Vishay VS-22RIA Series Data Sheet
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TO-208AA (TO-48)
Medium Power Phase Control Thyristors
PRODUCT SUMMARY
Package TO-208AA (TO-48)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
100 V to 1200 V
-65 °C to 125 °C
(Stud Version), 22 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V V
• Designed and qualified for industrial and consumer level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
22 A
1.70 V
60 mA
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
VS-22RIA Series
Vishay Semiconductors
DRM/VRRM
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 400
60 Hz 420
50 Hz 793
60 Hz 724
Typical 110 μs
22 A
85 °C
35 A
100 to 1200 V
-65 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-22RIA
V
VOLTAGE
CODE
10 100 150
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
(1)
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
V
I
(2)
DRM/IRRM
AT T
= TJ MAXIMUM
J
A
A2s
MAXIMUM
mA
20
10
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with tp 5 ms
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93700
VS-22RIA Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage V
Maximum holding current I
Latching current I
I
T(AV)
T(RMS)
I
TSM
180° sinusoidal conduction
35 A
t = 10 ms
t = 8.3 ms 420
t = 10 ms
t = 8.3 ms 355
t = 10 ms
t = 8.3 ms 724
t = 10 ms
t = 8.3 ms 515
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
t = 0.1 to 10 ms, no voltage reapplied,
T
= TJ maximum
J
T(TO)1
T(TO)2
r
t1
r
t2
TM
H
L
(16.7 % x x I
(I > x I
T(AV)
(16.7 % x x I
(I > x I
T(AV)
Ipk = 70 A, TJ = 25 °C 1.70 V
TJ = 25 °C, anode supply 6 V, resistive load
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 0.95
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 13.4
Vishay Semiconductors
22 A
85 °C
400
335
=TJ maximum
J
), TJ = TJ maximum 0.83
), TJ = TJ maximum 14.9
793
560
7930 A
130
200
A
A
2
V
m
mA
2
s
s
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
V
600 V
DRM
800 V 180
V
Maximum rate of rise
of turned-on current
DRM
V
1000 V 160
DRM
1600 V 150
V
DRM
Typical turn-on time t
Typical reverse recovery time t
Typical turn-off time t
dI/dt
gt
rr
q
= TJ maximum, VDM = Rated V
T
J
Gate pulse = 20 V, 15 , t
I
= (2 x rated dI/dt) A
TM
TJ = 25 °C, at rated V
TJ = TJ maximum, ITM = I
dI/dt = - 10 A/μs
TJ = TJ maximum, ITM = I
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
= 6 μs, tr = 0.1 μs maximum
p
DRM/VRRM
T(AV)
T(AV)
DRM
, TJ = 125 °C 0.9
, tp > 200 μs,
, tp > 200 μs, VR = 100 V,
gate bias 0 V to 100 W
DRM
200
4
,
110
Note
= 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
•t
q
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
J
= TJ maximum linear to 67 % rated V
T
J
DRM
DRM
= TJ maximum linear to 100 % rated V
T
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
100
(1)
300
Document Number: 93700
A/μs
μs
V/μs
VS-22RIA Series
www.vishay.com
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak negative gate voltage -V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GT
GT
GD
GD
TJ = TJ maximum
TJ = TJ maximum 1.5 A
TJ = TJ maximum 10 V
TJ = - 65 °C
= 25 °C 60
J
= 125 °C 35
T
J
TJ = - 65 °C 3.0
= 25 °C 2.0
T
J
T
= 125 °C 1.0
J
TJ = TJ maximum, V
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
= Rated value 2.0 mA
DRM
Maximum gate current/voltage
TJ = TJ maximum,
V
= Rated value
DRM
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
anode to
DRM
8.0
2.0
90
0.2 V
W
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque
Approximate weight
Case style See dimensions - link at the end of datasheet TO-208AA (TO-48)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180°
120°
90°
60°
30°
Note
• The table above shows the increment of thermal resistance R
, T
T
J
Stg
R
thJC
R
thCS
DC operation 0.86
Mounting surface, smooth, flat and greased 0.35
Lubricated threads
(Non-lubricated threads)
0.21 0.15
0.25 0.25
0.31 0.34
0.45 0.47
0.76 0.76
when devices operate at different conduction angles than DC
thJC
-65 to 125 °C
TO NUT TO DEVICE
20 (27.5) 25 lbf in
0.23 (0.32) 0.29 kgf · m
2.3 (3.1) 2.8 N · m
14 g
0.49 oz.
T
= TJ maximum K/W
J
K/W
Revision: 11-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93700
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