Vishay VS-150U(R).. Series Data Sheet

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Standard Recovery Diodes

DO-205AA (DO-8)

PRODUCT SUMMARY

I

F(AV)

Package DO-205AA (DO-8)

Circuit configuration Single diode

(Stud Version), 150 A

FEATURES

• Diffused diode

• High voltage ratings up to 1200 V

• High surge current capabilities

• Stud cathode and stud anode version

• Hermetic metal case

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•Welders

• Power supplies

• Machine tool controls

150 A

• High power drives

• Medium traction applications

• Battery charges

• Freewheeling diodes

VS-150U(R).. Series

Vishay Semiconductors

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

T

J

T

C

50 Hz 3000

60 Hz 3140

50 Hz 45

60 Hz 41

Range 600 to 1200 V

150 A

125 °C

235

-40 to 180 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-150U(R)..

, MAXIMUM REPETITIVE

V

VOLTAGE

CODE

60 600 700

80 800 900

100 1000 1100

120 1200 1300

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

A

kA2s

mA

15

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VS-150U(R).. Series

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 
at case temperature

Maximum RMS forward current I

I

F(RMS)

Maximum peak, one cycle forward,
non-repetitive surge current

2

Maximum I

t for fusing I2t

Slope resistance r

Threshold voltage V

Maximum forward voltage drop V

F(AV)

I

FSM

F(T0)

180° conduction, half sine wave

DC at 110 °C 235

t = 10 ms

t = 8.3 ms 3140

t = 10 ms 45

No voltage 
reapplied

Sinusoidal half wave,
initial T

t = 8.3 ms 41

TJ = TJ maximum 0.97 m

f

Ipk = 600 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.47

FM

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and storage
temperature range

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

Maximum allowed
mounting torque + 0 - 20 %

minimum Not lubricated threads 17

maximum Lubricated threads 14.5

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet DO-205AA (DO-8)

T

, T

J

Stg

thJC

thCS

DC operation 0.3

Mounting surface, smooth, flat and greased 0.1

Vishay Semiconductors

150 A

125 °C

3000

= TJ maximum

J

0.80

-40 to 180 °C

A

kA2s

V

K/W

N · m

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.031 0.023

120° 0.038 0.040

90° 0.048 0.053

= TJ maximum K/W

T

J

60° 0.071 0.075

30° 0.120 0.121

Note

• The table above shows the increment of thermal resistance R

Revision: 25-Nov-13

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when devices operate at different conduction angles than DC

thJC

2

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VS-150U(R).. Series

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

80

100

120

140

160

180

0 50 100 150 200

30°

60°

90°

120°

180°

Conduction Angle

150U(R)
RthJC (DC) = 0.3 K/W

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

80

100

120

140

160

180

0 40 80 120 160 200

30°

60°

90°

180°

DC

120°

150U(R)

RthJC (DC) = 0.3 K/W

Conduction Period

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Maximum Average Forward Power Loss (W)

0

50

100

150

200

250

300

05010015020

RMS Limit

Conduction Angle

180°

120°

90°

60°

30°

150U(R)
Tj = 180°C

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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Vishay Semiconductors

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RthSA =0.05 K/W - Delta R

0.2 K/W

0.4 K/W

0.6 K/W

1.2 K/W

80 100120140160180

0

Fig. 3 - Forward Power Loss Characteristics

300

180°

250

120°

90°

200

60°

30°

150

100

50

Maximum Average Forward Power Loss (W)

0

0 50 10015020025030

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

RMS Limit

DC

Conduction Period

150U(R) Series
Tj = 180°C

RthSA =0.05 K/W - Delta R

0.2 K/W

0.4 K/W

0.6 K/W

0.8
K/W

1.2 K/W

0

80 100120140160180

Fig. 4 - Forward Power Loss Characteristics

3

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VS-150U(R).. Series

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave Forward Current (A)

500

1000

1500

2000

2500

3000

3500

11010

Per Junction

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Initial Tj = 180°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Pulse Train Duration(s)

Peak Half Sine Wave On-state Current (A)

500

1000

1500

2000

2500

3000

3500

4000

0.01 0.1 1

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Per Junction

Of Conduction May Not Be Maintained.

Initial T j = 180°C

No Voltage Reapplied

Rated V rrm Reapplied

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0

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

Vishay Semiconductors

1000

100

Tj = 25°C

Instantaneous Forward Current (A)

10

0.5 1 1.5 2 2.5 3

Instantaneous Forward Voltage (V)

Tj = 180°C

Fig. 7 - Forward Voltage Drop Characteristics

1

(K/W)

thJC

Steady State Value

RthJC = 0.3 K/W

(DC Operation)

0.1

150U(R)

0.01

Transient Thermal Impedance Z

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristic

thJC

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Device code

- 15 = Essential part number

- 0 = Standard device

- U = Stud normal polarity (cathode to stud)

- None = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

- Voltage code x 10 = V

RRM

(see Voltage Ratings table)

- Diffused diode

- L = Stud base 1/2"-20UNF-2A threads

None = Stud base 3/8"-24UNF-2A threads

Note: For metric device M12 x 1.75 contact factory

15 0 U R 120 D L

2

3

4

5

6

7

8

51 32 4 6 7 8

1

- Vishay Semiconductors product

VS-

ORDERING INFORMATION TABLE

VS-150U(R).. Series

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95315

Revision: 25-Nov-13

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Document Number: 93490

DO-205AA (DO-8) for 150U(R) Series

16.5 (0.65)
MAX.

6.5 (0.26) MIN.

Ø 8.5 (0.33) NOM.

Glass-metal seal

3/8"-24UNF-2A

(For metric device M12 x 1.75)

(1)

C.S. 16 mm

2

(0.015 s.i.)

Ø 23.5 (0.93) MAX.

2.6 (0.10) MAX.

35 (1.38)

MAX.

17 (0.69)

MAX.

24 (0.94)

MAX.

55 (2.16) MIN.

165 (6.49) MIN

170 (6.69) MAX.

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Note

(1)

For stud base 1/2"-20UNF-2A threads; refer to “Ordering Information Table”

Document Number: 95315 For technical questions, contact: [e-mail]
Revision: 02-Jul-08 1

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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