Vishay VS-21DQ04, VS-21DQ04-M3 Data Sheet
www.vishay.com
DO-204AL
PRODUCT SUMMARY
Package DO-204AL (DO-41)
I
F(AV)
V
R
V
at I
F
F
I
max. 10 mA at 125 °C
RM
T
max. 150 °C
J
Diode variation Single die
E
AS
VS-21DQ04, VS-21DQ04-M3
Schottky Rectifier, 2 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode Anode
2 A
40 V
0.5 V
5.0 mJ
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-21DQ04... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
V
T
RRM
F
J
Rectangular waveform 2A
40
2 Apk, TJ = 125 °C 0.5
Range - 40 to 150 °C
V
VOLTAGE RATINGS
PARAMETER SYMBOL VS-21DQ04 VS-21DQ04-M3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
40 40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 112 °C, rectangular waveform 2
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 70
TJ = 25 °C, I
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
= 1.0 A, L = 10 mH 5.0 mJ
AS
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
applied
V
RRM
420
1.0 A
A
Revision: 21-Sep-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93279
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-21DQ04, VS-21DQ04-M3
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum forward voltage drop V
Maximum reverse leakage current I
RM
Typical junction capacitance C
Typical series inductance L
FM
2 A
4 A 0.60 0.65
(1)
2 A
4 A 0.56 0.62
TJ = 25 °C
(1)
T
S
T
= 125 °C 5.2 10
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 130 pF
Measured lead to lead 5 mm from package body 8.0 nH
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
Marking device Case style DO-204AL (D-41) 21DQ04
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation
See fig. 4
Vishay Semiconductors
VALUES
TYP. MAX.
0.49 0.55
0.42 0.5
0.01 0.50
R
- 40 to 150 °C
100
25
0.33 g
0.012 oz.
UNITS
V
mA
°C/W
Revision: 21-Sep-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93279
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