Vishay VS-20MQ060NPbF Data Sheet
PRODUCT SUMMARY
Cathode Anode
SMA
Package SMA
I
F(AV)
V
R
V
at I
F
F
I
RM
max. 150 °C
T
J
Diode variation Single die
E
AS
Schottky Rectifier, 2.1 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
2.1 A
60 V
See Electrical table
7.5 mA at 125 °C
2.0 mJ
• Designed and qualified for industrial level
DESCRIPTION
The VS-20MQ060NPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
VS-20MQ060NPbF
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 2.1 A
60 V
tp = 5 μs sine 40 A
2 Apk, TJ = 125 °C 0.68 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20MQ060NPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AS
AR
50 % duty cycle at TC = 107 °C, rectangular waveform
On PC board 9 mm
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 10
TJ = 25 °C, IAS = 1 A, L = 4 mH 2.0 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
2
island (0.013 mm thick copper pad area)
Following any rated
load condition and with
rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
2.1 A
40
A
1.0 A
Document Number: 94592 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 26-Oct-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-20MQ060NPbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 2.1 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
2 A
1.5 A 0.71
Maximum forward voltage drop
See fig. 1
V
FM
1 A 0.63
(1)
2 A
1.5 A 0.63
1 A 0.57
Maximum reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
T
S
TJ = 25 °C
(1)
T
J
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 31 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 25 °C
T
J
T
= 125 °C
J
V
= Rated V
= 125 °C 7.5
R
R
R
0.78
0.68
0.5
0.45 V
86.8 m
10 000 V/μs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMA (similar D-64) 2H
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
R
thJA
DC operation 80 °C/W
- 55 to 150 °C
0.07 g
0.002 oz.
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94592
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 26-Oct-10
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