Vishay VS-20CTH03PbF, VS-20CTH03FPPbF Data Sheet
VS-20CTH03PbF, VS-20CTH03FPPbF
TO-220AB
TO-220 FULL-PAK
VS-20CTH03PbF VS-20CTH03FPPbF
Anode
1
3
2
Base
common
cathode
2
Common
cathode
Anode
Anode
1
3
2
Common
cathode
Anode
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
PRODUCT SUMMARY
Package TO-220AB, TO-220FP
I
F(AV)
V
R
at I
V
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
2 x 10 A
300 V
1.25 V
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 qualified (TO-220)
• Designed and qualified for industrial level (TO-220FP)
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
= 2500 V
INS
RMS
)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94010 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
RRM
per diode
(FULL-PAK) per diode T
per device 20
,
V
BR
V
R
IR = 100 μA 300 - -
R
IF = 10 A - 1.05 1.25
F
I
= 10 A, TJ = 125 °C - 0.85 0.95
F
VR = VR rated - - 20
T
= 125 °C, VR = VR rated - 6 200
J
VR = 300 V - 30 - pF
T
Measured lead to lead 5 mm from package body - 8 - nH
S
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
I
F(AV)
FSM
, T
J
Stg
300 V
TC = 160 °C
= 135 °C
C
TJ = 25 °C 120
10
- 65 to 175 °C
www.vishay.com/doc?91000
A
V
μA
VS-20CTH03PbF, VS-20CTH03FPPbF
1
10
100
0.4 0.6 21.4
1
1.8
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
1.61.20.8
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
1
10
100
50 100 200 250 300
0.001
VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
150
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = 50 °C
TJ = 75 °C
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
= 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 42 -
T
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 5.6 -
J
= 10 A
I
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
TJ = 25 °C - 36 -
T
= 125 °C - 120 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDTIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
(FULL-PAK) per diode - - 3.9
Marking device
per diode
T
, T
J
Stg
R
thJC
Mounting surface, flat, smooth
and greased
Case style TO-220AB 20CTH03
Case style TO-220 FULL-PAK 20CTH03FP
®
-31-
- 65 - 175 °C
--1.5
ns
A
nC
°C/W
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Reverse Voltage
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11
This datasheet is subject to change without notice.
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VS-20CTH03PbF, VS-20CTH03FPPbF
100
1000
0 100 200 250 300
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
15050
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
10 1
Hyperfast Rectifier, 2 x 10 A FRED Pt
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
®
Vishay Semiconductors
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10 1
Fig. 5 - Maximum Thermal Impedance Z
Document Number: 94010 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
Characteristics (FULL-PAK)
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
www.vishay.com/doc?91000
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