximum Allowable Ambient Temperature (°C)
1
0
K
/
W
1
5
K
/
W
R
=
4
K
/
W
-
D
e
l
t
a
R
t
h
S
A
6
K
/
W
8
K
/
W
2
0
K
/
W
3
0
K
/
W
0
5
10
15
20
25
0 5 10 15 20 25 30
DC 180° 120°
90° 60° 30°
Average Forward Current (A)
RMS Limi t
Maximum Average Forward Power Loss (W)
Conduct ion Perio d
16F(R) Series T = 175 °C
J
VS-25F(R) Series
Vishay Semiconductors
180
170
25F(R) Series R (DC) = 1.5 K/W
thJC
160
150
Conduction Angl e
140
130
120
110
Maximum Al lowable Case Temperat ure (°C)
100
0 5 10 15 20 25 30
30°
90°
60°
Average Forward Current (A)
120°
180°
180
170
25F(R) Series R (DC) = 1.5 K/W
thJC
160
150
Conducti on Period
140
130
120
110
Maximum All owab le Ca se Tempe ratu re (° C)
100
0 5 10 15 20 25 30 35 40 45
30°
60°
90°
120°
180°
Average Forward Current (A)
DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
35
30
25
20
180° 120°
90° 60° 30°
RMS Limi t
15
10
5
Maximum Average Forward Power Loss (W)
0
0 5 10 15 20 25 30
Con duct ion Angl e
25F(R) Seri es T = 175°C
J
Average Forward Current (A)
3
K
/
W
4
K
/
W
6
K
/
W
8
K
/
W
1
2
K
/
W
2
0K
/
W
4
0
K
/
W
0 25 50 75 100 125 150 175
Maximum Allowable Ambient Temperature (°C)
R
2
t
h
K
S
/
W
A
=
1
K
/
W
­D
e
l
t
a
R
Revision: 28-Jan-14
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93506
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50
100
150
200
250
300
350
110100
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplit ude Half Cycle Curr ent Pulses (N)
Initial T = 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
At Any Rated Load Conditi on And With Rated V Applied Following Surge.
RRM
J
25F(R) Series
0.1
1
10
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
25F(R) Series
Steady Stat e Value
R = 1.5 K/W
(DC Operation)
thJC
1000
100
VS-25F(R) Series
Vishay Semiconductors
T = 25°C
J
T = 175°C
10
J
Fig. 5 - Maximum Non-Repetitive Surge Current
400
Maxi mum Non Rep etiti ve Surge Cur rent
350
300
250
200
150
100
50
Peak Half Sine Wave Forward Current (A)
25F(R) Series
0
0.01 0.1 1 10
Versus Pulse Train Duration.
Pulse Train Durati on (s)
Initial T = 175°C
No Voltage Reapplied
Rated V Reapplied
RRM
Fig. 6 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
Instantaneous Forward Current (A)
1
0 0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous Forward Voltage (V)
25F(R) Series
Fig. 7 - Forward Voltage Drop Characteristics
J
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
Device code
Dimensions www.vishay.com/doc?95311
Revision: 28-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
25VS- F R 120 M
5 61 32 4
1 - Vishay Semiconductors product
2 - Current rating: Code = I
3 - F = Standard device
4 - None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5 - Voltage code x 10 = V
- None = Stud base DO-203AA (DO-4) 10-32UNF-2A
6
M = Stud base DO-203AA (DO-4) M5 X 0.8
(not available for avalanche diodes)
LINKS TO RELATED DOCUMENTS
4
F(AV)
(see Voltage Ratings table)
RRM
Document Number: 93506
DIMENSIONS in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
5.50 (0.22) MIN.
10.20 (0.40) MAX.
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
Ø 6.8 (0.27)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
20.30 (0.80) MAX.
11 (0.43)
2
+ 0.3
0
(0.08 )
+ 0.01
0
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
Document Number: 95311 For technical questions, contact: indmodules@vishay.com Revision: 30-Jun-08 1
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Revision: 02-Oct-12
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