Vishay VS-10ETF..SPbF Soft Recovery Series Data Sheet

VS-10ETF..SPbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery Rectifier Diode, 10 A

Base

common

cathode

+

2

FEATURES

• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C

• Compliant to RoHS directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21
definition

• Designed and qualified for industrial level

APPLICATIONS

• Output rectification and freewheeling in inverters,

D2PAK (SMD-220)

1

--

Anode

3
Anode

choppers and converters

• Input rectifications where severe restrictions on
conducted EMI should be met

PRODUCT SUMMARY

V

RRM

V

at 10 A < 1.2 V

F

t

rr

200 V to 600 V

50 ns

DESCRIPTION

The VS-10ETF..SPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.

The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

V

I

F(AV)

I

FSM

t

rr

V

T

RRM

F

J

Sinusoidal waveform 10

1 A, 100 A/μs 50 ns

10 A, TJ = 25 °C 1.2 V

Range - 40 to 150 °C

200 to 600 V

150

A

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

VS-10ETF02SPbF 200 300

VS-10ETF06SPbF 600 700

REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

2VS-10ETF04SPbF 400 500

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

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Revision: 26-Apr-10 1

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1125 A2√s

F(AV)

I

FSM

TC = 128 °C, 180° conduction half sine wave 10

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 160

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 160

applied 150

RRM

applied 112.5

RRM

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A

2

A

s

VS-10ETF..SPbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

rr

rr

Reverse recovery charge Q

Snap factor S 0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance
junction to case

Maximum thermal resistance
junction to ambient (PCB mount)

Soldering temperature T

Approximate weight

Marking device Case style D

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.

T

, T

J

R

thJC

R

thJA

S

10 A, TJ = 25 °C 1.2 V

12.7 mΩ

1.25 V

0.1

I

FM

t

rr

dir

dt

- 40 to 150 °C

rr

Stg

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 2.0

J

IF at 10 Apk

25 A/μs
25 °C

V

= Rated V

R

145 ns

2.75 A

0.32 μC

RRM

DC operation 1.5

(1)

40

240 °C

2g

0.07 oz.

10ETF02S

2

PAK (SMD-220)

10ETF04S

10ETF06S

mA

I

RM(REC)

°C/W

t

Q

rr

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Document Number: 94091

2 Revision: 26-Apr-10

VS-10ETF..SPbF Soft Recovery Series

150

145

140

135

130

Temperature (°C)

125

Maximum Allowable Case

120

0

Fig. 1 - Current Rating Characteristics

150

145

140

135

Fast Soft Recovery

Rectifier Diode, 10 A

10ETF..S Series

(DC) = 1.5 °C/W

R

thJC

Ø

Conduction angle

120°

60°

30°

28

4

Average Forward Current (A)

90°

6

10ETF..S Series

(DC) = 1.5 °C/W

R

thJC

Conduction period

180°

10 12

Ø

Vishay High Power Products

20

10ETF..S Series

= 150 °C

T

J

16

12

RMS limit

8

30°

Power Loss (W)

4

Maximum Average Forward

0

0

48

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

160

140

120

100

At any rated load condition and with
rated V

applied following surge.

RRM

90°

120°

60°

Conduction period

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

12

180°

DC

Ø

16

130

Temperature (°C)

125

Maximum Allowable Case

120

010

16

14

12

10

8

6

Power Loss (W)

4

Maximum Average Forward

2

0

0

Fig. 3 - Forward Power Loss Characteristics

60°

120°

30°

212

48 14

90°

6

DC

180°

16

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

120°

90°

RMS limit

2

60°

30°

Conduction angle

10ETF..S Series

= 150 °C

T

J

46

180°

Ø

8

10

Average Forward Current (A)

80

Forward Current (A)

Peak Half Sine Wave

60

10ETF..S Series

40

1 10 100

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

180

Maximum non-repetitive surge current

160

140

120

100

80

Forward Current (A)

Peak Half Sine Wave

60

40

0.01 0.1 1

versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

10ETF..S Series

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

reapplied

RRM

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Revision: 26-Apr-10 3

VS-10ETF..SPbF Soft Recovery Series

Vishay High Power Products

100

10ETF..S Series

TJ = 150 °C

= 25 °C

T

10

Instantaneous Forward Current (A)

1

0.5 1.0 1.5 2.0 2.5 3.0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

0.20

0.15

0.10

- Maximum Reverse

0.05

Recovery Time (µs)

rr

t

10ETF..S Series

= 25 °C

T

J

0

0 40 80 120 160 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 8 - Recovery Time Characteristics, T

J

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 2 A

IFM = 1 A

Fast Soft Recovery

Rectifier Diode, 10 A

= 25 °C

J

1.4

- Maximum Reverse

rr

Q

10ETF..S Series

= 25 °C

T

J

1.2

1.0

0.8

0.6

0.4

Recovery Charge (µC)

0.2

0

0 40 80 120 160 200

IFM = 20 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 10 - Recovery Charge Characteristics, T

2.5

- Maximum Reverse

rr

Q

10ETF..S Series

= 150 °C

T

J

2.0

1.5

1.0

Recovery Charge (µC)

0.5

0

0 40 80 120 160 200

IFM = 20 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Recovery Charge Characteristics, T

IFM = 10 A

IFM = 5 A

IFM = 2 A

IFM = 1 A

IFM = 10 A

IFM = 5 A

IFM = 2 A

IFM = 1 A

= 25 °C

J

= 150 °C

J

0.4
10ETF..S Series

= 150 °C

T

J

0.3

IFM = 20 A

IFM = 10 A

IFM = 1 A

- Maximum Reverse

rr

t

0.2

0.1

Recovery Time (µs)

0

0 40 80 120 160 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, T

IFM = 5 A

IFM = 2 A

= 150 °C

J

15

12

9

6

- Maximum Reverse
Recovery Current (A)

rr

3

I

0

10ETF..S Series

= 25 °C

T

J

0 40 80 120 160 200

IFM = 20 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, T

IFM = 10 A

IFM = 5 A

IFM = 2 A

IFM = 1 A

= 25 °C

J

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Document Number: 94091

4 Revision: 26-Apr-10

VS-10ETF..SPbF Soft Recovery Series

Fast Soft Recovery

Vishay High Power Products

Rectifier Diode, 10 A

20

10ETF..S Series

= 150 °C

T

J

16

12

8

- Maximum Reverse
Recovery Current (A)

rr

4

I

0

0 40 80 120 160 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 13 - Recovery Current Characteristics, TJ = 150 °C

10

1

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 2 A

IFM = 1 A

0.1

0.01

Single pulse

0.001

- Transient Thermal Impedance (°C/W)

thJC

Z

Fig. 14 - - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Characteristics

thJC

Steady state value

(DC operation)

10ETF..S Series

100.001 0.01 0.1 1

Document Number: 94091 For technical questions, contact: [e-mail]

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Revision: 26-Apr-10 5

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Document Number: 94091

6 Revision: 26-Apr-10

VS-10ETF..SPbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 10 A

2 - Current rating (10 = 10 A)

3 - Circuit configuration:

E = Single diode

4

- Package:

T = D

2

PAK (TO-220AC)

5 - Type of silicon:

F = Fast soft recovery rectifier

6 - Voltage code x 100 = V

RRM

7 - S = Surface mountable

- PbF = Lead (Pb)-free

8 -

None = Tube

TRR = Tape and reel (right oriented)

TRL = Tape and reel (left oriented)

9

02 = 200 V
04 = 400 V
06 = 600 V

1 - HPP product suffix

Device code

51 3246789

VS- 10 E T F 06 S TRL PbF

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

D2PAK

Conforms to JEDEC outline D

(2)(3)

E

(3)

L1

D

L2

2 x

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

4

132

BB

e

2

H

2 x b2

2 x b

0.010

PAK (SMD-220)

A

Detail A

(2)

C

MM

A

Lead tip

B

A

c2

AA

A

c

M

± 0.004

B

Gauge

0° to 8°

plane

L3

B

L

L4

Detail “A”

Rotated 90 °CW

Scale: 8:1

(E)

E1

View A - A

A1

(3)

(D1)

17.90 (0.70)

15.00 (0.625)

2.32

(0.08)

Plating

Seating

plane

2.64 (0.103)

2.41 (0.096)

(3)

H

B

Pad layout

11.00
MIN.

(0.43)

MIN.

(4)

b1, b3

(c)

(b, b2)

Section B - B and C - C

Scale: None

9.65

(0.38)

3.81

(0.15)

c1

MIN.

MIN.

Base
Metal

(4)

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5 M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

(4)

Dimension b1 and c1 apply to base metal only

(5)

Datum A and B to be determined at datum plane H

(6)

Controlling dimension: inch

(7)

Outline conforms to JEDEC outline TO-263AB

Document Number: 95046 For technical questions concerning discrete products, contact: [e-mail]

www.vishay.com

Revision: 31-Mar-09 For technical questions concerning module products, contact: [e-mail]

1

D2PAK

Part Marking Information

Vishay High Power Products

Assembly
lot code

xxxxxxS

V PYWWXA

8024

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 0 = 2000
Week 02
Line X
Child lot A

Example: This is a xxxxxxS with
assembly lot code 8024,
assembled on WW 02, 2000

Document Number: 95054 For technical questions concerning discrete products, contact: [e-mail]
Revision: 17-Oct-08 For technical questions concerning module products, contact: [e-mail]

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1

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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Revision: 18-Jul-08 1