Vishay VS-19TQ015SPbF Data Sheet
D2PAK
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 19 A
FEATURES
N/C
Base
cathode
1
2
3
Anode
19 A
15 V
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
• High purity, high temperature epoxy
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
The VS-19TQ015SPbF Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
VS-19TQ015SPbF
Vishay High Power Products
term reliability
encapsulation for enhanced mechanical
strength and moisture resistance
260 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 19 A
15 V
tp = 5 μs sine 700 A
19 Apk, TJ = 75 °C 0.32 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-19TQ015SPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
15 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
50 % duty cycle at TC = 80 °C, rectangular waveform 19 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 330
TJ = 25 °C, IAS = 1.50 A, L = 6 mH 6.75 mJ
AS
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 3 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
700
A
1.50 A
Document Number: 94152 For technical questions, contact: diodestech@vishay.com
Revision: 12-Mar-10 1
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VS-19TQ015SPbF
Vishay High Power Products
Schottky Rectifier, 19 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
19 A
FM
19 A
38 A 0.46
(1)
V
38 A 0.43
T
= 25 °C
J
= 75 °C
T
J
0.36
0.32
TJ = 100 °C, VR = 12 V 465
= 100 °C, VR = 5 V 285
T
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance C
Typical series inductance L
(1)
I
RM
T
S
Maximum voltage rate of change dV/dt Rated V
J
T
= 25 °C
J
= 100 °C 522
T
J
V
= Rated V
R
R
10.5
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 2000 pF
Measured lead to lead 5 mm from package body 8.0 nH
R
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
J
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased 0.50
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
2
PAK 19TQ015S
- 55 to 125
- 55 to 150
1.50
2g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94152
2 Revision: 12-Mar-10
VS-19TQ015SPbF
1000
100
10
Current (A)
1
- Instantaneous Forward
F
I
0.1
0 0.4 0.6 1.0 1.2 1.4
0.2 0.8
V
- Forward Voltage Drop (V)
FM
TJ = 100 °C
= 75 °C
T
J
= 25 °C
T
J
Schottky Rectifier, 19 A
1000
100
10
- Reverse Current (mA)
R
I
0.1
Vishay High Power Products
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
1
05 15
TJ = 25 °C
V
- Reverse Voltage (V)
R
10
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
TJ = 25 °C
1000
- Junction Capacitance (pF)
T
C
100
5
010152025
V
- Reverse Voltage (V)
R
30
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
0.1
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
DM
t
1
1/t2
thJC
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
2
.
+ T
C
.
Document Number: 94152 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 12-Mar-10 3
VS-19TQ015SPbF
Vishay High Power Products
105
19TQ015
(DC) = 1.50 °C/W
R
100
95
90
85
Allowable Case Temperature (°C)
80
03010
51520
I
- Average Forward Current (A)
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
thJC
DC
25
1000
Schottky Rectifier, 19 A
10
8
6
4
2
Average Power Loss (W)
0
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
0
I
828
4
- Average Forward Current (A)
F(AV)
12
16 20
24
Fig. 6 - Forward Power Loss Characteristics
At any rated load condition
and with rated V applied
following surge
- Non-Repetitive Surge Current (A)
100
FSM
I
10
RRM
100
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
Current
monitor
IRFP460
= 25 Ω
R
g
Fig. 8 - Unclamped Inductive Test Circuit
1000
High-speed
Freewheel
diode
40HFL40S02
switch
10 000
V
= 25 V
d
+
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94152
4 Revision: 12-Mar-10
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