Vishay VS-25ETS..SPbF High Voltage Series Data Sheet

VS-25ETS..SPbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 25 A

Base

cathode

2

DESCRIPTION/FEATURES

The VS-25ETS..SPbF rectifier High Voltage Series
has been optimized for very low forward
voltage drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.

D2PAK

Anode

1

3

Anode

Typical applications are in input rectification and
these products are designed to be used with
Vishay HPP switches and output rectifiers which
are available in identical package outlines.

PRODUCT SUMMARY

VF at 10 A < 1 V

I

FSM

V

RRM

300 A

800 V to 1200 V

• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C

• Compliant to RoHS directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

• Designed and qualified for industrial level

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C

A

20 23 A

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Sinusoidal waveform 25 A

800 to 1200 V

300 A

10 A, TJ = 25 °C 1.0 V

- 40 to 150 °C

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

VS-25ETS08SPbF 800 900

VS-25ETS12SPbF 1200 1300

REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1VS-25ETS10SPbF 1000 1100

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

Document Number: 94342 For technical questions, contact: [e-mail]
Revision: 09-Apr-10 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2√s

F(AV)

I

FSM

TC = 106 °C, 180° conduction half sine wave 25

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 300

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 442

applied 250

RRM

applied 316

RRM

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A

2

A

s

VS-25ETS..SPbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 25 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

F(TO)

RM

25 A, TJ = 25 °C 1.14 V

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

RRM

9.62 mΩ

0.87 V

0.1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style D

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

DC operation 0.9

thJC

62

R

thJA

R

Mounting surface, smooth and greased 0.5

thCS

2

PAK (SMD-220)

- 40 to 150 °C

2g

0.07 oz.

kgf · cm

(lbf · in)

25ETS08S

25ETS10S

25ETS12S

mA

°C/W

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2 Revision: 09-Apr-10

Document Number: 94342

VS-25ETS..SPbF High Voltage Series

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

90

80

0

94342_01

150

140

130

Input Rectifier Diode, 25 A

R

(DC) = 0.9 K/W

thJC

Ø

Conduction angle

90°

60°

30°

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

R

(DC) = 0.9 K/W

thJC

120°

180°

201510525

Ø

Conduction period

Vishay High Power Products

60

50

40

30

20

Power Loss (W)

10

Maximum Average Forward

0

30

94342_04

0

Fig. 4 - Forward Power Loss Characteristics

300

200

DC
180°
120°

90°

60°

30°

RMS limit

Ø

Conduction period

TJ = 150 °C

10 20 30

Average Forward Current (A)

At any rated load condition and with

rated V

applied following surge.

RRM

Initial T

J

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

= 150 °C

40

120

110

Temperature (°C)

100

Maximum Allowable Case

90

0

94342_02

40

35

30

25

20

15

Power Loss (W)

10

5

Maximum Average Forward

0

94342_03

Fig. 3 - Forward Power Loss Characteristics

DC

30°

Average Forward Current (A)

90°

60°

2015105253035

120°

180°

Fig. 2 - Current Rating Characteristics

180°
120°

90°
60°
30°

RMS limit

Ø

Conduction angle

TJ = 150 °C

51015

200

25

Average Forward Current (A)

100

Forward Current (A)

Peak Half Sine Wave

40

94342_05

0

Number of Equal Amplitude Half

10 1001

Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

300

200

100

Forward Current (A)

Peak Half Sine Wave

30

94342_06

0

Maximum non-repetitive surge current

versus pulse train duration.

Initial T

No voltage reapplied

Rated V

0.1 1010.01

J

reapplied

RRM

= 150 °C

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 94342 For technical questions, contact: [e-mail]

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Revision: 09-Apr-10 3

VS-25ETS..SPbF High Voltage Series

Vishay High Power Products

1000

100

10

Instantaneous Forward Current (A)

1

94342_07

Fig. 7 - Forward Voltage Drop Characteristics

1

Input Rectifier Diode, 25 A

TJ = 25 °C

TJ = 150 °C

012345

Instantaneous Forward Voltage (V)

Steady state value
(DC operation)

0.1

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.01

0.0001 0.001 0.01 0.1 1 10010

94342_08

Single pulse

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Characteristics

thJC

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Document Number: 94342

4 Revision: 09-Apr-10

VS-25ETS..SPbF High Voltage Series

ORDERING INFORMATION TABLE

Device code

VS- 25 E T S 12 S TRL PbF

- HPP product suffix

1

- Current rating (25 = 25 A)

2

3 - Circuit configuration

4

- Package:

T = TO-220AC

5 - Type of silicon:

S = Standard recovery rectifier

6 - Voltage code x 100 = V

S = TO-220 D

-

7

8

9 -

None = Tube

-

TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

PbF = Lead (Pb)-free

Input Rectifier Diode, 25 A

324

E = Single diode

2

PAK (SMD-220) version

51

6789

RRM

Vishay High Power Products

08 = 800 V
10 = 1000 V
12 = 1200 V

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95046

Part marking information www.vishay.com/doc?95054

Packaging information www.vishay.com/doc?95032

Document Number: 94342 For technical questions, contact: [e-mail]
Revision: 09-Apr-10 5

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DIMENSIONS in millimeters and inches

c

B

Detail A

c2

AA

A

± 0.004

B

M

A

Lead tip

(3)

(3)

View A - A

(E)

(D1)

E1

B

H

A1

Detail “A”

Rotated 90 °CW

Scale: 8:1

L

Gauge

plane

0° to 8°

L3

L4

Seating

plane

Section B - B and C - C

Scale: None

(4)

(4)

(b, b2)

b1, b3

(c)

c1

Base
Metal

Plating

Conforms to JEDEC outline D

2

PAK (SMD-220)

132

D

C

A

L2

E

(2)(3)

(2)

4

H

BB

2 x b

2 x b2

L1

0.010

A

B

MM

(3)

e

2 x

Pad layout

MIN.

11.00
(0.43)

MIN.

9.65

(0.38)

MIN.

3.81

(0.15)

MIN.

2.32

(0.08)

17.90 (0.70)

15.00 (0.625)

2.64 (0.103)

2.41 (0.096)

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

Outline Dimensions

Vishay Semiconductors

D2PAK

SYMBOL

A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Notes

(1)

(2)

(3)

(4)

(5)

(6)

(7)

Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 [e-mail]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

This document is subject to change without notice.

NOTES SYMBOL

, [e-mail], [e-mail] 1

MILLIMETERS INCHES

www.vishay.com/doc?91000

NOTES

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