VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 10 A
Base
common
cathode
+
2
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
APPLICATIONS
• Output rectification and freewheeling in inverters,
D2PAK (SMD-220)
1
--
Anode
3
Anode
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
PRODUCT SUMMARY
V
RRM
V
at 10 A < 1.2 V
F
t
rr
200 V to 600 V
50 ns
DESCRIPTION
The VS-10ETF..SPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
I
F(AV)
I
FSM
t
rr
V
T
RRM
F
J
Sinusoidal waveform 10
1 A, 100 A/μs 50 ns
10 A, TJ = 25 °C 1.2 V
Range - 40 to 150 °C
200 to 600 V
150
A
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
VS-10ETF02SPbF 200 300
VS-10ETF06SPbF 600 700
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
2VS-10ETF04SPbF 400 500
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Maximum I
Maximum I
Document Number: 94091 For technical questions, contact: diodestech@vishay.com
Revision: 26-Apr-10 1
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1125 A2√s
F(AV)
I
FSM
TC = 128 °C, 180° conduction half sine wave 10
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 160
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 160
applied 150
RRM
applied 112.5
RRM
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A
2
A
s
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
T
, T
J
R
thJC
R
thJA
S
10 A, TJ = 25 °C 1.2 V
12.7 mΩ
1.25 V
0.1
I
FM
t
rr
dir
dt
- 40 to 150 °C
rr
Stg
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 2.0
J
IF at 10 Apk
25 A/μs
25 °C
V
= Rated V
R
145 ns
2.75 A
0.32 μC
RRM
DC operation 1.5
(1)
40
240 °C
2g
0.07 oz.
10ETF02S
2
PAK (SMD-220)
10ETF04S
10ETF06S
mA
I
RM(REC)
°C/W
t
Q
rr
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94091
2 Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
150
145
140
135
130
Temperature (°C)
125
Maximum Allowable Case
120
0
Fig. 1 - Current Rating Characteristics
150
145
140
135
Fast Soft Recovery
Rectifier Diode, 10 A
10ETF..S Series
(DC) = 1.5 °C/W
R
thJC
Ø
Conduction angle
120°
60°
30°
28
4
Average Forward Current (A)
90°
6
10ETF..S Series
(DC) = 1.5 °C/W
R
thJC
Conduction period
180°
10 12
Ø
Vishay High Power Products
20
10ETF..S Series
= 150 °C
T
J
16
12
RMS limit
8
30°
Power Loss (W)
4
Maximum Average Forward
0
0
48
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
160
140
120
100
At any rated load condition and with
rated V
applied following surge.
RRM
90°
120°
60°
Conduction period
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
12
180°
DC
Ø
16
130
Temperature (°C)
125
Maximum Allowable Case
120
010
16
14
12
10
8
6
Power Loss (W)
4
Maximum Average Forward
2
0
0
Fig. 3 - Forward Power Loss Characteristics
60°
120°
30°
212
48 14
90°
6
DC
180°
16
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
120°
90°
RMS limit
2
60°
30°
Conduction angle
10ETF..S Series
= 150 °C
T
J
46
180°
Ø
8
10
Average Forward Current (A)
80
Forward Current (A)
Peak Half Sine Wave
60
10ETF..S Series
40
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
180
Maximum non-repetitive surge current
160
140
120
100
80
Forward Current (A)
Peak Half Sine Wave
60
40
0.01 0.1 1
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated V
10ETF..S Series
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
reapplied
RRM
Document Number: 94091 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 26-Apr-10 3