Vishay VS-20L15TPbF, VS-20L15T-N3 Data Sheet
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TO-220AC
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
I
max. 600 mA at 100 °C
RM
T
max. 125 °C
J
Diode variation Single die
E
AS
VS-20L15TPbF, VS-20L15T-N3
Schottky Rectifier, 20 A
FEATURES
Base
cathode
2
1
Cathode
20 A
15 V
See Electrical table
10 mJ
3
Anode
• 125 °C TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The Schottky rectifier module has been optimized for
ultra low forward voltage drop specifically for the
OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125
°C junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 20 A
15 V
tp = 5 μs sine 700 A
19 Apk, TJ = 125 °C (typical) 0.25 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20L15TPbF VS-20L15T-N3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
15 15 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 85 °C, rectangular waveform 20
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 330
TJ = 25 °C, IAS = 2 A, L = 6 mH 10 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
applied
V
RRM
700
2A
A
Revision: 26-Aug-11
1
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94165
VS-20L15TPbF, VS-20L15T-N3
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
19 A
Forward voltage drop
See fig. 1
V
FM
40 A - 0.52
(1)
19 A
40 A 0.37 0.50
Reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
F(TO)
TJ = 25 °C
(1)
T
J
TJ = TJ max.
t
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
T
Measured lead to lead 5 mm from package body 8 - nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 100 °C - 600
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Vishay Semiconductors
-0.41
0.25 0.33
-10
R
0.182 V
7.6 m
10 000 V/µs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
R
R
R
J
Stg
thJC
thCS
thJA
DC operation
See fig. 4
Mounting surface, smooth and greased
(for TO-220)
DC operation
2
(for D
PAK)
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Non-lubricated threads
Marking device Case style TO-220AC 20L15T
- 55 to 125
- 50 to 150
°C
1.5
0.50
°C/W
40
2g
0.07 oz.
6 (5)
kgf ·cm
(lbf · in)
Revision: 26-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94165
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.1
1
10
100
1000
0
3691215
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10 000
1000
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
100
5
20
10
15
TJ = 25 °C
1000
100
Current (A)
10
- Instantaneous Forward
F
I
1
0 1.40.2 0.4 0.6 0.8 1.0 1.2 1.6
VFM - Forward Voltage Drop (V)
T
= 125 °C
J
= 75 °C
T
J
TJ = 25 °C
VS-20L15TPbF, VS-20L15T-N3
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Revision: 26-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
P
DM
t
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Characteristics
thJC
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
1/t2
thJC
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
t
2
.
+ T
C
Document Number: 94165
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