Vishay VS-1N5820, VS-1N5820-M3 Data Sheet
www.vishay.com
C-16
PRODUCT SUMMARY
Package DO-201AD (C-16)
I
F(AV)
V
R
V
at I
F
F
I
max. 20 mA at 100 °C
RM
T
max. 150 °C
J
Diode variation Single die
E
AS
VS-1N5820, VS-1N5820-M3
Schottky Rectifier, 3.0 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode Anode
3 A
20 V
See Electrical table
See Electrical table
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-1N5820... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 3.0 A
20 V
tp = 5 μs sine 450 A
3 Apk, TJ = 25 °C 0.475 V
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-1N5820 VS-1N5820-M3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
20 20 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current at T
= 25 °C
J
F(AV)
I
FSM
50 % duty cycle at TL = 114 °C, rectangular waveform
With cooling fins
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 90
Following any rated load
condition and with rated
V
applied
RRM
3.0
450
A
Revision: 11-Oct-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93257
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-1N5820, VS-1N5820-M3
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
3 A
RM
FM
(1)
9.4 A 0.49 0.85
TJ = 25 °C
(1)
T
S
T
= 100 °C 8.1 20
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 350 - pF
Measured lead to lead 5 mm from package body 9.0 - nH
Maximum forward voltage drop V
Maximum reverse leakage current I
Typical junction capacitance C
Typical series inductance L
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style C-16 1N5820
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
, T
T
J
Stg
R
thJL
R
thJA
With fin 20 x 20 (0.79 x 0.79) 1.0 thick 34
DC operation
Without cooling fin
Vishay Semiconductors
0.41 0.475
0.05 2.0
R
- 10 000 V/µs
- 65 to 150 °C
°C/W
80
1.2 g
0.042 oz.
V
mA
Revision: 11-Oct-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93257
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