Vishay VS-20ETS..PbF, VS-20ATS..PbF Data Sheet

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1

2

3

Cathode to

base

Anode Anode

VS-20ETS..PbFVS-20ATS..PbF

2

13

Anode

Cathode

Base

cathode

High Voltage Input Rectifier Diode, 20 A

VS-20ETS..PbF, VS-20ATS..PbF

Vishay Semiconductors

TO-220AC TO-220AB

PRODUCT SUMMARY

Package TO-220AC, TO-220AB

I

F(AV)

V

R

V

at I

F

F

I

FSM

max. 150 °C

T

J

Diode variation Single die, common anode

800 V to 1200 V

FEATURES

• Designed and qualified according to
JEDEC-JESD47

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in
identical package outlines

DESCRIPTION

The VS-20ETS..PbF, VS-20ATS..PbF rectifier high voltage
series has been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation technology
used has reliable operation up to 150 °C junction
temperature.

20 A

1.1 V

300 A

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

VOLTAGE RATINGS

PART NUMBER

VS-20ETS08PbF,
VS-20ATS08PbF

VS-20ETS12PbF,
VS-20ATS12PbF

Revision: 18-Aug-11

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions within your region: [e-mail]

= 55 °C, TJ = 125 °C

A

Sinusoidal waveform 20 A

10 A, TJ = 25 °C 1.0 V

, MAXIMUM

V

RRM

PEAK REVERSE VOLTAGE

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V

800 900

1200 1300

16.3 21 A

800/1200 V

300 A

- 40 to 150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

1

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V

I

RRM

AT 150 °C

mA

1

Document Number: 94341

VS-20ETS..PbF, VS-20ATS..PbF

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 20

10 ms sine pulse, rated V

RRM

10 ms sine pulse, no voltage reapplied 300

10 ms sine pulse, rated V

RRM

10 ms sine pulse, no voltage reapplied 442

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

20 A, TJ = 25 °C 1.1 V

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

Vishay Semiconductors

applied 250

applied 316

10.4 m

0.85 V

0.1

RRM

A

A

mA

2

s

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

DC operation 1.3

thJC

Mounting surface, smooth and greased 0.5

R

thCS

Case style TO-220AC

Case style TO-220AB

- 40 to 150 °C

°C/W

2 g

0.07 oz.

kgf · cm
(lbf · in)

20ETS08

20ETS12

20ATS08

20ATS12

Revision: 18-Aug-11

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Document Number: 94341

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

90

150

140

130

120

110

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

862 4 10 12

20

22

14 16 18

0

30°

60°

90°

120°

180°

R

thJC

(DC) = 1.3 °C/W

Conduction angle

Ø

5

0

30

25

20

15

10

Maxiumum Average Forward

Power Loss (W)

Average Forward Current (A)

8412

24

16 20

0

RMS limit

180°
120°

90°
60°
30°

TJ = 150 °C

Conduction angle

Ø

0

5

10

15

20

25

30

35

Maxiumum Average Forward

Power Loss (W)

Average Forward Current (A)

1051520

25

0

DC
180°
120°

90°

60°

30°

RMS limit

TJ = 150 °C

Ø

Conduction period

VS-20ETS..PbF, VS-20ATS..PbF

Vishay Semiconductors

Fig. 1 - Current Rating Characteristics

150

R

(DC) = 1.3 °C/W

140

130

120

110

Temperature (°C)

100

Maximum Allowable Case

90

0

thJC

30°

60°

90°

1051520

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

Conduction period

120°

180°

Ø

DC

25 30 35

Fig. 4 - Forward Power Loss Characteristics

300

250

200

150

Forward Current (A)

Peak Half Sine Wave

100

50

1

At any rated load condition and with
rated V

applied following surge.

RRM

Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

J

= 150 °C

Number of Equal Amplitude
Half Cycle Current Pulse (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

300

250

200

Maximum non-repetitive surge current
versus pulse train duration.

Initial T

= 150 °C

J

No voltage reapplied
Rated V

RRM

100

reapplied

Fig. 3 - Forward Power Loss Characteristics

Revision: 18-Aug-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

150

Forward Current (A)

Peak Half Sine Wave

100

50

0.01

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

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0.1

Document Number: 94341

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