Vishay VS-110RKI...PbF Series, VS-111RKI...PbF Series Data Sheet

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TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

Package TO-209AC (TO-94)

Diode variation Single SCR

400 V, 800 V, 1200 V

-40 °C to 140 °C

VS-110RKI...PbF, VS-111RKI...PbF Series

Phase Control Thyristors

(Stud Version), 110 A

FEATURES

• High current and high surge ratings

• Hermetic ceramic housing

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

110 A

1.57 V

80 mA

• AC controllers










Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 2080

60 Hz 2180

50 Hz 21.7

60 Hz 19.8

Typical 110 μs

110 A

90 °C

172

400 to 1200 V

-40 to 140 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

VS-110RKI
VS-111RKI

V

VOLTAGE

CODE

40 400 500

120 1200 1300

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM

mA

2080 800 900

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VS-110RKI...PbF, VS-111RKI...PbF Series

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 217 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave

DC at 83 °C case temperature 172

t = 10 ms

t = 8.3 ms 2180

t = 10 ms

t = 8.3 ms 1830

t = 10 ms

t = 8.3 ms 19.8

t = 10 ms

t = 8.3 ms 14.0

(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I

No voltage
reapplied

100 % V

RRM



reapplied

No voltage
reapplied

100 % V

RRM 

reapplied

< I <  x I

T(AV)

), TJ = TJ maximum 1.02

T(AV)

< I <  x I

T(AV)

), TJ = TJ maximum 1.70

T(AV)

Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.57 V

TJ = 25 °C, anode supply 6 V resistive load

Vishay Semiconductors

2080

1750

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 0.82

T(AV)

), TJ = TJ maximum 2.16

T(AV)

21.7

15.3

110 A

90 °C

kA2s

m

200

400

mA

A

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 , t
T

= TJ maximum, anode voltage  80 % V

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/μs
V

= 50 V, dV/dt = 20 V/μs, gate 0 V 25 

R

 1 μs

r

, TJ = 25 °C

DRM

300 A/μs

1

μs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of 
off-state voltage

Maximum peak reverse and 
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum rated V

DRM/VRRM

DRM

500 V/μs

applied 20 mA

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VS-110RKI...PbF, VS-111RKI...PbF Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

GM

G(AV)

GM

GT

GT

TJ = TJ maximum, tp  5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3.0

TJ = TJ maximum, tp  5 ms

GM

GM

TJ = - 40 °C

= 25 °C 80 120

J

= 140 °C 40 -

T

J

TJ = - 40 °C 2.5 -

= 25 °C 1.6 2

J

T

= 140 °C 1 -

J

Maximum required gate
trigger/current/voltage are
the lowest value which will 
trigger all units 12 V anode
to cathode applied

Vishay Semiconductors

VALUES

TYP. MAX.

3.0 A

20

10

180 -

UNITS

W

V

mAT

VT

DC gate current not to trigger I

DC gate voltage not to trigger V

GD

GD

TJ = TJ maximum

Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated V
cathode applied

anode to

DRM

6.0 mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.27

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.043 0.031

120° 0.052 0.053

90° 0.066 0.071

T

60° 0.096 0.101

30° 0.167 0.169

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

-40 to 140

-40 to 150

15.5

(137)

14

(lbf · in)

(120)

= TJ maximum K/W

J

°C

K/W

N · m

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VS-110RKI...PbF, VS-111RKI...PbF Series

Maximum Allowable Case

Temperature (°C)

Average On-State Current (A)

8040 6020 100

120

0

140

130

120

110

100

90

80

94379_01

30°

60°

90°

120°

180°

Ø

Conduction angle

R

thJC

(DC) = 0.27 K/W

Maximum Allowable Case

Temperature (°C)

Average On-State Current (A)

20 40 10060 14012080 160 1800

70

80

90

100

110

120

140

130

94379_02

30°

60°

DC

90°

120°

180°

Conduction period

Ø

R

thJC

(DC) = 0.27 K/W

Maximum Average On-State

Power Loss (W)

Maximum Allowable

Ambient Temperature (°C)

20 40 8060 100 120 140

0

220

200

180

160

120

80

40

20

140

100

60

0

94379_04b

2 K/W

4 K/W

5 K/W

1.5 K/W

1 K/W

0.8 K/W

0.6 K/W

R

thSA

= 0.3 K/W - ΔR

www.vishay.com

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Vishay Semiconductors

160

140

120

100

80

60

Power Loss (W)

40

20

Maximum Average On-State

0

06020

94379_03a

180°
120°

90°
60°
30°

40 80 100 120

RMS limit

Ø

Conduction angle

TJ = 140 °C

Average On-State Current (A)

160

140

120

100

80

60

Power Loss (W)

40

20

Maximum Average On-State

0

94379_03b

R

0.6 K/W

0.8 K/W

1 K/W

1.5 K/W

2 K/W

4 K/W

5 K/W

0

20 6040 80 100 120 140

thSA

= 0.3 K/W - ΔR

Maximum Allowable

Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

220

200

180

160

140

120

100

80

Power Loss (W)

60

40

Maximum Average On-State

20

0

94379_04a

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DC
180°
120°

90°

60°

30°

0

20

40

60 140 180

80 120

Average On-State Current (A)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RMS limit

Ø

Conduction period

TJ = 140 °C

100 160

Fig. 4 - On-State Power Loss Characteristics

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Peak Half Sine Wave

On-State Current (A)

Number of Equal Amplitude Half

Cycle Current Pulses (N)

10 1001

800

1000

1200

1800

1600

1400

2000

94379_05

At any rated load condition and with

rated V

RRM

applied following surge.

Initial T

J

= 140 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Instantaneous On-State Current (A)

Instantaneous On-State Voltage (V)

012345

1

100

10

10 000

1000

94379_07

TJ = 140 °C

TJ = 25 °C

VS-110RKI...PbF, VS-111RKI...PbF Series

Vishay Semiconductors

2500

2000

1500

1000

On-State Current (A)

Peak Half Sine Wave

500

94379_06

Maximum non-repetitive surge current

versus pulse train duration. Control of

conduction may not be maintained.

No voltage reapplied

Rated V

0.1 1010.01

Initial T

RRM

= 140 °C

J

reapplied

Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - On-State Voltage Drop Characteristics

1

Steady state value

= 0.27 K/W

R

thJC

(DC operation)

0.1

0.01

- Transient Thermal
Impedance (K/W)

thJC

Z

94379_08

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0.001

0.0001 0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristic

thJC

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0.1

1

10

100

0.001

94379_09

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

0.01 0.1 1 10 1000100

(1) PGM = 12 W, tp = 5 ms
(2) P

GM

= 30 W, tp = 2 ms

(3) P

GM

= 60 W, tp = 1 ms

(4) P

GM

= 200 W, tp = 300 μs

Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t

r

≤ 0.5 μs, tp ≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t

r

≤ 1 μs, tp ≥ 6 μs

(b)

(a)

T

J

= 25 °C

T

J

= 140 °C

T

J

= 40 °C

V

GD

I

GD

(1) (2) (3) (4)

Frequency limited by P

G(AV)

ORDERING INFORMATION TABLE

VS-110RKI...PbF, VS-111RKI...PbF Series

Vishay Semiconductors

Fig. 9 - Gate Characteristics

Device code

11VS- 0 RKI 120 PbF

1

32 4

5 6

1 - Vishay Semiconductors product

2

3

-I

-

rated average output current (rounded/10)

T(AV)

0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

- Thyristor4

- Voltage code x 10 = V

5

6

-

None = Standard production

(see Voltage Ratings table)

RRM

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95003

Revision: 11-Mar-14

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Document Number: 94379

TO-209AC (TO-94) for 110RKI and 111RKI Series

Fast-on terminals

C.S. 0.4 mm

2

White shrink

Red shrink

Red cathode

Red silicon rubber

Ø 4.3 (0.17)

10 (0.39) MAX.

(0.0006 s.i.)

Ceramic housing

Ø 8.5 (0.33)

16.5 (0.65) MAX.

Ø 22.5 (0.88) MAX.

C.S. 16 mm

2

(0.025 s.i.)

Flexible lead

2.6 (0.10) MAX.

29.5 (1.16) MAX.

1/2"-20UNF-2A

SW 27

9.5 (0.37) MIN.

White gate

AMP. 280000-1

REF-250

20 (0.79) MIN.

24 (0.94)

MAX.

21 (0.83)

MAX.

157 (6.18)

170 (6.69)

55 (2.16)

MIN.

215 ± 10

(8.46 ± 0.39)

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Note

• For metric device: M12 x 1.75 contact factory

Document Number: 95363 For technical questions, contact: [e-mail]

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Revision: 25-Sep-08 1

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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

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