Vishay VS-25F(R) Series Data Sheet

www.vishay.com
Standard Recovery Diodes
DO-203AA (DO-4)
PRODUCT SUMMARY
I
F(AV)
Package DO-203AA (DO-4)
Circuit configuration Single diode
(Stud Version), 25 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
• Converters
25 A
• Power supplies
• Machine tool controls
 
VS-25F(R) Series
Vishay Semiconductors
RRM
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
120 °C
C
50 Hz 356
60 Hz 373
50 Hz 636
60 Hz 580
Range 100 to 1200 V
25 A
40 A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM
V
RRM
TYPE NUMBER
VS-25F(R)
Note
(1)
Avalanche version only available from V
Revision: 28-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
10 100 150 -
20 200 275 -
40 400 500 500
60 600 725 750
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REPETITIVE PEAK
REVERSE VOLTAGE
V
400 V to 1200 V
RRM
V
, MAXIMUM
RSM
NON-REPETITIVE
PEAK VOLTAGE
V
1
V
, MINIMUM
R(BR)
AVALANCHE
VOLTAGE
(1)
V
Document Number: 93506
A
A2s
I
MAXIMUM
RRM
AT T
= 175 °C
J
mA
12
VS-25F(R) Series
www.vishay.com
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current at case temperature
Maximum RMS forward current I Maximum on-repetitive peak
reverse power
Maximum peak, one-cycle forward, non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6360 A2s
Low level value of threshold voltage V
High level value of threshold voltage V Low level value of forward
slope resistance High level value of forward
slope resistance
I
F(AV)
F(RMS)
P
R
I
FSM
F(TO)1
F(TO)2
r
r
Maximum forward voltage drop V
Note
(1)
Available only for avalanche version, all other parameters the same as 25F
180° conduction, half sine wave
(1)
10 μs square pulse, TJ = TJ maximum 10 K/W
t = 10 ms
t = 8.3 ms 373
t = 10 ms
t = 8.3 ms 314
t = 10 ms
t = 8.3 ms 580
t = 10 ms
t = 8.3 ms 410
(16.7 % x x I (I > x I
(16.7 % x x I
f1
(I > x I
f2
Ipk = 78 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 V
FM
No voltage reapplied
100 % V reapplied
No voltage
RRM
Sinusoidal half wave, initial T
= TJ maximum
J
reapplied
100 % V reapplied
F(AV)
), TJ = TJ maximum 0.90
F(AV)
F(AV)
), TJ = TJ maximum 5.70
F(AV)
RRM
< I < x I
< I < x I
), TJ = TJ maximum 0.80
F(AV)
), TJ = TJ maximum 6.80
F(AV)
Vishay Semiconductors
25 A
120 °C
40 A
356
300
636
450
A
A
V
m
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Allowable mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.28 0.24
120° 0.39 0.41
90° 0.50 0.54
60° 0.73 0.75
30° 1.20 1.21
Note
• The table above shows the increment of thermal resistance R
Revision: 28-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T
J
T
Stg
R
thJC
R
thCS
DC operation 1.5
Mounting surface, smooth, flat and greased 0.5
Not lubricated threads
Lubricated threads
- 65 to 175
- 65 to 200
+ 0 - 10 %
1.5 (13)
+ 0 - 10 %
1.2 (10)
(lbf · in)
(lbf · in)
7g
0.25 oz.
T
= TJ maximum K/W
J
when devices operate at different conduction angles than DC
thJC
2
Document Number: 93506
°C
K/W
N · m
N · m
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