VS-25ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
Base
cathode
2
DESCRIPTION/FEATURES
The VS-25ETS..SPbF rectifier High Voltage Series
has been optimized for very low forward
voltage drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
D2PAK
Anode
1
3
Anode
Typical applications are in input rectification and
these products are designed to be used with
Vishay HPP switches and output rectifiers which
are available in identical package outlines.
PRODUCT SUMMARY
VF at 10 A < 1 V
I
FSM
V
RRM
300 A
800 V to 1200 V
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
20 23 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Sinusoidal waveform 25 A
800 to 1200 V
300 A
10 A, TJ = 25 °C 1.0 V
- 40 to 150 °C
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
VS-25ETS08SPbF 800 900
VS-25ETS12SPbF 1200 1300
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
1VS-25ETS10SPbF 1000 1100
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
Document Number: 94342 For technical questions, contact: diodestech@vishay.com
Revision: 09-Apr-10 1
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2√s
F(AV)
I
FSM
TC = 106 °C, 180° conduction half sine wave 25
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 442
applied 250
RRM
applied 316
RRM
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A
2
A
s
VS-25ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 25 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
F(TO)
RM
25 A, TJ = 25 °C 1.14 V
t
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 1.0
J
V
= Rated V
R
RRM
9.62 mΩ
0.87 V
0.1
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device Case style D
minimum 6 (5)
maximum 12 (10)
T
, T
J
Stg
R
DC operation 0.9
thJC
62
R
thJA
R
Mounting surface, smooth and greased 0.5
thCS
2
PAK (SMD-220)
- 40 to 150 °C
2g
0.07 oz.
kgf · cm
(lbf · in)
25ETS08S
25ETS10S
25ETS12S
mA
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
2 Revision: 09-Apr-10
Document Number: 94342
VS-25ETS..SPbF High Voltage Series
150
140
130
120
110
100
Temperature (°C)
Maximum Allowable Case
90
80
0
94342_01
150
140
130
Input Rectifier Diode, 25 A
R
(DC) = 0.9 K/W
thJC
Ø
Conduction angle
90°
60°
30°
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
R
(DC) = 0.9 K/W
thJC
120°
180°
201510525
Ø
Conduction period
Vishay High Power Products
60
50
40
30
20
Power Loss (W)
10
Maximum Average Forward
0
30
94342_04
0
Fig. 4 - Forward Power Loss Characteristics
300
200
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
TJ = 150 °C
10 20 30
Average Forward Current (A)
At any rated load condition and with
rated V
applied following surge.
RRM
Initial T
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
= 150 °C
40
120
110
Temperature (°C)
100
Maximum Allowable Case
90
0
94342_02
40
35
30
25
20
15
Power Loss (W)
10
5
Maximum Average Forward
0
94342_03
Fig. 3 - Forward Power Loss Characteristics
DC
30°
Average Forward Current (A)
90°
60°
2015105253035
120°
180°
Fig. 2 - Current Rating Characteristics
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
TJ = 150 °C
51015
200
25
Average Forward Current (A)
100
Forward Current (A)
Peak Half Sine Wave
40
94342_05
0
Number of Equal Amplitude Half
10 1001
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
200
100
Forward Current (A)
Peak Half Sine Wave
30
94342_06
0
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
No voltage reapplied
Rated V
0.1 1010.01
J
reapplied
RRM
= 150 °C
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94342 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 09-Apr-10 3