Vishay VS-20ETF..PbF Soft Recovery Series Data Sheet

TO-220AC

VS-20ETF..PbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery Rectifier Diode, 20 A

FEATURES

• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

APPLICATIONS

• Output rectification and freewheeling in inverters,
choppers and converters

• Input rectifications where severe restrictions on
conducted EMI should be met

cathode

1

Cathode

Base

2

3

Anode

PRODUCT SUMMARY

VF at 20 A < 1.31 V

I

FSM

V

RRM

355 A

800 to 1200 V

DESCRIPTION

The VS-20ETF..PbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.

The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

V

I

F(AV)

I

FSM

t

rr

V

T

RRM

F

J

Sinusoidal waveform 20

1 A, 100 A/μs 95 ns

20 A, TJ = 25 °C 1.31 V

Range - 40 to 150 °C

800 to 1200 V

355

A

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

VS-20ETF08PbF 800 900

VS-20ETF12PbF 1200 1300

REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

AT 150 °C

I

RRM

mA

6VS-20ETF10PbF 1000 1100

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

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Revision: 27-Apr-10 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A2√s

F(AV)

I

FSM

TC = 97 °C, 180° conduction half sine wave 20

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 355

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 635

applied 300

RRM

applied 450

RRM

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A

2

A

s

VS-20ETF..PbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

FM

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

F(TO)

RM

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

rr

rr

Reverse recovery charge Q

Snap factor S Typical 0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-220AC 20ETF08

T

, T

J

R

thJC

R

thJA

R

thCS

20 A, TJ = 25 °C 1.31 V

t

rr

Stg

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 6

J

IF at 20 Apk

25 A/μs
25 °C

V

= Rated V

R

RRM

400 ns

6.1 A

1.7 μC

11.88 mΩ

0.93 V

0.1

- 40 to 150 °C

DC operation 0.9

62

Mounting surface, smooth and greased 0.5

0.07 oz.

I

FM

t

rr

t

atb

dir

dt

I

RM(REC)

°C/W

2g

kgf · cm

(lbf · in)

mA

t

Q

rr

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Document Number: 94098

2 Revision: 27-Apr-10

VS-20ETF..PbF Soft Recovery Series

150

140

130

120

Temperature (°C)

110

Maximum Allowable Case

100

0

150

140

130

120

Temperature (°C)

110

Maximum Allowable Case

100

025

Fast Soft Recovery

Rectifier Diode, 20 A

20ETF.. Series

(DC) = 0.9 K/W

R

thJC

Ø

Conduction angle

30°

60°

90°

120°

180°

5

10 25

15

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

20ETF.. Series

(DC) = 0.9 K/W

R

thJC

60°

90°

30°

530

10 20

120°

15

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

20

Ø

Conduction period

180°

DC

35

Vishay High Power Products

35

30

25

20

15

Power Loss (W)

10

5

Maximum Average Forward

0

350

300

250

200

150

Forward Current (A)

Peak Half Sine Wave

100

50

Fig. 5 - Maximum Non-Repetitive Surge Current

180°
120°
90°
60°
30°

RMS limit

Conduction period

20ETF.. Series
T

= 150 °C

J

0

10 205

15

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with
rated V

20ETF.. Series

1 10 100

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Ø

25

35

30

25

20

15

Power Loss (W)

10

5

Maximum Average Forward

0

0

Fig. 3 - Forward Power Loss Characteristics

180°
120°
90°
60°
30°

RMS limit

Ø

Conduction angle

20ETF.. Series
T

= 150 °C

J

10 155

Average Forward Current (A)

20

25

400

350

300

250

200

150

Forward Current (A)

Peak Half Sine Wave

100

50

0.01 0.1 1

Maximum non-repetitive surge current
versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

20ETF.. Series

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

reapplied

RRM

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Revision: 27-Apr-10 3

VS-20ETF..PbF Soft Recovery Series

Vishay High Power Products

1000

100

TJ = 25 °C

= 150 °C

T

= 25 °C

J

J

20ETF.. Series

3.0 4.0

I

= 30 A

FM

= 20 A

I

FM

IFM = 10 A

I

= 5 A

FM

= 1 A

I

FM

10

Instantaneous Forward Current (A)

1

0.5 1.5 2.5 3.5

0 1.0 2.0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

- Maximum Reverse
t

0.7

0.6

0.5

0.4

0.3

0.2

Recovery Time (µs)

rr

0.1

20ETF.. Series
T

Fast Soft Recovery

Rectifier Diode, 20 A

6

5

4

3

2

- Maximum Reverse

rr

Recovery Charge (µC)

Q

1

0

Fig. 10 - Recovery Charge Characteristics, T

10

8

6

4

- Maximum Reverse

rr

Recovery Charge (µC)

2

Q

20ETF.. Series

= 25 °C

T

J

0 50 100 150 200

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

dI/dt - Rate of Fall of Forward Current (A/µs)

= 25 °C

J

20ETF.. Series

= 150 °C

T

J

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

0

0 50 100 150 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 8 - Recovery Time Characteristics, T

1.2

0.9

0.6

- Maximum Reverse

0.3

Recovery Time (µs)

rr

t

0

0 50 100 150 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, T

= 25 °C

J

20ETF.. Series

= 150 °C

T

J

IFM = 30 A

= 20 A

I

FM

I

= 10 A

FM

I

= 5 A

FM

= 1 A

I

FM

= 150 °C

J

0

0 50 100 150 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Recovery Charge Characteristics, T

25

20

15

10

- Maximum Reverse

rr

Recovery Current (A)

I

5

0

20ETF.. Series

= 25 °C

T

J

0 50 100 150 200

IFM = 30 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, T

= 150 °C

J

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

J

= 25 °C

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Document Number: 94098

4 Revision: 27-Apr-10

VS-20ETF..PbF Soft Recovery Series

Fast Soft Recovery

Vishay High Power Products

Rectifier Diode, 20 A

35

20ETF.. Series
T

= 150 °C

30

J

25

20

15

10

- Maximum Reverse

rr

Recovery Current (A)

I

5

0

0 50 100 150 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 13 - Recovery Current Characteristics, TJ = 150 °C

1

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

Steady state value

(DC operation)

0.1

Single pulse

0.01

- Transient Thermal Impedance (K/W)

thJC

Z

Fig. 14 - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Characteristics

thJC

20ETF.. Series

10.0001 0.001 0.01 0.1

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Revision: 27-Apr-10 5

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Document Number: 94098

6 Revision: 27-Apr-10

VS-20ETF..PbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 20 A

2 - Current rating (20 = 20 A)

3

- Circuit configuration:

E = Single diode

4 - Package:

- PbF = Lead (Pb)-free

T = TO-220AC

5 - Type of silicon:

F = Fast soft recovery rectifier

6 - Voltage ratings

7

08 = 800 V
10 = 1000 V
12 = 1200 V

1

- HPP product suffix

Device code

51324

67

VS- 20 E T F 12 PbF

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

TO-220AC

D

L3

D1

L4

Plating

A

Base metal

c1 (4)

B

Seating plane

A1

A2

View A - A

CC

E

Thermal pad

D2 (6)

E1 (6)

D

D

L1

A

H1

θ

A

123

3

DD

A

Ø P

Detail B

(2)

L1

L

MM

0.015 AB

b, b2

(6) H1

C

C

(6)

E

Q

21

CC

e1

c

SYMBOL

b1, b3

Section C - C and D - D

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

(4)

NOTES SYMBOL

2 x b2 2 x b

Detail B

MILLIMETERS INCHES

NOTES

A 3.56 4.82 0.140 0.190 E 9.66 10.66 0.380 0.420 3, 6
A1 0.51 1.40 0.020 0.055 E1 8.38 8.89 0.330 0.350 6
A2 2.04 2.92 0.080 0.115 e 2.54 BSC 0.100 BSC

b 0.38 1.01 0.015 0.040 e1 5.08 BSC 0.200 BSC
b1 0.38 0.96 0.015 0.038 4 H1 5.85 6.86 0.230 0.270 6
b2 1.15 1.77 0.045 0.070 L 12.70 14.73 0.500 0.580
b3 1.15 1.73 0.045 0.068 4 L1 3.55 3.96 0.140 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050

D 14.22 15.87 0.560 0.625 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.54 3.05 0.100 0.120
D2 12.19 12.88 0.480 0.507 6 θ 90° to 93° 90° to 93°

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimensions: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Outline conforms are derived from the actual package outline

Document Number: 95221 For technical questions concerning discrete products, contact: [e-mail]

www.vishay.com

Revision: 16-Nov-09 For technical questions concerning module products, contact: [e-mail]

1

Assembly
lot code

xxxxxx

V P119X

AC

TO-220AC

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 1 = 2001
Week 19
Line X

Part Marking Information

Vishay High Power Products

Example: This is a xxxxxx with
assembly lot code AC,
assembled on WW 19, 2001
in the assembly line “X”

Document Number: 95224 For technical questions concerning discrete products, contact: [e-mail]
Revision: 30-Oct-08 For technical questions concerning module products, contact: [e-mail]

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1

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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Revision: 18-Jul-08 1