Vishay VS-20CTH03SPbF, VS-20CTH03-1PbF Data Sheet

A

VS-20CTH03SPbF, VS-20CTH03-1PbF

Vishay High Power Products

Hyperfast Rectifier, 2 x 10 A FRED Pt

VS-20CTH03SPbFVS-20CTH03-1PbF

Base

common

cathode

2

2

1

Common

node

cathode

D2PAK TO-262

3

Anode

PRODUCT SUMMARY

trr (maximum) 35 ns

I

F(AV)

V

R

1

Anode

common

cathode

Common

cathode

Base

2

2

2 x 10 A

300 V

3

Anode

®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION/APPLICATIONS

Vishay HPP’s 300 V series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current

Non-repetitive peak surge current I

Operating junction and storage temperatures T

per diode

RRM

I

F(AV)

FSM

, T

J

TC = 160 °C 10

TJ = 25 °C 120

Stg

300 V

Aper device 20

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94011 For technical questions, contact: [e-mail]
Revision: 11-Mar-10 1

,

V

BR

V

R

IR = 100 μA 300 - -

R

IF = 10 A - 1.05 1.25

F

I

= 10 A, TJ = 125 °C - 0.85 0.95

F

VR = VR rated - - 20

T

= 125 °C, VR = VR rated - 6 200

J

VR = 300 V - 30 - pF

T

Measured lead to lead 5 mm from package body - 8 - nH

S

V

μA

www.vishay.com

VS-20CTH03SPbF, VS-20CTH03-1PbF

Vishay High Power Products

Hyperfast Rectifier,

2 x 10 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35

= 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - - 30

I

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

F

T

= 25 °C

J

= 125 °C - 42 -

T

J

TJ = 25 °C - 2.4 -

T

= 125 °C - 5.6 -

J

TJ = 25 °C - 36 -

T

= 125 °C - 120 -

J

= 10 A

I

F

dI

/dt = 200 A/μs

F

= 200 V

V

R

-31-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case per diode

Weight

Mounting torque

Marking device

T

, T

J

Stg

--1.5°C/W

R

thJC

2

Case style D

Case style TO-262 20CTH03-1

PAK 20CTH03S

- 65 - 175 °C

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

kgf · cm

(lbf · in)

ns

A

nC

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 11-Mar-10

Document Number: 94011

VS-20CTH03SPbF, VS-20CTH03-1PbF

100

10

Current (A)

- Instantaneous Forward

F

I

1

0.4 0.6 0.8 1.0 1.2

TJ = 175 °C

= 125 °C

T

J

= 25 °C

T

J

1.4

1.6 1.8 2.0

VFM - Forward Voltage Drop (V)

Hyperfast Rectifier,

2 x 10 A FRED Pt

®

100

10

0.1

- Reverse Current (mA)

0.01

R

I

0.001

Vishay High Power Products

TJ = 175 °C

TJ = 150 °C

T

= 125 °C

1

50 100 150 200 250 300

J

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

100

- Junction Capacitance (pF)

T

C

10

TJ = 25 °C

0 50 100 150 200 250 300

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

D = 0.50

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1/t2

t

1

thJC

t

2

.

+ T

C

.

10

Document Number: 94011 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Mar-10 3