Vishay VS-20CTQ150PbF, VS-20CTQ150-N3 Data Sheet
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Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
Schottky Rectifier, 2 x 10 A
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
V
at I
F
F
I
max. 5 mA at 125 °C
RM
T
175 °C
J
Diode variation Common cathode
E
AS
2 x 10 A
150 V
0.66 V
2.45 mJ
VS-20CTQ150PbF, VS-20CTQ150-N3
Vishay Semiconductors
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 20 A
150 V
tp = 5 μs sine 1030 A
10 Apk, TJ = 125 °C (per leg) 0.66 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20CTQ150PbF VS-20CTQ150-N3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
150 150 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
Revision: 26-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
per leg
per device 20
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 154 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 180
TJ = 25 °C, IAS = 0.7 A, L = 10 mH 2.45 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
1
maximum VA = 1.5 x VR typical
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Following any rated load
condition and with rated
V
applied
RRM
Document Number: 94164
10
1030
0.7 A
A
A
VS-20CTQ150PbF, VS-20CTQ150-N3
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
10 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
20 A 0.90 1.0
(1)
10 A
20 A 0.73 0.77
Maximum reverse leakage current per leg
See fig. 2
Typical junction capacitance per leg C
Typical series inductance per leg L
I
RM
TJ = 25 °C
T
= 125 °C 2.7 5.0 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 280 pF
T
Measured lead to lead 5 mm from package body -8.0nH
S
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB 20CTQ150
, T
T
J
Stg
R
DC operation
thJC
R
thCS
Mounting surface, smooth and greased
(Only for TO-220)
Vishay Semiconductors
0.80 0.88
0.63 0.66
R
3.0 25 μA
- 10 000 V/μs
- 55 to 175 °C
2.0
1.0
°C/W
0.50
2g
0.07 oz.
kgf ·cm
(lbf ·in)
V
Revision: 26-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94164
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1
10
I
F
-
Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4
0.8 1.4 1.8 2.01.61.00.6
0.2
100
1.2
TJ = 175 °C
T
J
= 25 °C
T
J
= 125 °C
I
R
- Reverse Current (mA)
VR - Reverse Voltage (V)
20
60 120
160
14080
400
100
0.0001
0.001
0.01
0.1
1
10
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 175 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 50 °C
10
100
1000
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
40
160
120
0
80
TJ = 25 °C
0.01
0.1
1
10
0.00001
0.0001
0.001 0.01
0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-20CTQ150PbF, VS-20CTQ150-N3
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Revision: 26-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
thJC
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Characteristics (Per Leg)
Document Number: 94164
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