Vishay VS-20ETS..PbF, VS-20ATS..PbF Data Sheet

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1

2

3

Cathode to

base

Anode Anode

VS-20ETS..PbFVS-20ATS..PbF

2

13

Anode

Cathode

Base

cathode

High Voltage Input Rectifier Diode, 20 A

VS-20ETS..PbF, VS-20ATS..PbF

Vishay Semiconductors

TO-220AC TO-220AB

PRODUCT SUMMARY

Package TO-220AC, TO-220AB

I

F(AV)

V

R

V

at I

F

F

I

FSM

max. 150 °C

T

J

Diode variation Single die, common anode

800 V to 1200 V

FEATURES

• Designed and qualified according to
JEDEC-JESD47

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in
identical package outlines

DESCRIPTION

The VS-20ETS..PbF, VS-20ATS..PbF rectifier high voltage
series has been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation technology
used has reliable operation up to 150 °C junction
temperature.

20 A

1.1 V

300 A

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

VOLTAGE RATINGS

PART NUMBER

VS-20ETS08PbF,
VS-20ATS08PbF

VS-20ETS12PbF,
VS-20ATS12PbF

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= 55 °C, TJ = 125 °C

A

Sinusoidal waveform 20 A

10 A, TJ = 25 °C 1.0 V

, MAXIMUM

V

RRM

PEAK REVERSE VOLTAGE

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V

800 900

1200 1300

16.3 21 A

800/1200 V

300 A

- 40 to 150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

1

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V

I

RRM

AT 150 °C

mA

1

Document Number: 94341

VS-20ETS..PbF, VS-20ATS..PbF

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 20

10 ms sine pulse, rated V

RRM

10 ms sine pulse, no voltage reapplied 300

10 ms sine pulse, rated V

RRM

10 ms sine pulse, no voltage reapplied 442

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

20 A, TJ = 25 °C 1.1 V

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

Vishay Semiconductors

applied 250

applied 316

10.4 m

0.85 V

0.1

RRM

A

A

mA

2

s

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

DC operation 1.3

thJC

Mounting surface, smooth and greased 0.5

R

thCS

Case style TO-220AC

Case style TO-220AB

- 40 to 150 °C

°C/W

2 g

0.07 oz.

kgf · cm
(lbf · in)

20ETS08

20ETS12

20ATS08

20ATS12

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90

150

140

130

120

110

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

862 4 10 12

20

22

14 16 18

0

30°

60°

90°

120°

180°

R

thJC

(DC) = 1.3 °C/W

Conduction angle

Ø

5

0

30

25

20

15

10

Maxiumum Average Forward

Power Loss (W)

Average Forward Current (A)

8412

24

16 20

0

RMS limit

180°
120°

90°
60°
30°

TJ = 150 °C

Conduction angle

Ø

0

5

10

15

20

25

30

35

Maxiumum Average Forward

Power Loss (W)

Average Forward Current (A)

1051520

25

0

DC
180°
120°

90°

60°

30°

RMS limit

TJ = 150 °C

Ø

Conduction period

VS-20ETS..PbF, VS-20ATS..PbF

Vishay Semiconductors

Fig. 1 - Current Rating Characteristics

150

R

(DC) = 1.3 °C/W

140

130

120

110

Temperature (°C)

100

Maximum Allowable Case

90

0

thJC

30°

60°

90°

1051520

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

Conduction period

120°

180°

Ø

DC

25 30 35

Fig. 4 - Forward Power Loss Characteristics

300

250

200

150

Forward Current (A)

Peak Half Sine Wave

100

50

1

At any rated load condition and with
rated V

applied following surge.

RRM

Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

J

= 150 °C

Number of Equal Amplitude
Half Cycle Current Pulse (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

300

250

200

Maximum non-repetitive surge current
versus pulse train duration.

Initial T

= 150 °C

J

No voltage reapplied
Rated V

RRM

100

reapplied

Fig. 3 - Forward Power Loss Characteristics

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150

Forward Current (A)

Peak Half Sine Wave

100

50

0.01

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

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0.1

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0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

Z

thJC

- Transient Thermal
Impedance (°C/W)

Steady state value
(DC operation)

Single pulse

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

VS-20ETS..PbF, VS-20ATS..PbF

Vishay Semiconductors

1000

TJ = 25 °C

100

10

Instantaneous Forward Current (A)

1

0

1.00.5 1.5 2.0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

TJ = 150 °C

2.5 3.0 3.5

4.0

Fig. 8 - Thermal Impedance Z

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Characteristics

thJC

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Document Number: 94341

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2 - Current rating (20 = 20 A)

4 - Package:

T = TO-220

S = Standard recovery rectifier

5

- Type of silicon:

6 - Voltage code x 100 = V

RRM

7 -

PbF = Lead (Pb)-free

08 = 800 V

12 = 1200 V

3 - Circuit configuration:

E = TO-220AC

A = TO-220AB

Device code

62 43 5 7

20 E T S 12 PbFVS-

1 - Vishay Semiconductors product

1

ORDERING INFORMATION TABLE

VS-20ETS..PbF, VS-20ATS..PbF

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95180

Part marking information www.vishay.com/doc?95181

Revision: 18-Aug-11

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TO-220AB, TO-220AC

DIMENSIONS FOR TO-220AB in millimeters and inches

A

Ø P

E

Q

D

D1

3241

(3)

CC

Detail B

(2)

L1

DD

C

L

H1

B

A

A1

Seating plane

A

Outline Dimensions

Vishay Semiconductors

E

H1

θ

View A - A

Thermal pad

D2

E1

A

Sheet 2

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

123

C

C

3 x b2 3 x b

Detail B

D

D

L1

MILLIMETERS INCHES

NOTES

SYMBOL

2 x e

MM

e1

c

Section C - C and D - D

0.015 ABC

b, b2

c1

b1, b3

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

C

Lead assignments

HEXFET

1. - Gate

2. - Drain

3. - Source

IGBTs, CoPAK

1. - Gate

2. - Collector

3. - Emitter

NOTES SYMBOL

A2

A 4.25 4.65 0.167 0.183 D2 12.19 12.88 0.480 0.507
A1 1.14 1.40 0.045 0.055 E 10.11 10.51 0.398 0.414 3
A2 2.56 2.92 0.101 0.115 E1 8.38 8.89 0.330 0.350

b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.96 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255
b3 1.15 1.73 0.045 0.068 L 13.52 14.02 0.532 0.552

c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
c2 0.31 1.14 0.012 0.045 Q 2.60 3.00 0.102 0.118

D 14.85 15.25 0.585 0.600 3  90° to 93° 90° to 93°
D1 8.38 9.02 0.330 0.355

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Dimension b1 and c1 apply to base metal only

(5)

Controlling dimensions: inches

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Outline Dimensions

3

DD

CC

21

Detail B

Detail B

View A - A

D

L1

D

123

CC

2 x b2 2 x b

θ

E1 (6)

b, b2

Base metal

c1 (4)

D2 (6)

H1

Thermal pad

E

b1, b3

Section C - C and D - D

Plating

(4)

c

B

A

A

A1

A

A2

C

Seating plane

(6) H1

C

L1

(2)

A

Q

D1

D

L3

L4

Ø P

(6)

E

e1

0.015 AB

MM

L

Vishay Semiconductors

TO-220AB, TO-220AC

DIMENSIONS FOR TO-220AC in millimeters and inches

SYMBOL

A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

A1 1.14 1.40 0.045 0.055 E1 8.38 8.89 0.330 0.350 6
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.96 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.15 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.188

MILLIMETERS INCHES

D2 12.19 12.88 0.480 0.507 6  90° to 93° 90° to 93°

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimensions: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Outline conforms are derived from the actual package outline

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NOTES

DIMENSIONS in millimeters and inches

(6)

E

(7)

E2

Q

(6)

D

D1

13

L3

L4

2

A

Ø P

0.014 AB

Detail B

L

MM

C

(6)

H1

(7)

TO-220AC

B

Seating

plane

A

A

A1

Outline Dimensions

Vishay Semiconductors

123

DL1D

H1

θ

E

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes
1 + 2 - Cathode

3 - Anode

CC

Detail B

Lead tip

SYMBOL

e1

MM

0.015 AB

c

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A

A2

View A - A

NOTES SYMBOL

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured

at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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