Vishay VS-20UT04, VS-20WT04FN Data Sheet
I-PAK (TO-251AA)
D-PAK (TO-252AA)
VS-20UT04 VS-20WT04FN
Base
cathode
Anode Anode
4, 2
3
1
Base
cathode
Anode Anode
4, 2
3
1
VS-20UT04, VS-20WT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 20 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
vs. IR trade off for high efficiency
F
PRODUCT SUMMARY
Package
I
F(AV)
V
R
at I
V
F
F
I
max. 7 mA at 125 °C
RM
T
max. 175 °C
J
Diode variation Single die
E
AS
Note
•V
measured at 125 °C, connecting 2 anode pins
F
D-PAK (TO-252AA),
I-PAK (TO-251AA)
20 A
45 V
0.53 V
108 mJ
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
20 Apk, TJ = 125 °C
(typical, measured connecting 2 anode pins)
Range - 55 to 175 °C
45 V
0.480 V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS
Maximum DC reverse voltage V
R
TJ = 25 °C 45 V
VS-20UT04
VS-20WT04FN
UNITS
Document Number: 94573 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-20UT04, VS-20WT04FN
Vishay Semiconductors
High Performance Schottky
Generation 5.0, 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
F(AV)
I
FSM
Non-repetitive avalanche energy E
Repetitive avalanche current I
AR
Note
(1)
Measured connecting 2 anode pins
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop V
Reverse leakage current I
Junction capacitance C
Series inductance L
Maximum voltage rate of change dV/dt Rated V
Notes
(1)
Pulse width < 300 μs, duty cycle < 2 %
(2)
Only 1 anode pin connected
FM
RM
50 % duty cycle at TC = 153 °C, rectangular waveform 20 A
5 μs sine or 3 μs rect. pulse
Following any rated load
900
condition and with rated
10 ms sine or 6 ms rect. pulse 220
TJ = 25 °C, IAS = 7 A, L = 4.4 mH 108 mJ
AS
V
RRM
applied
Limited by frequency of operation and time pulse duration
so that T
10 A
20 A 0.570 0.610
(1)(2)
10 A
20 A 0.520 0.580
TJ = 25 °C
(1)
T
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1900 - pF
T
Measured lead to lead 5 mm from package body - - nH
S
< TJ max. IAS at TJ max. as a function of time pulse
J
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
= 125 °C - 7 mA
J
R
R
(1)
I
AS
T
max.
J
0.505 0.540
0.415 0450
- 100 μA
- 10 000 V/μs
at
A
A
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Marking device
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94573
2 DiodesAmericas@vishay.com
T
, T
J
Stg
R
DC operation 1.2
thJC
R
thCS
Case style I-PAK 20UT04
Case style D-PAK 20WT04FN
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-Jan-11
- 55 to 175 °C
°C/W
0.3
2g
0.07 oz.
0.01
0.1
1
10
0.00001
94573_04
0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
VS-20UT04, VS-20WT04FN
High Performance Schottky
Vishay Semiconductors
Generation 5.0, 20 A
100
TJ = 175 °C
10
TJ = 25 °C
1
- Instantaneous Forward Current (A)
F
I
94573_01
0 0.2 0.4 0.8 1.20.6 1.0 1.4 1.6
VFM - Forward Voltage Drop (V)
TJ = 125 °C
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
100
TJ = 175 °C
10
1
0.1
0.01
- Reverse Current (mA)
R
0.001
I
0.0001
94573_02
TJ = 150 °C
0 5 10 15 3025 403520 45
VR - Reverse Voltage (V)
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
1000
- Junction Capacitance (pF)
T
C
100
01020 4030515 3525 45
94573_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94573 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Jan-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics
thJC
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