Vishay VS-20CTQ150PbF, VS-20CTQ150-N3 Data Sheet

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Anode

13

2

Base

common

cathode

2

Common

cathode

Anode

TO-220AB

Schottky Rectifier, 2 x 10 A

PRODUCT SUMMARY

Package TO-220AB

I

F(AV)

V

R

V

at I

F

F

I

max. 5 mA at 125 °C

RM

T

175 °C

J

Diode variation Common cathode

E

AS

2 x 10 A

150 V

0.66 V

2.45 mJ

VS-20CTQ150PbF, VS-20CTQ150-N3

Vishay Semiconductors

FEATURES

• 175 °C TJ operation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance

• Guard ring for enhanced ruggedness and long
term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)

DESCRIPTION

The center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 20 A

150 V

tp = 5 μs sine 1030 A

10 Apk, TJ = 125 °C (per leg) 0.66 V

Range - 55 to 175 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-20CTQ150PbF VS-20CTQ150-N3 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

150 150 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average
forward current
See fig. 5

Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7

Non-repetitive avalanche energy per leg E

Repetitive avalanche current per leg I

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per leg

per device 20

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 154 °C, rectangular waveform

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 180

TJ = 25 °C, IAS = 0.7 A, L = 10 mH 2.45 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

1

maximum VA = 1.5 x VR typical

J

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Following any rated load
condition and with rated
V

applied

RRM

Document Number: 94164

10

1030

0.7 A

A

A

VS-20CTQ150PbF, VS-20CTQ150-N3

www.vishay.com

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

10 A

Maximum forward voltage drop per leg
See fig. 1

V

FM

20 A 0.90 1.0

(1)

10 A

20 A 0.73 0.77

Maximum reverse leakage current per leg
See fig. 2

Typical junction capacitance per leg C

Typical series inductance per leg L

I

RM

TJ = 25 °C

T

= 125 °C 2.7 5.0 mA

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 280 pF

T

Measured lead to lead 5 mm from package body -8.0nH

S

Maximum voltage rate of change dV/dt Rated V

R

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case per leg

Maximum thermal resistance,
junction to case per package

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-220AB 20CTQ150

, T

T

J

Stg

R

DC operation

thJC

R

thCS

Mounting surface, smooth and greased
(Only for TO-220)

Vishay Semiconductors

0.80 0.88

0.63 0.66

R

3.0 25 μA

- 10 000 V/μs

- 55 to 175 °C

2.0

1.0

°C/W

0.50

2g

0.07 oz.

kgf ·cm

(lbf ·in)

V

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1

10

I

F

-

Instantaneous

Forward Current (A)

V

FM

- Forward Voltage Drop (V)

0.4

0.8 1.4 1.8 2.01.61.00.6

0.2

100

1.2

TJ = 175 °C

T

J

= 25 °C

T

J

= 125 °C

I

R

- Reverse Current (mA)

VR - Reverse Voltage (V)

20

60 120

160

14080

400

100

0.0001

0.001

0.01

0.1

1

10

100

T

J

= 150 °C

T

J

= 125 °C

T

J

= 100 °C

T

J

= 175 °C

T

J

= 25 °C

T

J

= 75 °C

T

J

= 50 °C

10

100

1000

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

40

160

120

0

80

TJ = 25 °C

0.01

0.1

1

10

0.00001

0.0001

0.001 0.01

0.1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

1

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

VS-20CTQ150PbF, VS-20CTQ150-N3

Vishay Semiconductors

Fig. 1 - Maximum Forward Voltage Drop Characteristics

(Per Leg)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage (Per Leg)

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Fig. 4 - Maximum Thermal Impedance Z

thJC

3

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Characteristics (Per Leg)

Document Number: 94164

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I

F(AV)

- Average Forward Current (A)

2

612

16

1484

0

10

Allowable Lead Temperature (°C)

130

140

150

160

170

180

DC

See note (1)

Square wave (D = 0.50)
80 % rated V

R

applied

Allowable Power Loss (W)

I

F(AV)

- Average Forward Current (A)

612

15

30

9

0

1

2

3

4

5

6

7

8

9

10

DC

RMS limit

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

VS-20CTQ150PbF, VS-20CTQ150-N3

Vishay Semiconductors

Fig. 5 - Maximum Average Forward Current vs.

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

Revision: 26-Aug-11

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Allowable Lead Temperature

1000

- Non-Repetitive Surge Current (A)

100

FSM

I

10

t

At any rated load condition
and with rated V
following surge

100

- Square Wave Pulse Duration (µs)

p

RRM

applied

1000

10 000

Average Forward Current

Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration

Fig. 6 - Maximum Average Forward Dissipation vs.

L

High-speed

switch

Freewheel

diode

40HFL40S02

= 25 V

V

d

+

F(AV)

D.U.T.

Current
monitor

) x R

REV

x VFM at (I

IRFP460

R

= 25 Ω

g

Fig. 8 - Unclamped Inductive Test Circuit

;

thJC

/D) (see fig. 6);

F(AV)

R

4

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 94164

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Device code

62 43 5 7

20 C T Q 150 PbFVS-

1

2

- Current rating (20 = 20 A)

3

- Package:

- Circuit configuration:

C = Common cathode

T = TO-220

4

- Schottky “Q” series

5

- Voltage ratings (150 = 150 A)

6

7

-

1

- Vishay Semiconductors product

PbF = Lead (Pb)-free and RoHS compliant

-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free

Environmental digit

ORDERING INFORMATION TABLE

VS-20CTQ150PbF, VS-20CTQ150-N3

Vishay Semiconductors

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-20CTQ150PbF 50 1000 Antistatic plastic tube

VS-20CTQ150-N3 50 1000 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95222

Part marking information

TO-220AB PbF www.vishay.com/doc?95225

TO-220AB -N3 www.vishay.com/doc?95028

Revision: 26-Aug-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

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Document Number: 94164

DIMENSIONS in millimeters and inches

13

2

D

D1

H1

Q

13

2

C

C

D

D

3 x b23 x b

(b, b2)

b1, b3

(H1)

D2

Detail B

C

A

B

L

e1

Lead tip

E

E2

Ø P

0.014 AB

M M

0.015 AB

MM

Seating

plane

c

A2

A1

A

A

A

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

Conforms to JEDEC outline TO-220AB

(6)

(6)

(7)

(6)

(7)

e

2 x

L1

(2)

Detail B

Section C - C and D - D

View A - A

Base metal Plating

(4)

(4)

c1

c

(6)

Thermal pad

(E)

E1

(6)

Outline Dimensions

Vishay Semiconductors

TO-220AB

SYMBOL

A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7

b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147

D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimensions: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and
E1

Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 [e-mail]

NOTES SYMBOL

, [e-mail], [e-mail] 1

(7)

(8)

Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline

MILLIMETERS INCHES

NOTES

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Revision: 02-Oct-12

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